Sven Beyer

1.9k total citations · 1 hit paper
48 papers, 1.3k citations indexed

About

Sven Beyer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Sven Beyer has authored 48 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 3 papers in Hardware and Architecture. Recurrent topics in Sven Beyer's work include Ferroelectric and Negative Capacitance Devices (47 papers), Semiconductor materials and devices (38 papers) and Advanced Memory and Neural Computing (29 papers). Sven Beyer is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (47 papers), Semiconductor materials and devices (38 papers) and Advanced Memory and Neural Computing (29 papers). Sven Beyer collaborates with scholars based in Germany, United States and India. Sven Beyer's co-authors include Stefan Dünkel, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck, Martin Trentzsch, Evelyn T. Breyer, Johannes Müller, Kai Ni, Suman Datta and Xiaobo Sharon Hu and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

Sven Beyer

44 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ferroelectric ternary content-addressable memory for one-shot learning

2019 282 citations Kai Ni, Xunzhao Yin et al. Nature Electronics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Sven Beyer Germany	19	1.3k	469	85	68	67	48	1.3k
Stefan Dünkel Germany	16	1.1k 0.9×	400 0.9×	78 0.9×	53 0.8×	63 0.9×	37	1.1k
Martin Trentzsch Germany	18	1.5k 1.2×	696 1.5×	74 0.9×	46 0.7×	66 1.0×	40	1.6k
Kai‐Shin Li Taiwan	13	739 0.6×	302 0.6×	51 0.6×	59 0.9×	24 0.4×	36	804
Shosuke Fujii Japan	15	706 0.6×	238 0.5×	48 0.6×	55 0.8×	38 0.6×	53	748
Tarek Ali Germany	23	1.9k 1.5×	1.0k 2.2×	63 0.7×	77 1.1×	29 0.4×	75	2.0k
Wen‐Kuan Yeh Taiwan	17	1.1k 0.9×	238 0.5×	48 0.6×	125 1.8×	32 0.5×	93	1.2k
Jixuan Wu China	14	630 0.5×	403 0.9×	78 0.9×	57 0.8×	27 0.4×	86	773
Ricardo Olivo Germany	19	1.1k 0.9×	636 1.4×	39 0.5×	38 0.6×	29 0.4×	65	1.2k
Aaryan Oberoi United States	10	608 0.5×	366 0.8×	91 1.1×	128 1.9×	40 0.6×	11	822
Min‐Cheng Chen Taiwan	14	805 0.6×	258 0.6×	46 0.5×	99 1.5×	13 0.2×	34	850

Countries citing papers authored by Sven Beyer

Since Specialization

Citations

This map shows the geographic impact of Sven Beyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sven Beyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sven Beyer more than expected).

Fields of papers citing papers by Sven Beyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sven Beyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sven Beyer. The network helps show where Sven Beyer may publish in the future.

Co-authorship network of co-authors of Sven Beyer

This figure shows the co-authorship network connecting the top 25 collaborators of Sven Beyer. A scholar is included among the top collaborators of Sven Beyer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sven Beyer. Sven Beyer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Luo, Yuan-Chun, et al.. (2025). Ternary Content Addressable Memory With Ferroelectric Non-Volatile Capacitor. IEEE Electron Device Letters. 46(5). 872–875. 2 indexed citations

Mulaosmanovic, Halid, et al.. (2024). Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements. Microelectronic Engineering. 296. 112284–112284.

Lashkare, Sandip, Halid Mulaosmanovic, Veeresh Deshpande, et al.. (2024). Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications. IEEE Transactions on Electron Devices. 71(5). 2957–2962. 1 indexed citations

Mulaosmanovic, Halid, et al.. (2024). Exploring Charge Trapping Dynamics in Si:HfO₂-FeFETs by Temperature-Dependent Electrical Characterization. 1–3.

Lashkare, Sandip, et al.. (2024). FeFET-Based MirrorBit Cell for High-Density NVM Storage. IEEE Transactions on Electron Devices. 71(4). 2380–2385. 3 indexed citations

Mulaosmanovic, Halid, et al.. (2024). Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out. 1–5. 5 indexed citations

Xiao, Yi, Halid Mulaosmanovic, Sven Beyer, et al.. (2024). On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency. 1–4.

Dünkel, Stefan, Halid Mulaosmanovic, Johannes Müller, et al.. (2024). Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors. 1–5. 1 indexed citations

Mulaosmanovic, Halid, Sven Beyer, Xiao Gong, et al.. (2023). Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory. IEEE Electron Device Letters. 45(7). 1165–1168. 1 indexed citations

10.

Kim, Tae‐Hyeon, Yuan-Chun Luo, Halid Mulaosmanovic, et al.. (2023). Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse. IEEE Electron Device Letters. 44(10). 1628–1631. 31 indexed citations

11.

Mulaosmanovic, Halid, et al.. (2023). Sub-Nanosecond Switching of Si:HfO₂ Ferroelectric Field-Effect Transistor. Nano Letters. 23(4). 1395–1400. 43 indexed citations

12.

Müller, Franz, Yannick Raffel, Maximilian Lederer, et al.. (2023). Fixed charges at the HfO 2 /SiO2 interface: Impact on the memory window of FeFET. SHILAP Revista de lepidopterología. 4. 100050–100050. 2 indexed citations

13.

Parmar, Vivek, Franz Müller, Sandeep Kaur Kingra, et al.. (2023). Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator. SHILAP Revista de lepidopterología. 5(6). 12 indexed citations

14.

Zhao, Zijian, Shan Deng, Yi Xiao, et al.. (2022). On the Feasibility of 1T Ferroelectric FET Memory Array. IEEE Transactions on Electron Devices. 69(12). 6722–6730. 7 indexed citations

15.

Xu, Yixin, Shan Deng, Zijian Zhao, et al.. (2022). Hardware functional obfuscation with ferroelectric active interconnects. Nature Communications. 13(1). 2235–2235. 12 indexed citations

16.

Raffel, Yannick, Sourav De, Maximilian Lederer, et al.. (2022). Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO₂-Based FeFETs for In-Memory-Computing Applications. ACS Applied Electronic Materials. 4(11). 5292–5300. 23 indexed citations

17.

Raffel, Yannick, Maximilian Lederer, Ricardo Olivo, et al.. (2022). Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 8–11. 7 indexed citations

18.

Mulaosmanovic, Halid, Evelyn T. Breyer, Stefan Dünkel, et al.. (2021). Ferroelectric field-effect transistors based on HfO ₂ : a review. Nanotechnology. 32(50). 502002–502002. 213 indexed citations

19.

Breyer, Evelyn T., Halid Mulaosmanovic, Jens Trommer, et al.. (2020). Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory. IEEE Journal of the Electron Devices Society. 8. 748–756. 38 indexed citations

20.

Ni, Kai, Xunzhao Yin, Ann Franchesca Laguna, et al.. (2020). Author Correction: Ferroelectric ternary content-addressable memory for one-shot learning. Nature Electronics. 3(2). 130–130. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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