Albert Minj

586 citations

48 papers · 476 indexed · h-index 12

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 29
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 9
Materials Chemistry
- 2D Materials and Applications 6
Electrical and Electronic Engineering
- Semiconductor materials and devices 14
Mechanics of Materials top 10%
- Metal and Thin Film Mechanics 12
Biomedical Engineering
- Nanowire Synthesis and Applications 11
Atomic and Molecular Physics, and Optics
- Force Microscopy Techniques and Applications 8
- Semiconductor Quantum Structures and Devices 7

Co-authors: Daniela Cavalcoli A. Cavallini A. Cros B. Daudin Thomas Auzelle J. Colchero N. Garro P. Ruterana
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters (5 papers)Nanotechnology (4 papers)Journal of Applied Physics (3 papers)
Partner nations: Belgium France Italy

In The Last Decade

Albert Minj

45 papers receiving 455 citations

Peers

Countries citing papers authored by Albert Minj

Since Specialization

Citations

This map shows the geographic impact of Albert Minj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Albert Minj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Albert Minj more than expected).

Fields of papers citing papers by Albert Minj

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Albert Minj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Albert Minj. The network helps show where Albert Minj may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Albert Minj, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Albert Minj Line = papers co-authored together Albert Minj links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence Materials Science in Semiconductor Processing ·Thomas Nuytten,Albert Minj,Stefanie Sergeant,Quentin Smets,Steven Brems,Pawan Kumar,Souvik Ghosh,T. Schram,幸雄江原,誠治大野,Dennis H. van Dorp,Benjamin Groven,J E Naschitz	2025	0
2	Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements Nanotechnology ·B. Devreese,Bradley B. Rounds,Albert Minj,金子祐一郎,E. D. Courant,W.W. Xu,Zihan Lu,Stefanie Sergeant,Thomas Hantschel	2024	3
3	Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors physica status solidi (a) ·Sourish Banerjee,Uthayasankaran Peralagu,A. Alian,Ming Zhao,H. Hahn,Albert Minj,Фролов Валерий Александрович,Anurag Vohra,Bertrand Parvais,R. Langer,Nadine Collaert	2024	1
4	Direct Assessment of Defective Regions in Monolayer MoS₂ Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements ACS Nano ·Albert Minj,Lívia Pirtouscheg,幸雄江原,Ankit Nalin Mehta,E. D. Courant,Thomas Hantschel,Inge Asselberghs,Ludovic Goux,Gouri Sankar Kar,Marc Heyns,Dennis Lin	2024	2
5	Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates Solid-State Electronics ·M. D. Sindhu,Albert Minj,Henry Medina,Adalberto,Benjamin Groven,Dennis Lin,L. M. C. Pereira,J E Naschitz,Thomas Hantschel,V. V. Afanas’ev	2023	1
6	Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS₂ via Combined C‐AFM and ToF‐SIMS Characterization Advanced Materials Interfaces ·Valentina Spampinato,Yuanyuan Shi,E. D. Courant,Albert Minj,Benjamin Groven,Thomas Hantschel,Paul van der Heide,Alexis Franquet	2023	2
7	Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing Scientific Reports ·Khalid El Ouafa,Matteo Borga,Karen Geens,Feitoza João Vitor Fonseca,Alberto Jovellar,Sourish Banerjee,Anurag Vohra,Wei Mi,Albert Minj,H. Hahn,В.Н. Сальков,Dirk Fahle,Benoit Bakeroot,Stefaan Decoutere	2023	7
8	Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques Physical Review Applied ·Albert Minj,Karen Geens,Hu Liang,Wei Mi,Rastislav Ru Inský,Benoit Bakeroot,Kristof Paredis,Ming Zhao,Thomas Hantschel,Stefaan Decoutere	2023	0
