Peide D. Ye

24.9k citations

296 papers · 19.9k indexed · 9 hit papers · h-index 53

Impact in

Materials Chemistry top 0.1%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
Electrical and Electronic Engineering top 0.1%
- Perovskite Materials and Applications
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing

Papers in

Materials Chemistry 179
- 2D Materials and Applications 73
- ZnO doping and properties 41
- Graphene research and applications 39
- MXene and MAX Phase Materials 37
Electrical and Electronic Engineering 211
- Semiconductor materials and devices 138
- Advancements in Semiconductor Devices and Circuit Design 74
- Ferroelectric and Negative Capacitance Devices 55
- Thin-Film Transistor Technologies 43

Co-authors: Xianfan Xu Adam T. Neal Zhe Luo David Tománek Han Liu Zhen Zhu Mengwei Si Yuchen Du
Journals: IEEE Transactions on Electron Devices (36 papers)IEEE Electron Device Letters (26 papers)Nano Letters (21 papers)Applied Physics Letters (21 papers)ACS Nano (15 papers)
Partner nations: United States China South Korea

In The Last Decade

Peide D. Ye

288 papers receiving 19.5k citations

Hit Papers

9 papers align trajectories log scale

Scaled indium oxide transistors fabricated using atomic layer deposition 2022 · 206 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2022 Nature Electronics
2018 Nature Electronics
2017 Nature Nanotechnology
2015 Nature Communications
2014 ACS Nano
2014 ACS Nano
2014 Chemical Society Reviews
2012 ACS Nano
2007 Nature Nanotechnology

Peers

Countries citing papers authored by Peide D. Ye

Since Specialization

Citations

This map shows the geographic impact of Peide D. Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peide D. Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peide D. Ye more than expected).

