L. W. Massengill

12.1k total citations · 3 hit papers
325 papers, 9.4k citations indexed

About

L. W. Massengill is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Radiation. According to data from OpenAlex, L. W. Massengill has authored 325 papers receiving a total of 9.4k indexed citations (citations by other indexed papers that have themselves been cited), including 320 papers in Electrical and Electronic Engineering, 156 papers in Hardware and Architecture and 11 papers in Radiation. Recurrent topics in L. W. Massengill's work include Radiation Effects in Electronics (286 papers), VLSI and Analog Circuit Testing (152 papers) and Semiconductor materials and devices (142 papers). L. W. Massengill is often cited by papers focused on Radiation Effects in Electronics (286 papers), VLSI and Analog Circuit Testing (152 papers) and Semiconductor materials and devices (142 papers). L. W. Massengill collaborates with scholars based in United States, China and Canada. L. W. Massengill's co-authors include B. L. Bhuva, P.E. Dodd, Ronald D. Schrimpf, Michael L. Alles, W.T. Holman, Arthur F. Witulski, T. D. Loveless, Andrew L. Sternberg, Robert A. Reed and Oluwole A. Amusan and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

L. W. Massengill

318 papers receiving 9.0k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Basic mechanisms and modeling of single-event upset in digital microelectronics

2003 799 citations L. W. Massengill et al. IEEE Transactions on Nuclear Science profile →
Charge Collection and Charge Sharing in a 130 nm CMOS Technology

2006 327 citations L. W. Massengill, B. L. Bhuva et al. IEEE Transactions on Nuclear Science profile →
Single Event Transients in Digital CMOS—A Review

2013 287 citations L. W. Massengill et al. IEEE Transactions on Nuclear Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. W. Massengill United States	52	9.2k	4.3k	327	292	250	325	9.4k
S. Büchner United States	37	4.6k 0.5×	1.2k 0.3×	276 0.8×	115 0.4×	104 0.4×	227	4.9k
Kenneth A. LaBel United States	29	2.8k 0.3×	704 0.2×	324 1.0×	243 0.8×	180 0.7×	240	3.0k
B. L. Bhuva United States	42	6.0k 0.7×	3.1k 0.7×	102 0.3×	171 0.6×	69 0.3×	313	6.2k
Véronique Ferlet-Cavrois Netherlands	22	1.8k 0.2×	299 0.1×	171 0.5×	114 0.4×	119 0.5×	73	2.0k
F. Krummenacher Switzerland	23	2.3k 0.2×	115 0.0×	303 0.9×	182 0.6×	439 1.8×	136	2.7k
A. Geraci Italy	17	909 0.1×	97 0.0×	378 1.2×	176 0.6×	296 1.2×	173	1.5k
Brady Benware United States	21	992 0.1×	725 0.2×	123 0.4×	6 0.0×	276 1.1×	58	1.4k
Paul R. Gray United States	7	2.3k 0.3×	161 0.0×	17 0.1×	203 0.7×	36 0.1×	16	2.6k
Thomas H. Lee United States	24	3.8k 0.4×	252 0.1×	4 0.0×	312 1.1×	10 0.0×	106	4.4k
A. Neviani Italy	25	1.7k 0.2×	84 0.0×	178 0.5×	109 0.4×	235 0.9×	133	2.0k

Countries citing papers authored by L. W. Massengill

Since Specialization

Citations

This map shows the geographic impact of L. W. Massengill's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. W. Massengill with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. W. Massengill more than expected).

Fields of papers citing papers by L. W. Massengill

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. W. Massengill. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. W. Massengill. The network helps show where L. W. Massengill may publish in the future.

Co-authorship network of co-authors of L. W. Massengill

This figure shows the co-authorship network connecting the top 25 collaborators of L. W. Massengill. A scholar is included among the top collaborators of L. W. Massengill based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. W. Massengill. L. W. Massengill is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Dodds, Nathaniel A., Phil Oldiges, Keshab Sapkota, et al.. (2025). Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level. IEEE Transactions on Nuclear Science. 72(4). 1268–1275.

