J.D. Plummer

13.5k total citations · 3 hit papers
298 papers, 10.0k citations indexed

About

J.D. Plummer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.D. Plummer has authored 298 papers receiving a total of 10.0k indexed citations (citations by other indexed papers that have themselves been cited), including 279 papers in Electrical and Electronic Engineering, 87 papers in Atomic and Molecular Physics, and Optics and 38 papers in Materials Chemistry. Recurrent topics in J.D. Plummer's work include Semiconductor materials and devices (161 papers), Advancements in Semiconductor Devices and Circuit Design (127 papers) and Silicon and Solar Cell Technologies (107 papers). J.D. Plummer is often cited by papers focused on Semiconductor materials and devices (161 papers), Advancements in Semiconductor Devices and Circuit Design (127 papers) and Silicon and Solar Cell Technologies (107 papers). J.D. Plummer collaborates with scholars based in United States, Belgium and Hong Kong. J.D. Plummer's co-authors include Peter B. Griffin, Shiyu Sun, P. Fahey, Michael Deal, C. Auth, G. Kalpana, Hisham Z. Massoud, E. A. Irene, Michael L. Reed and Ant Ural and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Physical Review Letters and Reviews of Modern Physics.

In The Last Decade

J.D. Plummer

280 papers receiving 9.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Point defects and dopant diffusion in silicon

1989 1.1k citations Peter B. Griffin, J.D. Plummer et al. profile →
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

1980 525 citations J.D. Plummer et al. IEEE Transactions on Electron Devices profile →
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

1997 431 citations J.D. Plummer et al. IEEE Electron Device Letters profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
J.D. Plummer	9.1k	3.0k	2.0k	1.5k	653	298	10.0k
Eddy Simoen	9.1k 1.0×	2.2k 0.7×	1.1k 0.6×	1.1k 0.7×	314 0.5×	971	9.6k
R. G. Elliman	4.6k 0.5×	1.1k 0.4×	3.1k 1.5×	1.1k 0.7×	1.8k 2.7×	340	6.2k
D. K. Biegelsen	4.9k 0.5×	2.3k 0.8×	3.4k 1.7×	1.0k 0.7×	390 0.6×	128	6.4k
L. K. Ang	4.6k 0.5×	2.7k 0.9×	3.1k 1.5×	1.5k 1.0×	186 0.3×	241	7.8k
Simon M. Sze	10.3k 1.1×	3.6k 1.2×	3.3k 1.6×	1.1k 0.7×	145 0.2×	278	11.6k
B. G. Streetman	4.9k 0.5×	3.8k 1.3×	1.3k 0.7×	484 0.3×	425 0.7×	269	6.0k
J.-P. Colinge	10.3k 1.1×	4.2k 1.4×	4.6k 2.3×	2.4k 1.6×	143 0.2×	31	12.5k
Cindy Colinge	9.8k 1.1×	4.2k 1.4×	4.6k 2.3×	2.3k 1.5×	138 0.2×	36	12.1k
M. Seibt	2.5k 0.3×	1.6k 0.5×	1.8k 0.9×	451 0.3×	304 0.5×	203	3.9k
T. E. Schlesinger	3.1k 0.3×	1.8k 0.6×	1.3k 0.6×	903 0.6×	91 0.1×	256	3.9k

Countries citing papers authored by J.D. Plummer

Since Specialization

Citations

This map shows the geographic impact of J.D. Plummer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.D. Plummer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.D. Plummer more than expected).

Fields of papers citing papers by J.D. Plummer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.D. Plummer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.D. Plummer. The network helps show where J.D. Plummer may publish in the future.