Fields of papers citing papers by Peide D. Ye

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peide D. Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peide D. Ye. The network helps show where Peide D. Ye may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Peide D. Ye, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Peide D. Ye Line = papers co-authored together Peide D. Ye links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Quantum Geometry and the Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media Physical Review Letters ·Abigail Hassell, V.R. Velasco, Chang Niu, Peide D. Ye, Stefan Sexl, Aries Koes Sundoro, Marcus V. O. Moutinho, Caio Lewenkopf, 杜国禄	2025	0
2	Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors IEEE Transactions on Electron Devices ·Jie Zhang, Changjie Zhou, Hongyi Dou, Zhuocheng Zhang, Zehao Lin, Sagar S. Gulawani, X. Zhang, トシキヤマシタ, Huili Zhu, Weifeng Yang, Peide D. Ye	2025	1
3	Analytical Modeling of Short-Channel Effects in BEOL-Compatible Thin-Film Transistors IEEE Transactions on Electron Devices ·Simona Chadimová, Ujwal Radhakrishna, M Serrenti, Chang Niu, Martin Kehl, Gianluca Boselli, Luigi Colombo, Baher Haroun, Peide D. Ye, Leonard F. Register, Sanjay K. Banerjee	2025	2
4	Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO Sumi Lee, Chang Niu, Yizhi Zhang, トシキヤマシタ, Peide D. Ye	2024	3
5	Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Jie Zhang, Zehao Lin, Zhuocheng Zhang, Sagar S. Gulawani, Hongyi Dou, Bo Yang, Adam Charnas, Dongqi Zheng, X. Zhang, Haiyan Wang, Peide D. Ye	2023	30
6	Epitaxial Growth of Aurivillius Bi₃Fe₂Mn₂O_x Supercell Thin Films on Silicon Crystal Growth & Design ·Rubens Vieira, 脩治内藤, Pulak Sharma, Zihao He, Hongyi Dou, Yizhi Zhang, 周传芳, Dongqi Zheng, N. R. Dilley, Raktim Sarma, Aleem Siddiqui, Peide D. Ye, Haiyan Wang	2023	6
7	Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration IEEE Transactions on Electron Devices ·Pai-Ying Liao, Dongqi Zheng, 凌德芳, Zhuocheng Zhang, Mengwei Si, Jie Zhang, M Serrenti, Tatyana I. Feygelson, Marko J. Tadjer, Ali Shakouri, Peide D. Ye	2023	16
8	Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer IEEE Transactions on Electron Devices ·Jinhyun Noh, Prabudhya Roy Chowdhury, 狄梦洁, 凌德芳, Mengwei Si, Adam Charnas, Shouyuan Huang, Kerry Maize, Ali Shakouri, Xianfan Xu, Xiulin Ruan, Peide D. Ye	2022	17
9	ZnO–ferromagnetic metal vertically aligned nanocomposite thin films for magnetic, optical and acoustic metamaterials Nanoscale Advances ·脩治内藤, Pulak Sharma, Juanjuan Lu, Rubens Vieira, Nicholas A. Richter, Mengwei Si, 岡村美好, Peide D. Ye, Raktim Sarma, Aleem Siddiqui, Jijie Huang, X. Zhang, Haiyan Wang	2022	5
10	Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions Journal of Applied Physics ·Dongqi Zheng, Mengwei Si, Sou-Chi Chang, Nazila Haratipour, Zhizhong Chen, Adam Charnas, Shouyuan Huang, Kang Wang, Letian Dou, Xianfan Xu, Uygar E. Avci, Peide D. Ye	2022	10
11	A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current IEEE Electron Device Letters ·Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, A.C. Ross, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, 凌德芳, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye	2022	30
12	BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization IEEE Transactions on Electron Devices ·Mengwei Si, Felipe Gil-Castiñeira, Zehao Lin, Shaohan Feng, Junkang Li, Jinhyun Noh, 凌德芳, Chang Niu, Xiao Lyu, Dongqi Zheng, Kerry Maize, Ali Shakouri, Suman Datta, Rakesh Agrawal, Peide D. Ye	2021	26
13	Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Dongqi Zheng, Wonil Chung, Zhizhong Chen, Mengwei Si, อภิชน จีนเสวก, Peide D. Ye	2021	7
14	First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment IEEE Transactions on Electron Devices ·Jinhyun Noh, Hagyoul Bae, Junkang Li, Yandong Luo, Yiming Qu, Tae Joon Park, Mengwei Si, Xuegang Chen, Adam Charnas, Wonil Chung, Xiaochen Peng, Shriram Ramanathan, Shimeng Yu, Peide D. Ye	2021	27
15	The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors IEEE Journal of the Electron Devices Society ·Mengwei Si, Zehao Lin, Jinhyun Noh, Junkang Li, Wonil Chung, Peide D. Ye	2020	17
16	Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors Journal of Physics D Applied Physics ·P Jeyalakshmi, Midhat Salman, Adam Charnas, Peide D. Ye, Yu-Ming Lin, Chih‐I Wu, Chao‐Hsin Wu	2018	14
17	Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance nanoelectronics Nano Energy ·Yixiu Wang, Dongho Rie, Ruoxing Wang, Gang Qiu, Gaoda Li, Yong Qin, Peide D. Ye, Arman Sabbaghi, Wenzhuo Wu	2018	50
18	Full-field thermal imaging of quasiballistic crosstalk reduction in nanoscale devices Nature Communications ·Amirkoushyar Ziabari, Pol Torres, Bjorn Vermeersch, Yi Xuan, Xavier Cartoixà, Àlvar Torelló, Je‐Hyeong Bahk, Yee Rui Koh, Maryam Parsa, Peide D. Ye, F. X. Álvarez, Ali Shakouri	2018	61
19	Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance Scientific Reports ·P Jeyalakshmi, Adam Charnas, Yu-Ming Lin, Peide D. Ye, Chih‐I Wu, Chao‐Hsin Wu	2017	15
20	Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric IEEE Transactions on Nuclear Science ·Maruf Bhuiyan, Hong Zhou, Sung‐Jae Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, Chul‐Ho Won, Jong‐Won Lim, Jung‐Hee Lee, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso‐Ping Ma	2017	16

About Peide D. Ye

Peide D. Ye is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 296 papers that have together received 19.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (138 papers), Advancements in Semiconductor Devices and Circuit Design (74 papers), 2D Materials and Applications (73 papers), Ferroelectric and Negative Capacitance Devices (55 papers), Thin-Film Transistor Technologies (43 papers), ZnO doping and properties (41 papers), Graphene research and applications (39 papers) and MXene and MAX Phase Materials (37 papers). The work is most often cited by research in Materials Chemistry (15.8k citations), Electrical and Electronic Engineering (11.1k citations), Electronic, Optical and Magnetic Materials (1.9k citations), Renewable Energy, Sustainability and the Environment (1.4k citations) and Atomic and Molecular Physics, and Optics (2.1k citations). Peide D. Ye has collaborated with scholars based in United States, China and South Korea. Frequent co-authors include Xianfan Xu, Adam T. Neal, Zhe Luo, David Tománek, Han Liu, Zhen Zhu, Han Liu, Mengwei Si, Yuchen Du and Yexin Deng. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Nano Letters, Applied Physics Letters and ACS Nano.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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