Tso‐Ping Ma

2.2k total citations · 1 hit paper
35 papers, 1.9k citations indexed

About

Tso‐Ping Ma is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tso‐Ping Ma has authored 35 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tso‐Ping Ma's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Tso‐Ping Ma is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Tso‐Ping Ma collaborates with scholars based in United States, Japan and South Korea. Tso‐Ping Ma's co-authors include Nanbo Gong, Maruf Bhuiyan, Weihang Zhu, T. Tamagawa, Jae Hyun Kim, Yunxiang Di, Thomas Mueller, Shu‐Jen Han, Hao Jiang and Cheng Li and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Tso‐Ping Ma

35 papers receiving 1.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Black Phosphorus Mid-Infrared Photodetectors with High Gain

2016 668 citations Qiushi Guo, Andreas Pospischil et al. Nano Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Tso‐Ping Ma United States	14	1.6k	1.1k	227	196	175	35	1.9k
Matteo Barbone United Kingdom	13	922 0.6×	1.5k 1.3×	382 1.7×	154 0.8×	440 2.5×	24	1.8k
Laurens Janssen Netherlands	2	825 0.5×	1.3k 1.2×	325 1.4×	127 0.6×	549 3.1×	2	1.7k
Michael Waltl Austria	27	2.3k 1.4×	1.4k 1.3×	273 1.2×	126 0.6×	154 0.9×	128	2.8k
Nathan J. Conrad United States	9	1.2k 0.7×	1.4k 1.3×	235 1.0×	135 0.7×	128 0.7×	24	1.8k
Alexander Luce United States	9	828 0.5×	1.2k 1.1×	135 0.6×	103 0.5×	196 1.1×	16	1.4k
Jorge Quereda Spain	13	583 0.4×	1.2k 1.1×	218 1.0×	181 0.9×	202 1.2×	26	1.4k
Shula Chen China	22	875 0.6×	991 0.9×	350 1.5×	152 0.8×	428 2.4×	69	1.4k
Yu. Yu. Illarionov Austria	21	1.9k 1.2×	2.3k 2.1×	486 2.1×	236 1.2×	198 1.1×	71	3.0k
Martha I. Serna United States	8	873 0.6×	1.3k 1.2×	373 1.6×	151 0.8×	163 0.9×	9	1.6k
Chris M. Corbet United States	11	542 0.3×	1.1k 1.0×	200 0.9×	99 0.5×	306 1.7×	19	1.2k

Countries citing papers authored by Tso‐Ping Ma

Since Specialization

Citations

This map shows the geographic impact of Tso‐Ping Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tso‐Ping Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tso‐Ping Ma more than expected).

Fields of papers citing papers by Tso‐Ping Ma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tso‐Ping Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tso‐Ping Ma. The network helps show where Tso‐Ping Ma may publish in the future.

Co-authorship network of co-authors of Tso‐Ping Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Tso‐Ping Ma. A scholar is included among the top collaborators of Tso‐Ping Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tso‐Ping Ma. Tso‐Ping Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bhuiyan, Maruf, Hong Zhou, Rong Jiang, et al.. (2018). Charge Trapping in Al₂O₃/$\beta$ -Ga₂O₃-Based MOS Capacitors. IEEE Electron Device Letters. 39(7). 1022–1025. 51 indexed citations

Bhuiyan, Maruf, Hong Zhou, Sung‐Jae Chang, et al.. (2017). Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric. IEEE Transactions on Nuclear Science. 65(1). 46–52. 16 indexed citations

Gong, Nanbo & Tso‐Ping Ma. (2017). A Study of Endurance Issues in HfO₂-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation. IEEE Electron Device Letters. 39(1). 15–18. 205 indexed citations

Gong, Nanbo & Tso‐Ping Ma. (2016). Why Is FE–HfO₂More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective. IEEE Electron Device Letters. 37(9). 1123–1126. 198 indexed citations

Guo, Qiushi, Andreas Pospischil, Maruf Bhuiyan, et al.. (2016). Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Letters. 16(7). 4648–4655. 668 indexed citations breakdown →

Zhang, En Xia, Nicholas C. Hooten, Robert A. Reed, et al.. (2013). Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors. IEEE Transactions on Nuclear Science. 60(6). 4439–4445. 25 indexed citations

Kim, Kwang Ho, Jin‐Ping Han, Soon‐Won Jung, & Tso‐Ping Ma. (2002). Ferroelectric DRAM (FEDRAM) FET with metal/SrBi ₂ Ta ₂ O/sub 9//SiN/Si gate structure. IEEE Electron Device Letters. 23(2). 82–84. 50 indexed citations

Zhu, Weihang, Tso‐Ping Ma, T. Tamagawa, Jae Hyun Kim, & Yunxiang Di. (2002). Current transport in metal/hafnium oxide/silicon structure. IEEE Electron Device Letters. 23(2). 97–99. 243 indexed citations

She, Min, Tsu‐Jae King, Chenming Hu, et al.. (2002). Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride. 641–644. 2 indexed citations

10.

Lu, Qiang, Yee‐Chia Yeo, R. Lin, et al.. (2001). Two silicon nitride technologies for post-SiO₂ MOSFET gate dielectric. IEEE Electron Device Letters. 22(7). 324–326. 9 indexed citations

11.

Ma, Tso‐Ping, et al.. (1998). Tunneling spectroscopy of the silicon metal-oxide-semiconductor system. 261–265. 3 indexed citations

12.

Chen, Chun & Tso‐Ping Ma. (1998). Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's. IEEE Transactions on Electron Devices. 45(2). 512–520. 87 indexed citations

13.

Yoshino, Akira, Tso‐Ping Ma, & Koichiro Okumura. (1998). Front- and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates. Japanese Journal of Applied Physics. 37(7R). 3933–3933. 8 indexed citations

14.

HASEGAWA, Eiji, et al.. (1997). Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system. Applied Physics Letters. 71(17). 2523–2525. 28 indexed citations

15.

Zheng, Lirong, Chenglu Lin, & Tso‐Ping Ma. (1996). Current - voltage characteristic of asymmetric ferroelectric capacitors. Journal of Physics D Applied Physics. 29(2). 457–461. 25 indexed citations

16.

Ma, Tso‐Ping, et al.. (1994). The impact of device scaling on the current fluctuations in MOSFET's. IEEE Transactions on Electron Devices. 41(11). 2061–2068. 89 indexed citations

17.

Zhang, Bingnan, Akira Yoshino, & Tso‐Ping Ma. (1992). Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors. IEEE Electron Device Letters. 13(5). 282–284. 9 indexed citations

18.

Ma, Tso‐Ping, et al.. (1988). Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 920. 295–295. 1 indexed citations

19.

Chen, Tze-Chiang, et al.. (1984). <title>Properties And Applications Of Infrared Transparent And Electrically Conductive In2O3 Thin Film</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 430. 270–273. 3 indexed citations

20.

Chen, Tze-Chiang, Tso‐Ping Ma, & R. C. Barker. (1983). Infrared transparent and electrically conductive thin film of In2O3. Applied Physics Letters. 43(10). 901–903. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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