Jung‐Hee Lee

5.4k total citations
296 papers, 4.3k citations indexed

About

Jung‐Hee Lee is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jung‐Hee Lee has authored 296 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 212 papers in Electrical and Electronic Engineering, 188 papers in Condensed Matter Physics and 92 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jung‐Hee Lee's work include GaN-based semiconductor devices and materials (188 papers), Semiconductor materials and devices (149 papers) and Ga2O3 and related materials (86 papers). Jung‐Hee Lee is often cited by papers focused on GaN-based semiconductor devices and materials (188 papers), Semiconductor materials and devices (149 papers) and Ga2O3 and related materials (86 papers). Jung‐Hee Lee collaborates with scholars based in South Korea, France and United States. Jung‐Hee Lee's co-authors include Ki‐Sik Im, Jae‐Hoon Lee, Dong‐Seok Kim, Chul‐Ho Won, M. Siva Pratap Reddy, Hee‐Sung Kang, In Man Kang, Young‐Woo Jo, Ki-Won Kim and S. Cristoloveanu and has published in prestigious journals such as Nucleic Acids Research, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jung‐Hee Lee

286 papers receiving 4.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jung‐Hee Lee South Korea 33 2.9k 2.5k 1.3k 1.1k 884 296 4.3k
H. W. Choi Hong Kong 30 1.8k 0.6× 1.7k 0.7× 500 0.4× 876 0.8× 1.1k 1.2× 193 3.3k
Srinivasan Raghavan India 33 1.9k 0.7× 1.3k 0.5× 1.2k 0.9× 3.1k 2.7× 457 0.5× 157 4.6k
Ray‐Ming Lin Taiwan 22 1.2k 0.4× 941 0.4× 1.7k 1.3× 709 0.6× 1.1k 1.2× 115 3.1k
Junxi Wang China 36 2.5k 0.9× 3.1k 1.2× 2.2k 1.7× 3.1k 2.7× 1.4k 1.6× 404 6.2k
Hui Yang China 42 2.9k 1.0× 4.4k 1.8× 2.3k 1.8× 2.2k 1.9× 2.3k 2.6× 359 6.8k
Jinmin Li China 38 2.1k 0.7× 3.7k 1.5× 2.5k 1.9× 3.1k 2.7× 1.2k 1.3× 397 6.1k
Changqing Chen China 32 956 0.3× 2.3k 0.9× 1.7k 1.4× 1.7k 1.5× 548 0.6× 156 3.4k
Yuantao Zhang China 33 2.5k 0.9× 868 0.3× 1.4k 1.1× 3.0k 2.6× 496 0.6× 198 4.2k
Yuh‐Renn Wu Taiwan 34 2.0k 0.7× 2.4k 1.0× 1.1k 0.9× 1.6k 1.4× 1.5k 1.7× 204 4.1k
Rachel A. Oliver United Kingdom 43 2.7k 1.0× 4.1k 1.6× 1.8k 1.4× 2.8k 2.5× 2.4k 2.7× 356 6.5k

Countries citing papers authored by Jung‐Hee Lee

Since Specialization
Citations

This map shows the geographic impact of Jung‐Hee Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jung‐Hee Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jung‐Hee Lee more than expected).

Fields of papers citing papers by Jung‐Hee Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jung‐Hee Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jung‐Hee Lee. The network helps show where Jung‐Hee Lee may publish in the future.

Co-authorship network of co-authors of Jung‐Hee Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Jung‐Hee Lee. A scholar is included among the top collaborators of Jung‐Hee Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jung‐Hee Lee. Jung‐Hee Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Jeong-Gil, et al.. (2021). Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs. IEEE Journal of the Electron Devices Society. 10. 19–22. 7 indexed citations
2.
Lee, Jung‐Hee, et al.. (2021). A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application. IEEE Access. 9. 101447–101453. 5 indexed citations
3.
Kim, Dong‐Seok, Jeong-Gil Kim, J.‐H. Lee, et al.. (2021). Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 175. 107957–107957. 4 indexed citations
4.
Im, Ki‐Sik, Sung Jin An, Christoforos Theodorou, et al.. (2020). Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs. IEEE Electron Device Letters. 41(6). 832–835. 19 indexed citations
5.
Im, Ki‐Sik, M. Siva Pratap Reddy, Christoforos Theodorou, et al.. (2019). Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel. IEEE Transactions on Electron Devices. 66(3). 1243–1248. 18 indexed citations
6.
Lee, Jae‐Hoon, Ki‐Sik Im, Jong Kyu Kim, & Jung‐Hee Lee. (2018). Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al2O3 Layer. IEEE Transactions on Electron Devices. 66(1). 324–329. 13 indexed citations
7.
Xu, Yue, S. Cristoloveanu, Maryline Bawedin, Ki‐Sik Im, & Jung‐Hee Lee. (2018). Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels. IEEE Transactions on Electron Devices. 65(3). 915–920. 15 indexed citations
8.
Seo, Jae Hwa, Young Jun Yoon, Dong-Hyeok Son, et al.. (2018). A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In0.08Al0.92N/GaN. IEEE Electron Device Letters. 39(10). 1552–1555. 3 indexed citations
9.
Lee, Jung‐Hee, Tae‐Woo Kim, Dae-Hyun Kim, et al.. (2018). Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors. IEEE Electron Device Letters. 39(12). 1844–1847. 14 indexed citations
10.
Reddy, M. Siva Pratap, Won-Sang Park, Ki‐Sik Im, & Jung‐Hee Lee. (2018). Dual-Surface Modification of AlGaN/GaN HEMTs Using TMAH and Piranha Solutions for Enhancing Current and 1/f-Noise Characteristics. IEEE Journal of the Electron Devices Society. 6. 791–796. 12 indexed citations
11.
12.
Im, Ki‐Sik, et al.. (2018). Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs. IEEE Journal of the Electron Devices Society. 6. 354–359. 6 indexed citations
13.
Bhuiyan, Maruf, Hong Zhou, Sung‐Jae Chang, et al.. (2017). Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric. IEEE Transactions on Nuclear Science. 65(1). 46–52. 16 indexed citations
14.
Lee, Jung‐Hee, et al.. (2016). Comparative study on AlGaN/GaN HFETs and MIS-HFETs. Open Access System for Information Sharing (Pohang University of Science and Technology).
15.
Kang, In Man, In-Tak Cho, Jong‐Ho Lee, et al.. (2016). 1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs. IEEE Electron Device Letters. 38(2). 252–254. 24 indexed citations
16.
17.
Hahm, Sung‐Ho, et al.. (2005). Device Characteristics of AlGaN/GaN MIS-HFET using Al2O3 Based High-k Dielectric. JSTS Journal of Semiconductor Technology and Science. 5(2). 107–112. 3 indexed citations
18.
Hang, Da‐Ren, et al.. (2004). Microwave-Modulated Shubnikov-de Haas-like Oscillations in an Al0.4Ga0.6N/GaN Electron System. Chinese Journal of Physics. 42(5). 629–635. 2 indexed citations
19.
Jang, Ho Won, et al.. (2003). Polarization‐induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy. physica status solidi (b). 240(2). 451–454. 16 indexed citations
20.
Hahm, Sung‐Ho, et al.. (1997). Nanometer-scale Gap Control for Low Voltage and High Current Operation of Field Emission Array (FEA). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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