Co-authorship network of co-authors of J.D. Plummer

This figure shows the co-authorship network connecting the top 25 collaborators of J.D. Plummer. A scholar is included among the top collaborators of J.D. Plummer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.D. Plummer. J.D. Plummer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zulauf, Grayson, et al.. (2021). Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs. IEEE Transactions on Electron Devices. 68(4). 1819–1826. 20 indexed citations

Zulauf, Grayson, et al.. (2019). Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(2). 865–878. 32 indexed citations

Zulauf, Grayson, et al.. (2018). Active Power Device Selection in High- and Very-High-Frequency Power Converters. IEEE Transactions on Power Electronics. 34(7). 6818–6833. 80 indexed citations

Zulauf, Grayson, et al.. (2018). <inline-formula> <tex-math notation="LaTeX">${C}_{\textsf{OSS}}$ </tex-math> </inline-formula> Measurements for Superjunction MOSFETs: Limitations and Opportunities. IEEE Transactions on Electron Devices. 66(1). 578–584. 30 indexed citations

Yuan, Ze, Chien‐Yu Chen, Aneesh Nainani, et al.. (2013). Optimal device architecture and hetero-integration scheme for III–V CMOS. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3 indexed citations

Zhang, Zhiping, Chien‐Yu Chen, Peter B. Griffin, et al.. (2013). Low-Temperature Monolithic Three-Layer 3-D Process for FPGA. IEEE Electron Device Letters. 34(8). 1044–1046. 11 indexed citations

Griffin, Peter B., et al.. (2006). Novel Methods For Ultrashallow Low Resistance Junction Formation. ECS Transactions. 3(2). 45–56. 1 indexed citations

Plummer, J.D., Michael Deal, & Peter B. Griffin. (2000). Silicon VLSI Technology: Fundamentals, Practice and Modeling. Medical Entomology and Zoology. 1086. 41–52. 438 indexed citations

Cho, Hyun‐Jin & J.D. Plummer. (1999). High performance fully and partially depleted poly-Si surrounding gate transistors. 31–32. 1 indexed citations

10.

Plummer, J.D. & Peter B. Griffin. (1995). Challenges for predictive process simulation in sub 0.1 μm silicon devices. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 160–166. 6 indexed citations

11.

Luning, S., P. M. Rousseau, Peter B. Griffin, J.D. Plummer, & P.G. Carey. (1992). Kinetics of high concentration arsenic deactivation at moderate to low temperatures. 6–9. 5 indexed citations

12.

Rousseau, P. M., Peter B. Griffin, J.D. Plummer, & Paula J. Carey. (1992). Activation and deactivation of high concentration arsenic with some evidence of precipitation. University of North Texas Digital Library (University of North Texas). 1 indexed citations

13.

Allen, Emily, Michael Deal, & J.D. Plummer. (1990). The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide. Journal of Applied Physics. 67(7). 3311–3314. 2 indexed citations

14.

Plummer, J.D., et al.. (1988). Range distribution of implanted cesium ions in silicon dioxide films. Journal of Applied Physics. 63(12). 5887–5889. 8 indexed citations

15.

Watt, J.T. & J.D. Plummer. (1987). Universal Mobility-Field Curves for Electrons and Holes in MOS Inversion Layers. Symposium on VLSI Technology. 81–82. 50 indexed citations

16.

Griffin, Peter B. & J.D. Plummer. (1986). The Influence of Point Defects on Two Dimensional Diffusion Kinetics. MRS Proceedings. 71. 3 indexed citations

17.

Nguyen, T.N. & J.D. Plummer. (1982). IIA-6 a comparison of buried channel and surface channel MOSFETs for VLSI. IEEE Transactions on Electron Devices. 29(10). 1663–1664. 2 indexed citations

18.

Meindl, J.D., et al.. (1981). A fast turn-around facility for Very Large Scale Integration (VLSI). 1 indexed citations

19.

Nguyen, T.N. & J.D. Plummer. (1981). Physical mechanisms responsible for short channel effects in MOS devices. 596–599. 26 indexed citations

20.

Meindl, J.D., R.W. Dutton, J. F. Gibbons, J.D. Plummer, & William A. Tiller. (1978). Computer-Aided Engineering of Semiconductor Integrated Circuits.. Defense Technical Information Center (DTIC). 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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