Alan G. Jacobs

1.1k citations

62 papers · 809 indexed · 1 hit paper · h-index 14

Impact in

Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Electronic, Optical and Magnetic Materials 28
- Ga2O3 and related materials 27

Co-authors: Marko J. Tadjer Joseph Spencer Yuhao Zhang A. Mock M. Schubert Michael O. Thompson David J. Norris Kurtis Leschkies
Journals: Applied Physics Letters (7 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (5 papers)physica status solidi (a) (4 papers)Journal of Electronic Materials (3 papers)Scientific Reports (2 papers)
Partner nations: United States Germany Hong Kong

In The Last Decade

Alan G. Jacobs

56 papers receiving 792 citations

Hit Papers

align trajectories log scale

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 2022 · 230 citations

Peers

Countries citing papers authored by Alan G. Jacobs

Since Specialization

Citations

This map shows the geographic impact of Alan G. Jacobs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alan G. Jacobs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alan G. Jacobs more than expected).

Fields of papers citing papers by Alan G. Jacobs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alan G. Jacobs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alan G. Jacobs. The network helps show where Alan G. Jacobs may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Alan G. Jacobs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Alan G. Jacobs Line = papers co-authored together Alan G. Jacobs links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Characterization of extended defect evolution in 1.2–12 μm thick homoepitaxial (010) β-Ga2O3 grown by close-injection showerhead metal-organic chemical vapor deposition APL Materials ·Marko J. Tadjer, Kenny Huynh, James C. Culbertson, E. R. Glaser, Michael E. Liao, John T. Gaskins, E. Skriegan, Alan G. Jacobs, Nadeemullah A. Mahadik, James Spencer Lundh, Jaime A. Freitas, Fikadu Alema, A. Osinsky, Patrick E. Hopkins, Mark S. Goorsky, Karl D. Hobart	2025	0
2	Single-Event Transients in Vertical GaN Diodes With N-Implanted Hybrid Edge Termination IEEE Transactions on Nuclear Science ·Andrew D. Koehler, Ani Khachatrian, Alan G. Jacobs, James Spencer Lundh, Adrian Ildefonso, Cory D. Cress, Geoffrey M. Foster, Grazielli Fernandes, Daniel G. Georgiev, Raghav Khanna, Karl D. Hobart, Travis J. Anderson	2025	0
3	Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability SHILAP Revista de lepidopterología ·Joseph Spencer, Yuan Qin, Alan G. Jacobs, Boyan Wang, Neeraj Nepal, E. Skriegan, Matthew Porter, Bixuan Wang, Geoffrey M. Foster, Akito Kuramata, Karl D. Hobart, Travis J. Anderson, Yuhao Zhang, Marko J. Tadjer	2025	1
4	Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design Applied Physics Letters ·Heichiro Tohata, A. Griffin, Moreau Ferret, Michael W. McCurdy, Travis J. Anderson, Alan G. Jacobs, Robert Kaplar, Dennis R. Ball, En Xia Zhang, Sokrates T. Pantelides, Robert A. Reed, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	2024	8
5	Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN physica status solidi (a) ·Alan G. Jacobs, Boris N. Feigelson, James Spencer Lundh, Joseph Spencer, Jaime A. Freitas, Brendan Gunning, Robert Kaplar, Yuhao Zhang, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson	2024	1
6	Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability IEEE Electron Device Letters ·James Spencer Lundh, Alan G. Jacobs, Karkan Delara, Grazielli Fernandes, Daniel G. Georgiev, Andrew D. Koehler, Raghav Khanna, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson	2024	2
7	Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond Applied Physics Letters ·E. Skriegan, James Spencer Lundh, Tatyana I. Feygelson, Kohei Sasaki, Zhe Cheng, Joseph Spencer, Pai-Ying Liao, Jennifer K. Hite, Daniel J. Pennachio, Alan G. Jacobs, Michael A. Mastro, Boris N. Feigelson, Akito Kuramata, Peide D. Ye, Samuel Graham, Bradford B. Pate, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer	2024	9
8	Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance IEEE Transactions on Electron Devices ·Karkan Delara, Grazielli Fernandes, G. Stridh, Daniel G. Georgiev, Raghav Khanna, Alan G. Jacobs, James Spencer Lundh, James C. Gallagher, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson	2024	3
