L.C. Riewe

1.8k total citations · 1 hit paper
24 papers, 1.4k citations indexed

About

L.C. Riewe is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Materials Chemistry. According to data from OpenAlex, L.C. Riewe has authored 24 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 1 paper in Hardware and Architecture and 1 paper in Materials Chemistry. Recurrent topics in L.C. Riewe's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Radiation Effects in Electronics (14 papers). L.C. Riewe is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Radiation Effects in Electronics (14 papers). L.C. Riewe collaborates with scholars based in United States and France. L.C. Riewe's co-authors include Daniel M. Fleetwood, P.S. Winokur, M.R. Shaneyfelt, J.R. Schwank, R.A. Reber, T.L. Meisenheimer, S.C. Witczak, R.L. Pease, Ronald D. Schrimpf and W. L. Warren and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Nuclear Science and Microelectronics Reliability.

In The Last Decade

L.C. Riewe

24 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

1993 393 citations Daniel M. Fleetwood, P.S. Winokur et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L.C. Riewe United States	16	1.4k	160	90	58	35	24	1.4k
R.A. Reber United States	11	1.0k 0.7×	152 0.9×	86 1.0×	27 0.5×	41 1.2×	15	1.1k
D. C. Turpin United States	8	1.1k 0.8×	100 0.6×	88 1.0×	34 0.6×	15 0.4×	8	1.1k
T. Kaga Japan	12	529 0.4×	118 0.7×	63 0.7×	12 0.2×	38 1.1×	29	601
A. Murthy United States	12	1.5k 1.1×	191 1.2×	204 2.3×	26 0.4×	18 0.5×	13	1.6k
T.C. Holloway United States	13	523 0.4×	104 0.7×	190 2.1×	12 0.2×	26 0.7×	29	612
K.P. MacWilliams United States	11	608 0.4×	100 0.6×	138 1.5×	17 0.3×	42 1.2×	36	658
J. Aitken United States	17	1.0k 0.8×	260 1.6×	122 1.4×	18 0.3×	236 6.7×	36	1.1k
Pauline Paki United States	12	306 0.2×	87 0.5×	223 2.5×	24 0.4×	12 0.3×	31	464
Akio Shima Japan	15	715 0.5×	103 0.6×	109 1.2×	9 0.2×	34 1.0×	92	763
Manish Chandhok United States	16	597 0.4×	77 0.5×	55 0.6×	18 0.3×	35 1.0×	51	666

Countries citing papers authored by L.C. Riewe

Since Specialization

Citations

This map shows the geographic impact of L.C. Riewe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.C. Riewe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.C. Riewe more than expected).

Fields of papers citing papers by L.C. Riewe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.C. Riewe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.C. Riewe. The network helps show where L.C. Riewe may publish in the future.

Co-authorship network of co-authors of L.C. Riewe

This figure shows the co-authorship network connecting the top 25 collaborators of L.C. Riewe. A scholar is included among the top collaborators of L.C. Riewe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.C. Riewe. L.C. Riewe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Dodd, P.E., L.C. Riewe, R.L. Pease, et al.. (2003). Developing passivation layers for reducing enhanced low-dose-rate sensitivity in linear bipolar devices.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

Simons, M., R.L. Pease, Daniel M. Fleetwood, et al.. (2002). Common-source TLD and RADFET characterization of Co-60, Cs-137, and X-ray irradiation sources [bipolar linear ICs]. 28–34. 3 indexed citations

Shaneyfelt, M.R., R.L. Pease, J.R. Schwank, et al.. (2002). Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs. IEEE Transactions on Nuclear Science. 49(6). 3171–3179. 68 indexed citations

Félix, J., Daniel M. Fleetwood, L.C. Riewe, M.R. Shaneyfelt, & P.S. Winokur. (2001). Bias and frequency dependence of radiation-induced-charge trapping in MOS devices. IEEE Transactions on Nuclear Science. 48(6). 2114–2120. 6 indexed citations