Haeffner, T. D., J. S. Kauppila, Michael L. Alles, et al.. (2025). Back-Biasing Strategy to Mitigate TID-Induced Threshold Voltage Shift in 22nm FDSOI Transistors. IEEE Transactions on Nuclear Science. 1–1.

Dodds, Nathaniel A., B. Dodd, Hugh Barnaby, et al.. (2025). The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology. IEEE Transactions on Nuclear Science. 72(8). 2317–2323.

Dodds, Nathaniel A., Phil Oldiges, B. Dodd, et al.. (2024). The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology. IEEE Transactions on Nuclear Science. 71(4). 477–484. 5 indexed citations

Haeffner, T. D., Dennis R. Ball, Andrew L. Sternberg, et al.. (2023). Analysis of Single-Event Upsets and Transients in 22 nm Fully Depleted Silicon-On-Insulator Logic. IEEE Transactions on Nuclear Science. 70(4). 387–393. 1 indexed citations

Ball, Dennis R., Jingchen Cao, Shi-Jie Wen, et al.. (2021). Single-Event Latchup in a 7-nm Bulk FinFET Technology. IEEE Transactions on Nuclear Science. 68(5). 830–834. 18 indexed citations

Wang, Pengfei, et al.. (2021). Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology. IEEE Transactions on Nuclear Science. 68(8). 1579–1584. 8 indexed citations

Zhang, En Xia, Dennis R. Ball, T. D. Haeffner, et al.. (2021). In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation. IEEE Transactions on Nuclear Science. 69(3). 367–373. 3 indexed citations

Loveless, T. D., et al.. (2021). Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES). IEEE Transactions on Nuclear Science. 68(8). 1600–1606. 17 indexed citations

10.

Ball, Dennis R., Jingchen Cao, Shi-Jie Wen, et al.. (2021). Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence. IEEE Transactions on Nuclear Science. 68(5). 823–829. 14 indexed citations

11.

Loveless, T. D., et al.. (2019). Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients. IEEE Transactions on Nuclear Science. 67(1). 99–107. 9 indexed citations

12.

Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2019). A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies. IEEE Transactions on Nuclear Science. 66(3). 635–642. 9 indexed citations

13.

Kauppila, J. S., T. D. Haeffner, En Xia Zhang, et al.. (2019). Exploiting SEU Data Analysis to Extract Fast SET Pulses. IEEE Transactions on Nuclear Science. 66(6). 932–937. 1 indexed citations

14.

Reising, Donald R., et al.. (2018). Ionizing Radiation Effects Spectroscopy for Analysis of Total-Ionizing Dose Degradation in RF Circuits. IEEE Transactions on Nuclear Science. 66(1). 61–68. 8 indexed citations

15.

Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2018). Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation. IEEE Transactions on Nuclear Science. 65(8). 1807–1813. 17 indexed citations

16.

Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2017). Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques. IEEE Transactions on Nuclear Science. 65(1). 362–368. 13 indexed citations

17.

Bhuva, B. L., et al.. (2017). Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology. IEEE Transactions on Nuclear Science. 65(1). 413–417. 10 indexed citations

18.

Ball, Dennis R., Michael L. Alles, J. S. Kauppila, et al.. (2017). The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops. IEEE Transactions on Nuclear Science. 65(1). 326–330. 21 indexed citations

19.

Kauppila, J. S., T. D. Haeffner, Dennis R. Ball, et al.. (2017). Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits. IEEE Transactions on Nuclear Science. 65(1). 486–494. 14 indexed citations

20.

Massengill, L. W., et al.. (2017). Single-Event Characterization of Common 1<formula> <tex>$^{\hbox{st}}$</tex> </formula> and 2<formula> <tex>$^{\hbox{nd}}$</tex> </formula>-order All-digital Phase-locked Loops (ADPLLs). IEEE Transactions on Nuclear Science. 1–1. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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