C. Claeys

2.4k total citations
164 papers, 1.7k citations indexed

About

C. Claeys is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. Claeys has authored 164 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 158 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in C. Claeys's work include Semiconductor materials and devices (117 papers), Advancements in Semiconductor Devices and Circuit Design (101 papers) and Integrated Circuits and Semiconductor Failure Analysis (69 papers). C. Claeys is often cited by papers focused on Semiconductor materials and devices (117 papers), Advancements in Semiconductor Devices and Circuit Design (101 papers) and Integrated Circuits and Semiconductor Failure Analysis (69 papers). C. Claeys collaborates with scholars based in Belgium, Japan and Brazil. C. Claeys's co-authors include Eddy Simoen, Jan Vanhellemont, A. Mercha, J.M. Rafı́, Geert Eneman, G. F. Cerofolini, E. Simoen, B. Dierickx, E. Augendre and S. Amelinckx and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Claeys

156 papers receiving 1.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
C. Claeys 1.6k 398 258 216 56 164 1.7k
H. R. Vydyanath 864 0.6× 522 1.3× 335 1.3× 80 0.4× 28 0.5× 49 971
K. Elliott 830 0.5× 614 1.5× 230 0.9× 80 0.4× 34 0.6× 54 996
D.K. Schroder 1.7k 1.1× 780 2.0× 481 1.9× 242 1.1× 75 1.3× 62 1.8k
Tomoaki Kawamura 575 0.4× 279 0.7× 179 0.7× 231 1.1× 38 0.7× 83 825
R.E. Thomas 1.3k 0.8× 433 1.1× 262 1.0× 182 0.8× 39 0.7× 38 1.5k
Erik Johnson 1.3k 0.8× 339 0.9× 533 2.1× 213 1.0× 52 0.9× 109 1.5k
A. Raisanen 522 0.3× 451 1.1× 215 0.8× 254 1.2× 53 0.9× 67 864
H. B. Serreze 743 0.5× 398 1.0× 117 0.5× 152 0.7× 37 0.7× 52 863
C. R. Wie 876 0.6× 671 1.7× 368 1.4× 136 0.6× 255 4.6× 83 1.2k
Mathew C. Abraham 450 0.3× 497 1.2× 247 1.0× 179 0.8× 45 0.8× 24 879

Countries citing papers authored by C. Claeys

Since Specialization
Citations

This map shows the geographic impact of C. Claeys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Claeys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Claeys more than expected).

Fields of papers citing papers by C. Claeys

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Claeys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Claeys. The network helps show where C. Claeys may publish in the future.

Co-authorship network of co-authors of C. Claeys

This figure shows the co-authorship network connecting the top 25 collaborators of C. Claeys. A scholar is included among the top collaborators of C. Claeys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Claeys. C. Claeys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Beli, Danilo, et al.. (2024). On the robustness of interface topological modes on rods. 1993–1997. 1 indexed citations
2.
Cretu, B., et al.. (2014). In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature. Solid-State Electronics. 98. 12–19. 7 indexed citations
3.
Simoen, Eddy, A. Veloso, Naoto Horiguchi, Vasile Paraschiv, & C. Claeys. (2013). Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs. 1–5. 4 indexed citations
4.
Aoulaiche, M., K. R. A. Sasaki, Nadine Collaert, et al.. (2012). Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices. 61–64. 5 indexed citations
5.
Simoen, Eddy, Geert Eneman, Mireia Bargalló González, et al.. (2011). High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions. Journal of The Electrochemical Society. 158(5). R27–R27. 17 indexed citations
6.
Eneman, Geert, Rui Yang, Brice De Jaeger, et al.. (2009). P+/n junction leakage in thin selectively grown Ge-in-STI substrates. Thin Solid Films. 518(9). 2489–2492. 11 indexed citations
7.
González, Mireia Bargalló, Eddy Simoen, N. Naka, et al.. (2008). Stress analysis of Si1−xGex embedded source/drain junctions. Materials Science in Semiconductor Processing. 11(5-6). 285–290. 4 indexed citations
8.
Ohyama, H., T. Hirao, Eddy Simoen, et al.. (2005). Effects of high-temperature gamma ray and electron irradiation on npn Si transistors. 114–119.
9.
Huang, Yi, Yue Ma, R. Job, et al.. (2005). The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon. Journal of Applied Physics. 98(3). 8 indexed citations
10.
Rafı́, J.M., A. Mercha, Eddy Simoen, C. Claeys, & Ali Mohammadzadeh. (2003). Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs. 425–432. 6 indexed citations
11.
Mercha, A., Eddy Simoen, & C. Claeys. (2003). Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs. IEEE Transactions on Electron Devices. 50(12). 2520–2527. 10 indexed citations
12.
Poyai, Amporn, et al.. (2003). Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes. Materials Science and Engineering B. 102(1-3). 189–192. 12 indexed citations
13.
Ohyama, H., Eddy Simoen, C. Claeys, et al.. (2002). Radiation effect on n-MOSFETs fabricated in a BiCMOS process. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 186(1-4). 419–423. 1 indexed citations
15.
Ohyama, H., T. Hirao, Eddy Simoen, et al.. (2001). Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation. Physica B Condensed Matter. 308-310. 1226–1229. 21 indexed citations
16.
Efremov, A. A., et al.. (2001). Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling. Journal of The Electrochemical Society. 148(5). F92–F92. 2 indexed citations
17.
Gutiérrez-D, Edmundo A., C. Claeys, E. Simoen, & S. Koshevaya. (1998). Perspectives of the cryo-electronics for the year 2000. 8(3). 1 indexed citations
18.
Lukyanchikova, N., et al.. (1997). RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs. European Solid-State Device Research Conference. 368–371. 1 indexed citations
19.
Vanhellemont, Jan, et al.. (1994). Deep levels in heat-treated and252Cf-irradiated p-type silicon substrates with different oxygen content. Semiconductor Science and Technology. 9(8). 1474–1479. 7 indexed citations
20.
Vanhellemont, Jan, J. van Landuyt, S. Amelinckx, et al.. (1983). Local oxidation induced dislocation generation near [100] Si3N4 film edges. Applied Physics Letters. 43(12). 1120–1122. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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