9	Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure Applied Physics Letters ·P.H. Plieshkov,Yu Chen,Albert Minj,F. Sánchez,G. Herranz,Laurence Méchin,Bruno Guillet	2022	2
10	Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells Applied Physics Letters ·Albert Minj,Ming Zhao,Benoit Bakeroot,Kristof Paredis	2021	2
11	Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics ACS Nano ·Yuanyuan Shi,Benjamin Groven,E. D. Courant,Xiangyu Wu,Ankit Nalin Mehta,Albert Minj,Stefanie Sergeant,Wei Mi,Inge Asselberghs,Dennis Lin,Steven Brems,Cedric Huyghebaert,P. Morin,Iuliana Radu,Matty Caymax	2021	38
12	Photoinduced Persistent Electron Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells Physical Review Letters ·Wanessa Barros Franklin,P.H. Plieshkov,Blai Casals,Bruno Guillet,Albert Minj,Jaume Gàzquez,Laurence Méchin,G. Herranz	2020	10
13	Characterization of defect states in Mg-doped GaN-on-Si p ⁺ n diodes using deep-level transient Fourier spectroscopy Semiconductor Science and Technology ·P.H. Plieshkov,Albert Minj,Laurence Méchin,Hongwei Liang,Karen Geens,Ming Zhao,Eddy Simoen,Bruno Guillet	2020	0
14	Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La _0.67 Sr _0.33 MnO ₃ films Journal of Physics D Applied Physics ·Sandeep Kumar Chaluvadi,Fernando Ajejas,P. Orgiani,Um Habiba,Albert Minj,Stéphane Flament,Julio Camarero,Paolo Perna,Laurence Méchin	2020	22
15	Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Applied Surface Science ·Nick Flattery,S. Hasenöhrl,Albert Minj,M. P. Chauvat,P. Rutérana,J. Kuzmı́k	2019	10
16	Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD Journal of Applied Physics ·Nick Flattery,S. Hasenöhrl,Edmund Dobročka,M. P. Chauvat,Albert Minj,Filip Gucmann,Л П Панова,Jaroslav Kováč,S. Kret,P. Ruterana,Martin Kuball,Peter Šiffalovič,J. Kuzmı́k	2019	12
17	Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET IEEE Conference Proceedings ·Y. Higashi,Luca Piazza,Masato Suzuki,D. Linten,Jan Van Houdt,N. Ronchi,B. Kaczer,Kaustuv Banerjee,S. R. C. McMitchell,B. J. O’Sullivan,Sergiu Clima,Albert Minj,Umberto Celano	2019	12
18	The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template Journal of Microscopy ·岩破将博,Albert Minj,M. P. Chauvat,Piero Gamarra,C. Lacam,Marisela Morales,P. Ruterana	2017	5
19	Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy Nanotechnology ·Albert Minj,A. Cros,Thomas Auzelle,Julien Pernot,B. Daudin	2016	21
20	Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures Nanotechnology ·Albert Minj,Daniela Cavalcoli,A. Cavallini	2012	9

About Albert Minj

Albert Minj is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Electrical and Electronic Engineering, having authored 48 papers that have together received 476 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (14 papers), Metal and Thin Film Mechanics (12 papers), Nanowire Synthesis and Applications (11 papers), Ga2O3 and related materials (9 papers), Force Microscopy Techniques and Applications (8 papers), Semiconductor Quantum Structures and Devices (7 papers) and 2D Materials and Applications (6 papers). The work is most often cited by research in Condensed Matter Physics (261 citations), Electronic, Optical and Magnetic Materials (164 citations), Materials Chemistry (207 citations), Electrical and Electronic Engineering (229 citations) and Mechanics of Materials (90 citations). Albert Minj has collaborated with scholars based in Belgium, France and Italy. Frequent co-authors include Daniela Cavalcoli, A. Cavallini, A. Cros, B. Daudin, Thomas Auzelle, J. Colchero, N. Garro, P. Ruterana, Beatrice Fraboni and M. P. Chauvat. Their work appears in journals such as Applied Physics Letters, Nanotechnology, Journal of Applied Physics, physica status solidi (a) and Applied Surface Science.

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