Robert Kaplar

4.6k total citations
151 papers, 2.4k citations indexed

About

Robert Kaplar is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Robert Kaplar has authored 151 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 136 papers in Electrical and Electronic Engineering, 100 papers in Condensed Matter Physics and 38 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Robert Kaplar's work include GaN-based semiconductor devices and materials (100 papers), Silicon Carbide Semiconductor Technologies (84 papers) and Semiconductor materials and devices (84 papers). Robert Kaplar is often cited by papers focused on GaN-based semiconductor devices and materials (100 papers), Silicon Carbide Semiconductor Technologies (84 papers) and Semiconductor materials and devices (84 papers). Robert Kaplar collaborates with scholars based in United States, Japan and Germany. Robert Kaplar's co-authors include Andrew A. Allerman, Andrew Armstrong, Albert G. Baca, E Douglas, Jeramy Ray Dickerson, S. R. Kurtz, Mary H. Crawford, Michael E. Coltrin, A. J. Fischer and Matthew Marinella and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Robert Kaplar

139 papers receiving 2.3k citations

Peers

Countries citing papers authored by Robert Kaplar

Since Specialization

Citations

This map shows the geographic impact of Robert Kaplar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert Kaplar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert Kaplar more than expected).

Fields of papers citing papers by Robert Kaplar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert Kaplar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert Kaplar. The network helps show where Robert Kaplar may publish in the future.

Co-authorship network of co-authors of Robert Kaplar

This figure shows the co-authorship network connecting the top 25 collaborators of Robert Kaplar. A scholar is included among the top collaborators of Robert Kaplar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robert Kaplar. Robert Kaplar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes 2025 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), James R. McBride, (unknown), (unknown), (unknown), Travis J. Anderson, (unknown), Robert Kaplar, Michael W. McCurdy, Robert A. Reed, Sokrates T. Pantelides, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	2
2	Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design 2024 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Michael W. McCurdy, Travis J. Anderson, Alan G. Jacobs, Robert Kaplar, Dennis R. Ball, En Xia Zhang, Sokrates T. Pantelides, Robert A. Reed, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	8
3	Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN 2024 ·physica status solidi (a) ·Alan G. Jacobs, Boris N. Feigelson, James Spencer Lundh, Joseph Spencer, Jaime A. Freitas, Brendan Gunning, Robert Kaplar, Yuhao Zhang, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson	1
4	Impact of External Gate Resistance on Dynamic ON-Resistance Behavior in GaN HEMTs Using Multiple Pulse Test 2024 ·(unknown), (unknown), (unknown), Sandeepan DasGupta, Robert Kaplar, Alan J. Michaels	0
5	High current density 1.2 kV class HfO₂-gated vertical GaN trench MOSFETs 2024 ·Applied Physics Express ·Andrew Binder, (unknown), Kevin J. Reilly, (unknown), (unknown), (unknown), Andrew A. Allerman, Robert Kaplar	4
6	Improving vertical GaN p–n diode performance with room temperature defect mitigation 2023 ·Semiconductor Science and Technology ·(unknown), James C. Gallagher, Alan G. Jacobs, Karl D. Hobart, Travis J. Anderson, Brendan Gunning, Robert Kaplar, Douglas E. Wolfe, Aman Haque	1
7	Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources 2023 ·IEEE Journal of Emerging and Selected Topics in Power Electronics ·Sudip K. Mazumder, Lars F. Voss, Karen M. Dowling, Adam Conway, David L. Hall, Robert Kaplar, Gregory Pickrell, Jack Flicker, Andrew Binder, Srabanti Chowdhury, Victor Veliadis, Fang Luo, (unknown), Thomas Aichinger, S.R. Bahl, Matteo Meneghini, (unknown)	35
8	Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes 2023 ·Applied Physics Express ·Mona A. Ebrish, Matthew Porter, Alan G. Jacobs, James C. Gallagher, Robert Kaplar, Brendan Gunning, Karl D. Hobart, Travis J. Anderson	2
9	Co-optimization Design and Analysis of WBG and UWBG Power Diodes with Operational Regimes 2023 ·(unknown), (unknown), Jack Flicker, Stephen M. Goodnick, Robert Kaplar, Alan J. Michaels	2
10	A Simple Edge Termination Design for Vertical GaN P-N Diodes 2022 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan G. Jacobs, Mona A. Ebrish, Brendan Gunning, Robert Kaplar, Karl D. Hobart, Raghav Khanna	17
11	Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy 2022 ·Applied Physics Letters ·Sandeepan DasGupta, (unknown), Thomas G. Smith, Andrew Binder, Jack Flicker, Robert Kaplar, Jacob Mueller, (unknown), Stanley Atcitty	7
12	Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions 2022 ·IEEE Transactions on Electron Devices ·Luke Yates, Brendan Gunning, Mary H. Crawford, (unknown), Michael L. Smith, (unknown), Jeramy Ray Dickerson, Andrew Armstrong, Andrew Binder, Andrew A. Allerman, Robert Kaplar	44
13	Analysis of the dependence of critical electric field on semiconductor bandgap 2022 ·Journal of materials research/Pratt's guide to venture capital sources ·(unknown), Jack Flicker, Jeramy Ray Dickerson, (unknown), Andrew Binder, (unknown), Stephen M. Goodnick, Robert Kaplar, M.A. Hollis	52
14	Investigating Lock On in Gallium Nitride Photoconductive Solid State Switches. 2021 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Jane Lehr, (unknown), (unknown), Richard Gallegos, Harold P. Hjalmarson, Robert Kaplar, A. Már, (unknown), Gregory Pickrell	1
15	A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes 2020 ·IEEE Transactions on Semiconductor Manufacturing ·Mona A. Ebrish, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, James C. Gallagher, Robert Kaplar, Brendan Gunning, Karl D. Hobart	5
16	Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor 2019 ·Applied Physics Letters ·James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew Armstrong, Brianna Klein, Anushka Bansal, (unknown), Alexej Pogrebnyakov, Eric R. Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi	37
17	High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules 2019 ·Scientific Reports ·(unknown), (unknown), Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Ding Ding, Alan Mantooth, Shui-Qing Yu, Zhong Chen	18
18	Bevel Edge Termination for Vertical GaN Power Diodes 2019 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Andrew Binder, Jeramy Ray Dickerson, Mary H. Crawford, (unknown), Andrew A. Allerman, Paul Sharps, Robert Kaplar	10
19	Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications 2018 ·IEEE Journal of Emerging and Selected Topics in Power Electronics ·(unknown), (unknown), Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Ding Ding, H. Alan Mantooth, Shui-Qing Yu, Zhong Chen	7
20	Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes 2016 ·Applied Physics Letters ·M. King, Robert Kaplar, Jeramy Ray Dickerson, S. R. Lee, Andrew A. Allerman, Mary H. Crawford, A. J. Fischer, (unknown), Jack Flicker, R. M. Fleming, I.C. Kizilyalli, Özgür Aktaş, Andrew Armstrong	11

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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