Xueli Ma

703 total citations
65 papers, 442 citations indexed

About

Xueli Ma is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Xueli Ma has authored 65 papers receiving a total of 442 indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Xueli Ma's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Ferroelectric and Negative Capacitance Devices (19 papers). Xueli Ma is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Ferroelectric and Negative Capacitance Devices (19 papers). Xueli Ma collaborates with scholars based in China, Belgium and Sweden. Xueli Ma's co-authors include Wenwu Wang, Kai Han, Xiaolei Wang, Hong Yang, Jinjuan Xiang, Chao Zhao, Yongliang Li, Jing Zhang, Tianchun Ye and Wenwu Wang and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Journal of Physics D Applied Physics.

In The Last Decade

Xueli Ma

63 papers receiving 413 citations

Peers

Xueli Ma

EEE

AMPO

EOMM

Christian Dreyer Germany

Muhammad Bashir Pakistan

Shuang Wu China

Hieu Van Le Vietnam

Yong‐Suk Yang South Korea

H. Beyer Germany

Roana de Oliveira Hansen Denmark

S. Sainov Bulgaria

Hiroshi Ohata Japan

Zhiyuan Chen China

Christian Dreyer Germany

Xueli Ma

125 ×0.4

EEE

38 ×0.3

36 ×0.6

37 ×0.6

AMPO

18 ×1.0

EOMM

Citations per year, relative to Xueli Ma Xueli Ma (= 1×) peers Christian Dreyer

Countries citing papers authored by Xueli Ma

Since Specialization

Citations

This map shows the geographic impact of Xueli Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xueli Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xueli Ma more than expected).

Fields of papers citing papers by Xueli Ma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xueli Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xueli Ma. The network helps show where Xueli Ma may publish in the future.

Co-authorship network of co-authors of Xueli Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Xueli Ma. A scholar is included among the top collaborators of Xueli Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xueli Ma. Xueli Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wang, Ziheng, Kai Jiang, Yuan Li, et al.. (2025). In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility. IEEE Electron Device Letters. 46(3). 412–415. 1 indexed citations

Tai, Lu, Yuting Chen, Xueli Ma, et al.. (2025). Linear Tuning of Positive Threshold Voltage in IGZO Thin-Film Transistors via Gate Dielectric Stack Engineering. IEEE Electron Device Letters. 46(5). 781–784. 1 indexed citations

Ma, Xueli, et al.. (2024). Pomegranate peel extract incorporated soy protein isolate/Artemisia sphaerocephala Krasch. gum composite films for fresh-cut apples preservation. International Journal of Biological Macromolecules. 280(Pt 1). 135649–135649. 14 indexed citations

Ma, Xueli, Jinjuan Xiang, Gaobo Xu, et al.. (2024). Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM. IEEE Electron Device Letters. 46(2). 290–293. 1 indexed citations

Gao, Le, et al.. (2023). Preparation and Application of pH-Sensitive Film Containing Anthocyanins Extracted from Lycium ruthenicum Murr.. Materials. 16(10). 3828–3828. 15 indexed citations

Li, Chun, et al.. (2022). Optimization of SiGe interface properties with ozone oxidation and a stacked HfO₂/Al₂O₃ dielectric for a SiGe channel FinFET transistor. Semiconductor Science and Technology. 37(12). 125008–125008. 7 indexed citations

Ma, Xueli, Hanxiang Wang, Yanrong Wang, et al.. (2021). Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods. Nanomaterials. 11(4). 955–955. 8 indexed citations

Li, Yongliang, Zhaoyang Zhong, Qingzhu Zhang, et al.. (2020). Key Process Technologies for Stacked Double Si _0.7 Ge _0.3 Channel Nanowires Fabrication. ECS Journal of Solid State Science and Technology. 9(6). 64009–64009. 7 indexed citations

Ji, Zhigang, Hong Yang, Hao Xu, et al.. (2020). An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method. IEEE Transactions on Device and Materials Reliability. 20(1). 92–96. 3 indexed citations

10.

Liu, Qianqian, Hong Yang, Zhigang Ji, et al.. (2020). Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs. IEEE Transactions on Device and Materials Reliability. 20(3). 498–505. 3 indexed citations

11.

Ma, Xueli, Jinjuan Xiang, Hao Xu, et al.. (2020). Understanding the mechanisms impacting the interface states of ozone-treated high-k/SiGe interfaces. Semiconductor Science and Technology. 35(5). 55018–55018. 3 indexed citations

12.

Li, Yongliang, Junjie Li, Guilei Wang, et al.. (2020). Fabrication technique of the Si _0.5 Ge _0.5 Fin for the high mobility channel FinFET device. Semiconductor Science and Technology. 35(4). 45015–45015. 9 indexed citations

13.

Liu, Haoyan, Yongliang Li, Guilei Wang, et al.. (2020). Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs. Materials Science in Semiconductor Processing. 121. 105397–105397. 7 indexed citations

14.

Li, Yongliang, Guilei Wang, Haoyan Liu, et al.. (2020). Investigation on thermal stability of Si _0.7 Ge _0.3 /Si stacked multilayer for gate-all-around MOSFETS. Semiconductor Science and Technology. 35(11). 115008–115008. 8 indexed citations

15.

Yang, Shenglai, et al.. (2020). Adaptability Evaluation of Nitrogen Foam Flooding After Water-Flooding in Low-Permeability Light Oil Reservoirs. Xinjiang shiyou dizhi. 41(6). 729. 3 indexed citations

16.

Zhang, Qingzhu, Hong Yang, Zhigang Ji, et al.. (2020). Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs. IEEE Electron Device Letters. 41(7). 965–968. 5 indexed citations

17.

Ma, Xueli, Jinjuan Xiang, Xiaolei Wang, et al.. (2019). Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation. ECS Journal of Solid State Science and Technology. 8(6). N100–N105. 4 indexed citations

18.

Han, Kai, Xiaolei Wang, Jinjuan Xiang, et al.. (2019). Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs. Semiconductor Science and Technology. 34(7). 75009–75009. 3 indexed citations

19.

Li, Yongliang, Haoyan Liu, Guilei Wang, et al.. (2019). Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. Journal of Materials Science Materials in Electronics. 31(8). 5854–5860. 1 indexed citations

20.

Li, Yongliang, Guilei Wang, Anyan Du, et al.. (2019). A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown. Journal of Materials Science Materials in Electronics. 30(15). 14130–14135. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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