Steven C. Moss

4.9k total citations
176 papers, 3.8k citations indexed

About

Steven C. Moss is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Steven C. Moss has authored 176 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Electrical and Electronic Engineering, 67 papers in Atomic and Molecular Physics, and Optics and 47 papers in Materials Chemistry. Recurrent topics in Steven C. Moss's work include Semiconductor Quantum Structures and Devices (40 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers) and Semiconductor materials and devices (24 papers). Steven C. Moss is often cited by papers focused on Semiconductor Quantum Structures and Devices (40 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers) and Semiconductor materials and devices (24 papers). Steven C. Moss collaborates with scholars based in United States, South Korea and France. Steven C. Moss's co-authors include Stanford R. Ovshinsky, J. F. Graczyk, J. P. deNeufville, J. P. de Neufville, Arthur L. Smirl, J. Feinleib, S. D. LaLumondiere, Thomas F. Boggess, Ian W. Boyd and J. L. Robertson and has published in prestigious journals such as Science, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

Steven C. Moss

164 papers receiving 3.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Steven C. Moss 2.1k 1.9k 1.1k 560 536 176 3.8k
H. J. Levinstein 3.0k 1.4× 2.1k 1.1× 2.7k 2.5× 711 1.3× 331 0.6× 126 5.2k
L. I. Maissel 1.9k 0.9× 1.2k 0.6× 597 0.6× 481 0.9× 65 0.1× 31 3.1k
J. E. Geusic 2.3k 1.1× 1.7k 0.9× 2.2k 2.0× 384 0.7× 534 1.0× 64 3.8k
M. Rothschild 1.3k 0.6× 943 0.5× 680 0.6× 1.1k 2.0× 158 0.3× 172 2.8k
G. Ottaviani 4.0k 1.9× 1.5k 0.8× 2.6k 2.4× 645 1.2× 75 0.1× 122 5.5k
B.S. Meyerson 6.7k 3.2× 2.5k 1.3× 3.5k 3.2× 994 1.8× 76 0.1× 179 7.9k
Nguyên Tiên Són 5.1k 2.4× 2.9k 1.6× 1.7k 1.5× 339 0.6× 421 0.8× 222 6.4k
Fabrizio Cleri 595 0.3× 2.6k 1.4× 1.1k 1.1× 634 1.1× 154 0.3× 124 3.9k
P. Pavone 1.3k 0.6× 3.1k 1.7× 1.6k 1.5× 372 0.7× 237 0.4× 74 4.6k
M. Seibt 2.5k 1.2× 1.8k 1.0× 1.6k 1.4× 451 0.8× 43 0.1× 203 3.9k

Countries citing papers authored by Steven C. Moss

Since Specialization
Citations

This map shows the geographic impact of Steven C. Moss's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven C. Moss with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven C. Moss more than expected).

Fields of papers citing papers by Steven C. Moss

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven C. Moss. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven C. Moss. The network helps show where Steven C. Moss may publish in the future.

Co-authorship network of co-authors of Steven C. Moss

This figure shows the co-authorship network connecting the top 25 collaborators of Steven C. Moss. A scholar is included among the top collaborators of Steven C. Moss based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steven C. Moss. Steven C. Moss is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sin, Yongkun, et al.. (2016). Reliability, failure modes, and degradation mechanisms in high power single- and multi-mode InGaAs-AlGaAs strained quantum well lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9733. 973304–973304. 14 indexed citations
2.
Sin, Yongkun, Zachary Lingley, Mark W. Peterson, et al.. (2015). Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9358. 93580I–93580I. 1 indexed citations
3.
LaBel, Kenneth A., J.L. Wert, C.C. Foster, et al.. (2015). Evaluation and Application of U.S. Medical Proton Facilities for Single Event Effects Test. IEEE Transactions on Nuclear Science. 62(6). 2490–2497. 5 indexed citations
4.
Cardoza, David, Stephen LaLumondiere, Dale Brewe, et al.. (2014). Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions. IEEE Transactions on Nuclear Science. 61(6). 3154–3162. 15 indexed citations
5.
Kuech, T. F., L. J. Mawst, S. D. LaLumondiere, et al.. (2014). Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 104(5). 14 indexed citations
6.
Kirch, Jeremy, L. J. Mawst, T. F. Kuech, et al.. (2011). Characteristics of step-graded In x Ga 1−x As and InGaP y Sb 1−y metamorphic buffer layers on GaAs substrates. 1–4.
7.
Witczak, S.C., R.C. Lacoe, J.V. Osborn, John M. Hutson, & Steven C. Moss. (2005). Dose-rate sensitivity of modern nMOSFETs. IEEE Transactions on Nuclear Science. 52(6). 2602–2608. 43 indexed citations
8.
Islam, Z., X. Liu, S. K. Sinha, et al.. (2004). Four-Unit-Cell Superstructure in the Optimally DopedYBa2Cu3O6.92Superconductor. Physical Review Letters. 93(15). 157008–157008. 26 indexed citations
9.
LaLumondiere, S. D., Steven C. Moss, & J. C. Camparo. (2003). A "space experiment" examining the response of a geosynchronous quartz crystal oscillator to various levels of solar activity. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 50(3). 210–213. 5 indexed citations
10.
Higley, Kathryn A., et al.. (2003). AN EXPERIMENTAL DETERMINATION OF FIDLER SCANNING EFFICIENCY AT SPECIFIC SPEEDS. Health Physics. 84(2). 197–202. 1 indexed citations
11.
Camparo, J. C., et al.. (2002). Response of a Geosynchronous Spacecraft's Crystal Oscillator to Solar Flares: Results of a "Space Experiment". Defense Technical Information Center (DTIC). 32. 193–200. 2 indexed citations
12.
Camparo, J. C. & Steven C. Moss. (2002). Solar Flares and Precise Satellite Timekeeping. Defense Technical Information Center (DTIC). 2 indexed citations
13.
LaLumondiere, S. D., et al.. (2002). Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators. IEEE Transactions on Nuclear Science. 49(6). 3121–3128. 23 indexed citations
14.
Moss, Steven C., D. B. Poker, D. Ila, & J. F. Wendelken. (2001). Growth, evolution and properties of surfaces, thin films and self-organized structures : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 1 indexed citations
15.
Forster, Kenneth, et al.. (1987). X-ray study of planar defects in highly oriented pyrolytic graphite (HOPG). Acta Crystallographica Section A Foundations of Crystallography. 43(3). 418–425. 16 indexed citations
16.
Smirl, Arthur L., Thomas F. Boggess, Steven C. Moss, J. R. Lindle, & Frederic A. Hopf. (1980). Picosecond degenerate resonant four-wave mixing (A). Journal of the Optical Society of America A. 70. 601. 4 indexed citations
17.
Moss, Steven C., R. Alben, David Adler, & J. P. de Neufville. (1973). Comment on the heat of crystallization of amorphous germanium. Journal of Non-Crystalline Solids. 13(1). 185–188. 14 indexed citations
18.
Moss, Steven C., et al.. (1972). Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes. Solid-State Electronics. 15(12). 1331–1337. 107 indexed citations
19.
Feinleib, J., et al.. (1972). Reversible optical effects in amorphous semiconductors. Journal of Non-Crystalline Solids. 8-10. 909–916. 23 indexed citations
20.
Jones, Keith, Steven C. Moss, & Robert M. Rose. (1969). The effect of small oxygen additions on the elastic constants and low temperature ultrasonic attenuation of Nb single crystals. Acta Metallurgica. 17(4). 365–372. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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