R.L. Pease
About
In The Last Decade
R.L. Pease
120 papers receiving 3.9k citations
Peers
Comparison fields: 5 of 54
- Electrical and Electronic Engineering 4.2k
- Hardware and Architecture 330
- Materials Chemistry 304
- Radiation 216
- Automotive Engineering 142
Countries citing papers authored by R.L. Pease
This map shows the geographic impact of R.L. Pease's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.L. Pease with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.L. Pease more than expected).
Fields of papers citing papers by R.L. Pease
This network shows the impact of papers produced by R.L. Pease. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.L. Pease. The network helps show where R.L. Pease may publish in the future.
Co-authorship network of co-authors of R.L. Pease
This figure shows the co-authorship network connecting the top 25 collaborators of R.L. Pease. A scholar is included among the top collaborators of R.L. Pease based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.L. Pease. R.L. Pease is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 16 | |
| 3 | 125 | |
| 4 | 26 | |
| 5 | 9 | |
| 6 | Developing passivation layers for reducing enhanced low-dose-rate sensitivity in linear bipolar devices. | 1 |
| 7 | 24 | |
| 8 | 19 | |
| 9 | 21 | |
| 10 | 58 | |
| 11 | 17 | |
| 12 | 1 | |
| 13 | 86 | |
| 14 | 51 | |
| 15 | (Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide | 11 |
| 16 | 6 | |
| 17 | 26 | |
| 18 | 10 | |
| 19 | Subthreshold Technique for Fixed and Interface Trapped Charge Separation in Irradiated MOSFETs | 6 |
| 20 | 6 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.