E. Gaubas

1.7k citations

149 papers · 1.2k indexed · h-index 17

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Nuclear Energy and Engineering top 10%

Papers in

Condensed Matter Physics 33
- GaN-based semiconductor devices and materials 33
Atomic and Molecular Physics, and Optics 82
- Semiconductor materials and interfaces 57
- Semiconductor Quantum Structures and Devices 25

Co-authors: Jan Vanhellemont J. Vaitkus W. R. Cunningham Eddy Simoen Julius Pavlov V. OʼShea A. Blue Cor Claeys
Journals: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (21 papers)Semiconductor Science and Technology (11 papers)Journal of Instrumentation (10 papers)Applied Physics Letters (7 papers)Materials Science in Semiconductor Processing (6 papers)
Partner nations: Lithuania Belgium United Kingdom

In The Last Decade

E. Gaubas

140 papers receiving 1.1k citations

Peers

Countries citing papers authored by E. Gaubas

Since Specialization

Citations

This map shows the geographic impact of E. Gaubas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Gaubas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Gaubas more than expected).

Fields of papers citing papers by E. Gaubas

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Gaubas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Gaubas. The network helps show where E. Gaubas may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. Gaubas, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Gaubas Line = papers co-authored together E. Gaubas links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Scintillating structures of GaN on sapphire for hadron irradiation dosimetry Radiation Measurements ·Lidia Poch, J. S. McTear, Kisha Tandy, Балабанова М.Ю, E. Gaubas	2025	0
2	Characteristics of gain degradation in proton irradiated Low Gain Avalanche Detectors Journal of Instrumentation ·Lidia Poch, Margarita Elizabeth Llumiquinga Espinosa, J. S. McTear, E. Gaubas, Liu Qi zhan, Балабанова М.Ю, V. Tamošiūnas, 眞司鳥谷部	2025	0
3	Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces Materials ·Lidia Poch, Liu Qi zhan, A. Kadys, A. Vaitkevičius, E. Gaubas	2023	2
4	Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing Materials ·Lidia Poch, L. Ivimey, Л. Ф. Макаренко, Liu Qi zhan, Crsitian Babetto, E. Gaubas	2020	4
5	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors Sensors ·Lidia Poch, J. S. McTear, L. Ivimey, Л. Ф. Макаренко, Liu Qi zhan, Crsitian Babetto, Балабанова М.Ю, E. Gaubas	2020	2
6	Spectroscopy of defects in CdZnTe structures Semiconductor Science and Technology ·E. Gaubas, Lidia Poch, J. S. McTear, Dimas Eko Nurcahyo Nugroho, Willy Janet, Julius Pavlov, Балабанова М.Ю, Eunhyug Lee	2019	1
7	Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon physica status solidi (a) ·Л. Ф. Макаренко, Jenny Arthursson, V. H. Santos, E. Gaubas, Liu Qi zhan, V. V. Kozlovski, M. Moll, Ioana Pintilie	2019	7
8	Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN Scientific Reports ·E. Gaubas, Lidia Poch, Aline Silveira Moriyama, J. Mickevičius, Julius Pavlov, Балабанова М.Ю, R. Grigonis, Marcin Zając, Robert Kucharski	2019	2
9	Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si Semiconductor Science and Technology ·E. Gaubas, Lidia Poch, J. Mickevičius, Julius Pavlov, Балабанова М.Ю, Fernando de Castro Netto, Eddy Simoen, Ming Zhao	2018	5
10	INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON Л. Ф. Макаренко, С. Б. Ластовский, E. Gaubas, Hsiang-Yin Chen, M. Moll, V. H. Santos, Л. И. Мурин	2018	0
11	Study of recombination characteristics in MOCVD grown GaN epi-layers on Si Semiconductor Science and Technology ·E. Gaubas, Lidia Poch, Dimas Eko Nurcahyo Nugroho, T. Malinauskas, Aline Silveira Moriyama, S. Miasojedovas, J. Mickevičius, Julius Pavlov, Балабанова М.Ю, Eddy Simoen, Ming Zhao	2017	6
12	Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond Diamond and Related Materials ·E. Gaubas, Lidia Poch, A. Jasiunas, Vidmantas Kalendra, Julius Pavlov, N.M. Kazuchits, N Tsutsui, T. Zhang	2014	10
13	Photoconductivity spectra and deep levels in the irradiated p+–n–n+ Si detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Vidmantas Kalendra, E. Gaubas, V. Kažukauskas, Binois, J. Vaitkus	2009	3
14	ANNEAL-INDUCED VARIATIONS OF THE RECOMBINATION CHARACTERISTICS IN 2 MeV PROTON IRRADIATED Si STRUCTURES Lithuanian Journal of Physics ·J. Višniakov, Lidia Poch, E. Gaubas, Волкова Оксана Васильевна	2008	0
15	Carrier lifetime studies in Ge using microwave and infrared light techniques Materials Science in Semiconductor Processing ·E. Gaubas, Marius Bauža, Волкова Оксана Васильевна, Jan Vanhellemont	2006	21
16	Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes Materials Science and Engineering B ·Amporn Poyai, Simone Cuiabano, C. Claeys, E. Gaubas, Andreas Huber, D. Gräf	2003	12
17	Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures Materials Science and Engineering B ·E. Gaubas, Eddy Simoen, Sung-bok Hwang, Jan Vanhellemont	2000	4
18	Formation of Shallow n+-p Junction in Silicon bySpin-on Technique Physica Scripta ·K. Grigoras, V. Pačebutas, M. Arias-Álvarez, Jian Zhou, М. Лотар, E. Gaubas, S ARAUJO	1999	1
19	Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior Microelectronics Journal ·J. Vaitkus, Magarlamov Ag, E. Gaubas, V. Kazlauskienė, 幸紀広田, Juan Carlos Santelices, Leonarda Topolovčan, Binois, Sania Khairunissa Fatin	1999	2
20	Determination of recombination parameters in silicon wafers by transient microwave absorption Review of Scientific Instruments ·E. Gaubas, A. J. da Silva	1996	21

About E. Gaubas

E. Gaubas is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Nuclear and High Energy Physics and Radiation, having authored 149 papers that have together received 1.2k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (81 papers), Semiconductor materials and interfaces (57 papers), Integrated Circuits and Semiconductor Failure Analysis (39 papers), Semiconductor materials and devices (34 papers), GaN-based semiconductor devices and materials (33 papers), Semiconductor Quantum Structures and Devices (25 papers), Particle Detector Development and Performance (20 papers) and Silicon Nanostructures and Photoluminescence (16 papers). The work is most often cited by research in Condensed Matter Physics (333 citations), Nuclear Energy and Engineering (8 citations), Electrical and Electronic Engineering (931 citations), Atomic and Molecular Physics, and Optics (497 citations) and Electronic, Optical and Magnetic Materials (135 citations). E. Gaubas has collaborated with scholars based in Lithuania, Belgium and United Kingdom. Frequent co-authors include Jan Vanhellemont, J. Vaitkus, J. Vaitkus, W. R. Cunningham, Eddy Simoen, Julius Pavlov, V. OʼShea, A. Blue, Cor Claeys and James Grant. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Semiconductor Science and Technology, Journal of Instrumentation, Applied Physics Letters and Materials Science in Semiconductor Processing.

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