Mona A. Ebrish

517 total citations
29 papers, 402 citations indexed

About

Mona A. Ebrish is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Mona A. Ebrish has authored 29 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 10 papers in Materials Chemistry. Recurrent topics in Mona A. Ebrish's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). Mona A. Ebrish is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). Mona A. Ebrish collaborates with scholars based in United States. Mona A. Ebrish's co-authors include Steven J. Koester, Eric J. Olson, Yang Su, Travis J. Anderson, James C. Gallagher, Karl D. Hobart, David A. Deen, Alan G. Jacobs, Brendan Gunning and Michael A. Mastro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Mona A. Ebrish

27 papers receiving 392 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mona A. Ebrish United States	12	273	256	130	118	57	29	402
Taofei Zhou China	11	186 0.7×	190 0.7×	131 1.0×	97 0.8×	73 1.3×	28	332
Dong Sing Wuu Taiwan	9	258 0.9×	271 1.1×	92 0.7×	81 0.7×	59 1.0×	30	367
Sheng-Wen Wang Taiwan	9	181 0.7×	234 0.9×	152 1.2×	106 0.9×	121 2.1×	12	380
Thi Kim Oanh Vu South Korea	10	152 0.6×	211 0.8×	52 0.4×	166 1.4×	28 0.5×	34	329
Yuanping Sun China	11	205 0.8×	320 1.3×	45 0.3×	161 1.4×	71 1.2×	37	415
Arun Malla Chowdhury India	10	165 0.6×	215 0.8×	130 1.0×	152 1.3×	102 1.8×	17	338
Zhenhua Lou China	7	409 1.5×	528 2.1×	72 0.6×	201 1.7×	193 3.4×	10	656
Sami Alghamdi Saudi Arabia	11	223 0.8×	294 1.1×	103 0.8×	334 2.8×	30 0.5×	28	461
R. Q. Wu China	7	107 0.4×	258 1.0×	44 0.3×	100 0.8×	35 0.6×	9	306
Basanta Roul India	11	205 0.8×	243 0.9×	68 0.5×	119 1.0×	95 1.7×	18	361

Countries citing papers authored by Mona A. Ebrish

Since Specialization

Citations

This map shows the geographic impact of Mona A. Ebrish's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mona A. Ebrish with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mona A. Ebrish more than expected).

Fields of papers citing papers by Mona A. Ebrish

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mona A. Ebrish. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mona A. Ebrish. The network helps show where Mona A. Ebrish may publish in the future.

Co-authorship network of co-authors of Mona A. Ebrish

This figure shows the co-authorship network connecting the top 25 collaborators of Mona A. Ebrish. A scholar is included among the top collaborators of Mona A. Ebrish based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mona A. Ebrish. Mona A. Ebrish is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

McBride, James R., Travis J. Anderson, Robert Kaplar, et al.. (2025). Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes. IEEE Transactions on Nuclear Science. 72(8). 2377–2385. 2 indexed citations

Ebrish, Mona A., et al.. (2025). Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy. Applied Physics Letters. 126(13).

McCurdy, Michael W., Travis J. Anderson, Alan G. Jacobs, et al.. (2024). Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design. Applied Physics Letters. 124(13). 8 indexed citations

Ebrish, Mona A., Matthew Porter, Alan G. Jacobs, et al.. (2023). Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes. Applied Physics Express. 16(11). 116501–116501. 2 indexed citations

Gallagher, James C., Michael A. Mastro, Mona A. Ebrish, et al.. (2023). Using machine learning with optical profilometry for GaN wafer screening. Scientific Reports. 13(1). 3352–3352. 1 indexed citations

Georgiev, Daniel G., Andrew D. Koehler, Travis J. Anderson, et al.. (2022). A Simple Edge Termination Design for Vertical GaN P-N Diodes. IEEE Transactions on Electron Devices. 69(9). 5096–5103. 17 indexed citations

Gallagher, James C., Mona A. Ebrish, Alan G. Jacobs, et al.. (2022). Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques. Scientific Reports. 12(1). 658–658. 14 indexed citations

Georgiev, Daniel G., Andrew D. Koehler, Travis J. Anderson, et al.. (2022). Characterization and Modeling of a 1.3 kV Vertical GaN Diode. 2022 IEEE Applied Power Electronics Conference and Exposition (APEC). 928–935. 1 indexed citations

Ebrish, Mona A., Matthew Porter, Alan G. Jacobs, et al.. (2022). Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination. Crystals. 12(5). 623–623. 7 indexed citations

10.

Han, Sangwoo, et al.. (2021). 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes. IEEE Transactions on Electron Devices. 68(11). 5736–5741. 21 indexed citations

11.

Gallagher, James C., Travis J. Anderson, Andrew D. Koehler, et al.. (2021). Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance. Journal of Electronic Materials. 50(6). 3013–3021. 9 indexed citations

12.

Ebrish, Mona A., Travis J. Anderson, Alan G. Jacobs, et al.. (2021). Process Optimization for Selective Area Doping of GaN by Ion Implantation. Journal of Electronic Materials. 50(8). 4642–4649. 6 indexed citations

13.

Tadjer, Marko J., Fikadu Alema, A. Osinsky, et al.. (2020). Characterization of β-Ga ₂ O ₃ homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. Journal of Physics D Applied Physics. 54(3). 34005–34005. 35 indexed citations

14.

Foster, Geoffrey M., Andrew D. Koehler, Mona A. Ebrish, et al.. (2020). Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments. Applied Physics Letters. 117(8). 21 indexed citations

15.

Ebrish, Mona A., Travis J. Anderson, Andrew D. Koehler, et al.. (2020). A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes. IEEE Transactions on Semiconductor Manufacturing. 33(4). 546–551. 5 indexed citations

16.

Meyers, Vincent, Travis J. Anderson, James C. Gallagher, et al.. (2020). p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing. Journal of Applied Physics. 128(8). 18 indexed citations

17.

Olson, Eric J., Rui Ma, Tao Sun, et al.. (2015). Capacitive Sensing of Intercalated H₂O Molecules Using Graphene. ACS Applied Materials & Interfaces. 7(46). 25804–25812. 32 indexed citations

18.

Deen, David A., Eric J. Olson, Mona A. Ebrish, & Steven J. Koester. (2014). Graphene-Based Quantum Capacitance Wireless Vapor Sensors. IEEE Sensors Journal. 14(5). 1459–1466. 34 indexed citations

19.

Ebrish, Mona A., Eric J. Olson, & Steven J. Koester. (2014). Effect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene. ACS Applied Materials & Interfaces. 6(13). 10296–10303. 22 indexed citations

20.

Su, Yang, Mona A. Ebrish, Eric J. Olson, & Steven J. Koester. (2013). SnSe2 field-effect transistors with high drive current. Applied Physics Letters. 103(26). 98 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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