Jong‐Won Lim

433 total citations
45 papers, 336 citations indexed

About

Jong‐Won Lim is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jong‐Won Lim has authored 45 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 41 papers in Electrical and Electronic Engineering and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jong‐Won Lim's work include GaN-based semiconductor devices and materials (41 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (20 papers). Jong‐Won Lim is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (20 papers). Jong‐Won Lim collaborates with scholars based in South Korea, United States and Poland. Jong‐Won Lim's co-authors include Ho‐Kyun Ahn, Sang‐Heung Lee, Byoung‐Gue Min, Jung‐Hee Lee, Hyun‐Seok Kim, Hyun‐Jung Kim, Sung‐Jae Chang, J.‐H. Lee, In‐Tae Hwang and Jeong-Gil Kim and has published in prestigious journals such as Chemical Engineering Journal, ACS Applied Materials & Interfaces and Journal of Materials Chemistry A.

In The Last Decade

Jong‐Won Lim

40 papers receiving 316 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jong‐Won Lim South Korea 11 277 261 141 74 63 45 336
Alaleh Tajalli Italy 11 429 1.5× 378 1.4× 186 1.3× 79 1.1× 70 1.1× 17 469
Towhidur Razzak United States 12 344 1.2× 293 1.1× 217 1.5× 92 1.2× 54 0.9× 22 403
P. Murugapandiyan India 12 254 0.9× 284 1.1× 121 0.9× 84 1.1× 67 1.1× 40 379
Gourab Dutta India 9 265 1.0× 240 0.9× 155 1.1× 82 1.1× 76 1.2× 28 331
J. L. Garrett United States 7 190 0.7× 237 0.9× 244 1.7× 191 2.6× 40 0.6× 18 487
E. Canato Italy 12 392 1.4× 347 1.3× 156 1.1× 57 0.8× 79 1.3× 19 425
A. Mohanbabu India 12 257 0.9× 248 1.0× 102 0.7× 40 0.5× 95 1.5× 27 319
Shichuang Sun China 8 328 1.2× 248 1.0× 220 1.6× 108 1.5× 47 0.7× 18 365
Joachim Wuerfl Germany 10 370 1.3× 379 1.5× 158 1.1× 72 1.0× 80 1.3× 23 466
N. Tipirneni United States 8 312 1.1× 312 1.2× 122 0.9× 46 0.6× 46 0.7× 16 365

Countries citing papers authored by Jong‐Won Lim

Since Specialization
Citations

This map shows the geographic impact of Jong‐Won Lim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jong‐Won Lim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jong‐Won Lim more than expected).

Fields of papers citing papers by Jong‐Won Lim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jong‐Won Lim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jong‐Won Lim. The network helps show where Jong‐Won Lim may publish in the future.

Co-authorship network of co-authors of Jong‐Won Lim

This figure shows the co-authorship network connecting the top 25 collaborators of Jong‐Won Lim. A scholar is included among the top collaborators of Jong‐Won Lim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jong‐Won Lim. Jong‐Won Lim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Jeong, Jinyoung, Deok‐Hye Park, Jae‐Sung Jang, et al.. (2025). Machine learning-driven discovery of innovative hybrid solid electrolytes for high-performance all-solid-state batteries. Chemical Engineering Journal. 511. 161926–161926. 6 indexed citations
3.
Park, Deok‐Hye, et al.. (2024). F-doped Co-free LiNixMn1-xO2 (0.7 ≤ x ≤ 0.9) cathodes for ameliorating electrochemical performance of Li-ion batteries. Materials Today Energy. 41. 101520–101520. 8 indexed citations
4.
5.
Park, Deok‐Hye, Jihwan Kim, Jae‐Sung Jang, et al.. (2024). Electrospun Fe-ZIF derived carbon nanofibers for boosting adsorption and redox kinetics of polysulfides in lithium–sulfur batteries. Journal of Materials Chemistry A. 13(5). 3645–3658. 1 indexed citations
6.
Choi, Sumin, Sung‐Jae Chang, Ho‐Kyun Ahn, et al.. (2023). Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate. Materials Science in Semiconductor Processing. 170. 107985–107985. 3 indexed citations
7.
Chang, Sung‐Jae, Dong‐Seok Kim, Tae‐Woo Kim, et al.. (2023). Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator. Nanomaterials. 13(5). 898–898. 1 indexed citations
8.
Ahn, Ho‐Kyun, et al.. (2022). X-Band GaN Monolithic Microwave Integrated Circuit Low Noise Amplifier Using Inductive Source Degeneration. The Journal of Korean Institute of Electromagnetic Engineering and Science. 33(5). 356–364.
9.
Chang, Sung‐Jae, Sang-Youl Lee, Hwan-Hee Jeong, et al.. (2021). Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors. Crystals. 11(11). 1414–1414. 5 indexed citations
10.
Moon, Seokho, Sung‐Jae Chang, Youngjae Kim, et al.. (2021). Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications. ACS Applied Materials & Interfaces. 13(49). 59440–59449. 17 indexed citations
11.
Chang, Sung‐Jae, Dong‐Seok Kim, Tae‐Woo Kim, et al.. (2020). Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer. Nanomaterials. 10(11). 2175–2175. 13 indexed citations
12.
Chang, Sung‐Jae, Jeong-Jin Kim, Sung‐Bum Bae, et al.. (2019). Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs. ECS Journal of Solid State Science and Technology. 8(12). Q245–Q248. 9 indexed citations
13.
Lee, Hyung‐Seok, et al.. (2019). Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond. Journal of Nanoscience and Nanotechnology. 19(10). 6119–6122. 1 indexed citations
14.
Kim, Hyun‐Jung, et al.. (2018). Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure. Applied Sciences. 8(6). 974–974. 27 indexed citations
15.
Chang, Sung‐Jae, Ho‐Kyun Ahn, Jeong-Jin Kim, et al.. (2018). DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess. ECS Journal of Solid State Science and Technology. 7(4). P197–P200. 3 indexed citations
16.
Kim, Jeong-Gil, J.‐H. Lee, K. W. Kim, et al.. (2018). Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier. Solid-State Electronics. 152. 24–28. 11 indexed citations
17.
Kim, Hyun‐Jung, et al.. (2018). DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure. Journal of Nanoscience and Nanotechnology. 19(4). 2319–2322. 7 indexed citations
18.
Bhuiyan, Maruf, Hong Zhou, Sung‐Jae Chang, et al.. (2017). Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric. IEEE Transactions on Nuclear Science. 65(1). 46–52. 16 indexed citations
19.
Son, Dong-Hyeok, Young‐Woo Jo, Chul‐Ho Won, et al.. (2017). Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching. Solid-State Electronics. 141. 7–12. 8 indexed citations
20.
Lim, Jong‐Won, et al.. (2005). A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs. ETRI Journal. 27(3). 304–311. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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