9	10 kV, 250°C Operational, Enhancement-Mode Ga₂O₃ JFET with Charge-Balance and Hybrid-Drain Designs Yuan Qin, Е. П. Чайко, Hehe Gong, Alan G. Jacobs, Joseph Spencer, Matthew Porter, Bixuan Wang, Kohei Sasaki, Chia-Hung Lin, Marko J. Tadjer, Yuhao Zhang	2024	6
10	Improving vertical GaN p–n diode performance with room temperature defect mitigation Semiconductor Science and Technology ·S. C. Esparza-Gonzáles, James C. Gallagher, Alan G. Jacobs, Karl D. Hobart, Travis J. Anderson, Brendan Gunning, Robert Kaplar, Douglas E. Wolfe, Aman Haque	2023	1
11	Conformal coating of macroscopic nanoparticle compacts with ZnO via atomic layer deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·B. Greenberg, Kevin Anderson, Alan G. Jacobs, J. P. Cordier, C. Feigl, Eric A. Patterson, James A. Wollmershauser, Boris N. Feigelson	2023	0
12	Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation physica status solidi (a) ·Alan G. Jacobs, Joseph Spencer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson, Boris N. Feigelson	2023	4
13	10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C IEEE Electron Device Letters ·Yuan Qin, Ming Xiao, Matthew Porter, Shyama Talib Hussain, Joseph Spencer, Zhonghao Du, Alan G. Jacobs, Kohei Sasaki, Jirawan Pålsson, Marko J. Tadjer, Yuhao Zhang	2023	57
14	NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·王子立, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, F. Ren, E. Skriegan, James Spencer Lundh, Joseph Spencer, Fikadu Alema, A. Osinsky, Alan G. Jacobs, Karl D. Hobart, Marko J. Tadjer, S. J. Pearton	2023	8
15	A Simple Edge Termination Design for Vertical GaN P-N Diodes IEEE Transactions on Electron Devices ·Karkan Delara, Grazielli Fernandes, Sonia Mari Fogiato, G. Stridh, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan G. Jacobs, Mona A. Ebrish, Brendan Gunning, Robert Kaplar, Karl D. Hobart, Raghav Khanna	2022	17
16	A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 Applied Physics Reviews ·Joseph Spencer, A. Mock, Alan G. Jacobs, M. Schubert, Yuhao Zhang, Marko J. Tadjer Hit paper breakdown →	2022	230
17	Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 Applied Physics Letters ·Krista Spencer Graham, Xinyi Xia, F. Ren, Alan G. Jacobs, Marko J. Tadjer, S. J. Pearton, Honggyu Kim	2022	28
18	Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation IEEE Transactions on Semiconductor Manufacturing ·James C. Gallagher, Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, Alan G. Jacobs, Boris N. Feigelson, Michael A. Mastro, Jennifer K. Hite, Karl D. Hobart	2019	5
19	Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation physica status solidi (a) ·Alan G. Jacobs, Boris N. Feigelson, Jennifer K. Hite, 安勇澤井, Lunet E. Luna, Travis J. Anderson, Francis J. Kub	2019	12
20	Polarity dependent implanted p-type dopant activation in GaN Japanese Journal of Applied Physics ·Alan G. Jacobs, Boris N. Feigelson, Jennifer K. Hite, 安勇澤井, Lunet E. Luna, Travis J. Anderson, Francis J. Kub	2019	12

About Alan G. Jacobs

Alan G. Jacobs is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Renewable Energy, Sustainability and the Environment, having authored 62 papers that have together received 809 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Ga2O3 and related materials (27 papers), ZnO doping and properties (24 papers), Semiconductor materials and devices (21 papers), Silicon Carbide Semiconductor Technologies (11 papers), Electronic and Structural Properties of Oxides (8 papers), Advanced Photocatalysis Techniques (7 papers) and Force Microscopy Techniques and Applications (5 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (410 citations), Condensed Matter Physics (177 citations), Materials Chemistry (583 citations), Renewable Energy, Sustainability and the Environment (186 citations) and Electrical and Electronic Engineering (380 citations). Alan G. Jacobs has collaborated with scholars based in United States, Germany and Hong Kong. Frequent co-authors include Marko J. Tadjer, Joseph Spencer, Yuhao Zhang, A. Mock, M. Schubert, Michael O. Thompson, David J. Norris, Kurtis Leschkies, Eray S. Aydil and Travis J. Anderson. Their work appears in journals such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, physica status solidi (a), Journal of Electronic Materials and Scientific Reports.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact