B. Cretu

803 total citations
56 papers, 508 citations indexed

About

B. Cretu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, B. Cretu has authored 56 papers receiving a total of 508 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in B. Cretu's work include Advancements in Semiconductor Devices and Circuit Design (53 papers), Semiconductor materials and devices (49 papers) and Integrated Circuits and Semiconductor Failure Analysis (28 papers). B. Cretu is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (53 papers), Semiconductor materials and devices (49 papers) and Integrated Circuits and Semiconductor Failure Analysis (28 papers). B. Cretu collaborates with scholars based in France, Belgium and Brazil. B. Cretu's co-authors include Eddy Simoen, R. Carin, Cor Claeys, Jean‐Marc Routoure, A. Veloso, Nadine Collaert, G. Ghibaudo, A. Mercha, João Antônio Martino and Paula Ghedini Der Agopian and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

B. Cretu

52 papers receiving 493 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Cretu France 13 499 74 53 20 7 56 508
N. Garbar Ukraine 13 356 0.7× 60 0.8× 56 1.1× 12 0.6× 3 0.4× 51 365
B. Winstead United States 9 341 0.7× 42 0.6× 86 1.6× 30 1.5× 2 0.3× 24 358
Guan Huei See Singapore 11 341 0.7× 42 0.6× 32 0.6× 19 0.9× 6 0.9× 44 355
Jean-Luc Polleux France 10 276 0.6× 59 0.8× 60 1.1× 65 3.3× 3 0.4× 36 289
Marcin Franczyk Poland 9 289 0.6× 60 0.8× 131 2.5× 17 0.8× 3 0.4× 30 316
G. Höck Germany 12 377 0.8× 71 1.0× 154 2.9× 40 2.0× 3 0.4× 23 400
Durgesh S. Vaidya United States 9 344 0.7× 31 0.4× 53 1.0× 11 0.6× 2 0.3× 22 366
E. Ungersboeck Austria 12 321 0.6× 95 1.3× 84 1.6× 85 4.3× 2 0.3× 27 366
Guangle Zhou United States 8 501 1.0× 178 2.4× 51 1.0× 28 1.4× 11 511

Countries citing papers authored by B. Cretu

Since Specialization
Citations

This map shows the geographic impact of B. Cretu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Cretu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Cretu more than expected).

Fields of papers citing papers by B. Cretu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Cretu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Cretu. The network helps show where B. Cretu may publish in the future.

Co-authorship network of co-authors of B. Cretu

This figure shows the co-authorship network connecting the top 25 collaborators of B. Cretu. A scholar is included among the top collaborators of B. Cretu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Cretu. B. Cretu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cretu, B., et al.. (2025). Novel Y-function methodology parameter estimation from weak to strong inversion operation. Solid-State Electronics. 225. 109071–109071.
2.
Cretu, B., et al.. (2024). Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs. IEEE Transactions on Electron Devices. 71(10). 5860–5866. 1 indexed citations
3.
Cretu, B., et al.. (2023). (Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures. ECS Transactions. 111(1). 197–208. 1 indexed citations
4.
5.
6.
Cretu, B., A. Veloso, & Eddy Simoen. (2023). In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets. Solid-State Electronics. 201. 108591–108591. 4 indexed citations
7.
Veloso, A., Geert Eneman, Eddy Simoen, et al.. (2022). (Invited, Digital Presentation) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling. ECS Meeting Abstracts. MA2022-01(19). 1059–1059. 1 indexed citations
8.
Cretu, B., et al.. (2022). Si GAA NW FETs threshold voltage evaluation. Solid-State Electronics. 194. 108317–108317. 3 indexed citations
9.
Cretu, B., et al.. (2020). Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization. Solid-State Electronics. 171. 107771–107771. 2 indexed citations
10.
11.
Cretu, B., et al.. (2016). Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results. Solid-State Electronics. 128. 109–114. 11 indexed citations
12.
Cretu, B., et al.. (2016). Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology. Solid-State Electronics. 128. 102–108. 18 indexed citations
13.
Cretu, B., et al.. (2014). In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature. Solid-State Electronics. 98. 12–19. 7 indexed citations
14.
Martino, João Antônio, B. Cretu, Jean‐Marc Routoure, et al.. (2013). Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS. ECS Transactions. 52(1). 87–92. 1 indexed citations
15.
Cretu, B., Jean‐Marc Routoure, R. Carin, et al.. (2011). Low frequency noise characterization in n-channel FinFETs. Solid-State Electronics. 70. 20–26. 22 indexed citations
16.
Guo, Wei, B. Cretu, Jean‐Marc Routoure, et al.. (2009). Low-Frequency Noise Behavior in P-channel SOI FinFETs Processed With Different Strain Techniques. AIP conference proceedings. 295–298. 3 indexed citations
17.
Guo, Weiming, B. Cretu, Jean‐Marc Routoure, et al.. (2007). Low-Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High-K Metal Gate Stack. AIP conference proceedings. 922. 29–32. 1 indexed citations
18.
Cretu, B., et al.. (2002). New method for parameter extraction in deep submicrometer MOSFETs. 181–186. 30 indexed citations
19.
Cretu, B., G. Ghibaudo, F. Balestra, et al.. (2002). Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures. Solid-State Electronics. 46(3). 337–342. 1 indexed citations
20.
Γιαννακόπουλος, Κωνσταντίνος, et al.. (2001). Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability. 41(9-10). 1361–1366. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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