T. Malinauskas

1.4k total citations
94 papers, 1.1k citations indexed

About

T. Malinauskas is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, T. Malinauskas has authored 94 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Condensed Matter Physics, 49 papers in Atomic and Molecular Physics, and Optics and 43 papers in Electrical and Electronic Engineering. Recurrent topics in T. Malinauskas's work include GaN-based semiconductor devices and materials (64 papers), Semiconductor Quantum Structures and Devices (38 papers) and Semiconductor materials and devices (24 papers). T. Malinauskas is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Semiconductor Quantum Structures and Devices (38 papers) and Semiconductor materials and devices (24 papers). T. Malinauskas collaborates with scholars based in Lithuania, Germany and United States. T. Malinauskas's co-authors include K. Jarašiūnas, R. Aleksiejūnas, B. Ḿonemar, A. Kadys, T. Paskova, J. P. Bergman, M. Sūdžius, S. Miasojedovas, B. Beaumont and A. Usui and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

T. Malinauskas

90 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Malinauskas Lithuania 20 673 522 518 432 325 94 1.1k
Takashi Inushima Japan 16 780 1.2× 677 1.3× 351 0.7× 422 1.0× 410 1.3× 64 1.2k
M. Marangolo France 22 253 0.4× 782 1.5× 320 0.6× 791 1.8× 577 1.8× 95 1.4k
Branko Šantić Croatia 17 704 1.0× 699 1.3× 625 1.2× 361 0.8× 462 1.4× 46 1.3k
T. M. Uen Taiwan 19 464 0.7× 495 0.9× 259 0.5× 210 0.5× 515 1.6× 115 1.0k
R. N. Kyutt Russia 13 276 0.4× 412 0.8× 337 0.7× 280 0.6× 145 0.4× 95 738
A. Usikov Russia 21 1.4k 2.1× 747 1.4× 566 1.1× 511 1.2× 792 2.4× 120 1.6k
E.B. Svedberg United States 19 243 0.4× 364 0.7× 283 0.5× 859 2.0× 587 1.8× 45 1.2k
T. Bretagnon France 19 437 0.6× 431 0.8× 406 0.8× 474 1.1× 227 0.7× 55 952
R. L. Hengehold United States 17 257 0.4× 603 1.2× 704 1.4× 327 0.8× 234 0.7× 84 1.0k
Sylvie Contreras France 18 267 0.4× 373 0.7× 905 1.7× 495 1.1× 192 0.6× 103 1.2k

Countries citing papers authored by T. Malinauskas

Since Specialization
Citations

This map shows the geographic impact of T. Malinauskas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Malinauskas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Malinauskas more than expected).

Fields of papers citing papers by T. Malinauskas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Malinauskas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Malinauskas. The network helps show where T. Malinauskas may publish in the future.

Co-authorship network of co-authors of T. Malinauskas

This figure shows the co-authorship network connecting the top 25 collaborators of T. Malinauskas. A scholar is included among the top collaborators of T. Malinauskas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Malinauskas. T. Malinauskas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tomašiūnas, R., Martin Mandl, T. Malinauskas, et al.. (2025). Comparative analysis of structure and interfacial electrical properties of transition metal oxide layers grown on GaN using atomic layer deposition. Surfaces and Interfaces. 60. 105982–105982.
2.
Ščajev, Patrik, S. Miasojedovas, Algirdas Mekys, et al.. (2024). Oxidized Graphite Nanocrystals for White Light Emission. Crystals. 14(6). 505–505.
3.
Kadys, A., et al.. (2023). Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask. Nanomaterials. 13(4). 784–784. 3 indexed citations
4.
Stanionytė, Sandra, T. Malinauskas, Gediminas Niaura, et al.. (2022). The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates. Materials. 15(14). 4847–4847. 2 indexed citations
5.
Kadys, A., J. Mickevičius, Ilja Ignatjev, et al.. (2022). MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates. Nanomaterials. 12(5). 785–785. 10 indexed citations
6.
Kolenda, M., et al.. (2022). The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition. Materials Science and Engineering B. 284. 115850–115850.
7.
Kadys, A., J. Mickevičius, Ilja Ignatjev, et al.. (2021). Remote epitaxy of GaN via graphene on GaN/sapphire templates. Journal of Physics D Applied Physics. 54(20). 205103–205103. 29 indexed citations
8.
Ščajev, Patrik, Gediminas Kreiza, T. Malinauskas, et al.. (2020). Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer. Journal of Applied Physics. 128(11). 12 indexed citations
9.
Nargelas, Saulius, J. Mickevičius, A. Kadys, K. Jarašiūnas, & T. Malinauskas. (2020). Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics. Optics & Laser Technology. 134. 106624–106624. 6 indexed citations
10.
Malinauskas, T., S. Yu. Karpov, H.‐J. Lugauer, et al.. (2018). Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes. Semiconductor Science and Technology. 34(1). 15007–15007. 7 indexed citations
11.
Gaubas, E., T. Malinauskas, S. Miasojedovas, et al.. (2017). Study of recombination characteristics in MOCVD grown GaN epi-layers on Si. Semiconductor Science and Technology. 32(12). 125014–125014. 6 indexed citations
12.
Mickevičius, J., et al.. (2017). Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth. Applied Surface Science. 427. 1027–1032. 25 indexed citations
13.
Frentrup, Martin, et al.. (2016). 希土類元素酸化物中間層を持つSi(100)上に成長した半極性GaNの貫通ピラミッドのファセット解析. Journal of Applied Physics. 120(10). 6. 1 indexed citations
14.
Kudriašov, Viačeslav, et al.. (2012). Holographic study of ultrafast optical excitation in GaN film induced by nonlinear propagation of light. Optics Letters. 37(23). 4916–4916. 6 indexed citations
15.
Malinauskas, T., K. Jarašiūnas, Е. В. Ивакин, N. Tranchant, & Miloš Nesládek. (2010). Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique. physica status solidi (a). 207(9). 2058–2063. 23 indexed citations
16.
Jarašiūnas, K., T. Malinauskas, & R. Aleksiejūnas. (2007). Dislocation-density Dependent Carrier Lifetime and Stimulated Recombination Threshold in GaN. AIP conference proceedings. 893. 295–296. 1 indexed citations
17.
Paskova, T., R. Schifano, T. Paskova, et al.. (2006). Structural defect-related emissions in nonpolar a-plane GaN. Physica B Condensed Matter. 376-377. 473–476. 31 indexed citations
18.
Malinauskas, T., R. Aleksiejūnas, K. Jarašiūnas, et al.. (2006). All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN. Journal of Crystal Growth. 300(1). 223–227. 32 indexed citations
19.
Malinauskas, T. & K. Jarašiūnas. (2005). On Optical Characterization of Carrier Lifetimes in GaN Layers by Time-Resolved Four-Wave Mixing and Photoluminescence Techniques. Acta Physica Polonica A. 108(5). 781–787. 2 indexed citations
20.
Aleksiejūnas, R., M. Sūdžius, V. Gudelis, et al.. (2003). Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2686–2690. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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