Shaneyfelt, M.R., James R. Schwank, S.C. Witczak, et al.. (2000). Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits. University of North Texas Digital Library (University of North Texas). 5 indexed citations

Schwank, J.R., M.R. Shaneyfelt, P.E. Dodd, et al.. (2000). Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides. IEEE Transactions on Nuclear Science. 47(6). 2175–2182. 51 indexed citations

Shaneyfelt, M.R., S.C. Witczak, Daniel M. Fleetwood, et al.. (2000). Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs. IEEE Transactions on Nuclear Science. 47(6). 2539–2545. 70 indexed citations

Fleetwood, Daniel M., P.S. Winokur, L.C. Riewe, et al.. (1999). The role of electron transport and trapping in MOS total-dose modeling. IEEE Transactions on Nuclear Science. 46(6). 1519–1525. 25 indexed citations

Fleetwood, Daniel M., R.A. Reber, L.C. Riewe, & P.S. Winokur. (1999). Thermally stimulated current in SiO2. Microelectronics Reliability. 39(9). 1323–1336. 15 indexed citations

10.

Fleetwood, Daniel M., P.S. Winokur, L.C. Riewe, & R.A. Reber. (1998). Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors. Journal of Applied Physics. 84(11). 6141–6148. 33 indexed citations

11.

Fleetwood, Daniel M., P.S. Winokur, M.R. Shaneyfelt, et al.. (1998). Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices. University of North Texas Digital Library (University of North Texas). 1 indexed citations

12.

Fleetwood, Daniel M., P.S. Winokur, M.R. Shaneyfelt, et al.. (1998). Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge. IEEE Transactions on Nuclear Science. 45(6). 2366–2374. 44 indexed citations

13.

Fleetwood, Daniel M., L.C. Riewe, J.R. Schwank, S.C. Witczak, & Ronald D. Schrimpf. (1996). Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides. IEEE Transactions on Nuclear Science. 43(6). 2537–2546. 143 indexed citations

14.

Fleetwood, Daniel M., W. L. Warren, J.R. Schwank, et al.. (1995). Effects of interface traps and border traps on MOS postirradiation annealing response. IEEE Transactions on Nuclear Science. 42(6). 1698–1707. 104 indexed citations

15.

Fleetwood, Daniel M., P.S. Winokur, R.A. Reber, et al.. (1993). Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices. Journal of Applied Physics. 73(10). 5058–5074. 393 indexed citations breakdown →

16.

Fleetwood, Daniel M., M.R. Shaneyfelt, L.C. Riewe, P.S. Winokur, & R.A. Reber. (1993). The role of border traps in MOS high-temperature postirradiation annealing response. IEEE Transactions on Nuclear Science. 40(6). 1323–1334. 70 indexed citations

17.

Schwank, J.R., Daniel M. Fleetwood, M.R. Shaneyfelt, et al.. (1992). Latent interface-trap buildup and its implications for hardness assurance (MOS transistors). IEEE Transactions on Nuclear Science. 39(6). 1953–1963. 78 indexed citations

18.

Axness, Carl L., et al.. (1991). Radiation characteristics of SIPOS and polysilicon resistors. IEEE Transactions on Nuclear Science. 38(6). 1365–1369. 11 indexed citations

19.

Meisenheimer, T.L., Daniel M. Fleetwood, M.R. Shaneyfelt, & L.C. Riewe. (1991). 1/f noise in n- and p-channel MOS devices through irradiation and annealing. IEEE Transactions on Nuclear Science. 38(6). 1297–1303. 69 indexed citations

20.

Fleetwood, Daniel M., P.S. Winokur, & L.C. Riewe. (1990). Predicting switched-bias response from steady-state irradiations MOS transistors. IEEE Transactions on Nuclear Science. 37(6). 1806–1817. 62 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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