Masayoshi Kosaki

490 total citations
28 papers, 401 citations indexed

About

Masayoshi Kosaki is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Masayoshi Kosaki has authored 28 papers receiving a total of 401 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 15 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Masayoshi Kosaki's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (9 papers). Masayoshi Kosaki is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (9 papers). Masayoshi Kosaki collaborates with scholars based in Japan, United States and South Korea. Masayoshi Kosaki's co-authors include Koji Hirata, Shugo Nitta, Yuji Ando, Hiroshi Amano, Tatsuo Nakayama, Isamu Akasaki, Shigeo Yamaguchi, Naoki Shibata, Yasuhiro Okamoto and Masaaki Kuzuhara and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Masayoshi Kosaki

27 papers receiving 369 citations

Peers

Countries citing papers authored by Masayoshi Kosaki

Since Specialization

Citations

This map shows the geographic impact of Masayoshi Kosaki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masayoshi Kosaki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masayoshi Kosaki more than expected).

Fields of papers citing papers by Masayoshi Kosaki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masayoshi Kosaki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masayoshi Kosaki. The network helps show where Masayoshi Kosaki may publish in the future.

Co-authorship network of co-authors of Masayoshi Kosaki

This figure shows the co-authorship network connecting the top 25 collaborators of Masayoshi Kosaki. A scholar is included among the top collaborators of Masayoshi Kosaki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masayoshi Kosaki. Masayoshi Kosaki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions 2023 ·Applied Physics Letters ·Tetsuo Narita, Masakazu Kanechika, Kazuyoshi Tomita, (unknown), Takeshi Kondo, Tsutomu Uesugi, (unknown), Masayoshi Kosaki, Tohru OKA, Jun Suda	4
2	Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited) 2023 ·Tetsuo Narita, Daigo Kikuta, (unknown), T. Shoji, Tomohiko Mori, S. Yamaguchi, (unknown), Kazuyoshi Tomita, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Jun Kojima, Jun Suda, (unknown), (unknown), H. Watanabe, Masayoshi Kosaki, Tohru OKA	2
3	Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress 2022 ·Scientific Reports ·Tetsuo Narita, Masakazu Kanechika, Jun Kojima, H. Watanabe, Takeshi Kondo, Tsutomu Uesugi, S. Yamaguchi, (unknown), Kazuyoshi Tomita, (unknown), (unknown), Masayoshi Kosaki, Tohru OKA, Jun Suda	21
4	Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress 2021 ·Applied Physics Letters ·Tetsuo Narita, (unknown), Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, (unknown), S. Yamaguchi, (unknown), Masayoshi Kosaki, Tohru OKA, Jun Kojima, Jun Suda	17
5	Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs 2008 ·IEEE Transactions on Electron Devices ·(unknown), Tatsuo Nakayama, Yuji Ando, Masayoshi Kosaki, Hiroshi Miwa, Koji Hirata, Toshiya Uemura, (unknown)	29
6	Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET 2007 ·Materials science forum ·(unknown), Tomohisa Kato, Kazutoshi Kojima, (unknown), Koji Hirata, Masayoshi Kosaki, Moto Kinoshita, Takeshi Mitani, Shin-ichi Nakashima, Hajime Okumura	1
7	Evaluation of AlGaN/GaN‐HFET with HfAlO gate insulator 2007 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Koji Hirata, Masayoshi Kosaki, Naoki Shibata, (unknown), Shuichi Yagi, Yasunori Tanaka, Akimasa Kinoshita, Mitsuaki Shimizu, Hajime Okumura	4
8	Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Takeshi Mitani, (unknown), Koji Hirata, Masayoshi Kosaki, (unknown), Taku Tsuchiya, K. Hikosaka, S. Nakashima, Hajime Okumura	1
9	High power AlGaN/GaN heterojunction FETs for base station applications 2004 ·Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takafumi Inoue, (unknown), Hiroyuki Miyamoto, (unknown), Koji Hirata, Masayoshi Kosaki, Naoki Shibata, Masaaki Kuzuhara	1
10	Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy 2002 ·physica status solidi (a) ·S. Yamaguchi, (unknown), Yoichi Watanabe, Masayoshi Kosaki, (unknown), Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki	2
11	Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 2002 ·Journal of Crystal Growth ·S. Yamaguchi, (unknown), Yoichi Watanabe, Masayoshi Kosaki, (unknown), Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki	5
12	In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 2002 ·Materials Science and Engineering B ·Shugo Nitta, (unknown), Yasuhiro Watanabe, Masayoshi Kosaki, Motoaki Iwaya, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki	8
13	MOVPE growth and characterization of Al1−xInxN/GaN multiple layers 2002 ·Journal of Crystal Growth ·Masayoshi Kosaki, (unknown), Tetsuya Nakamura, Yasuhiro Watanabe, (unknown), Shugo Nitta, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki	1
14	Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 2002 ·Applied Physics Letters ·Shigeo Yamaguchi, (unknown), Yasuhiro Watanabe, Masayoshi Kosaki, (unknown), Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki	17
15	Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN 2001 ·Japanese Journal of Applied Physics ·Masayoshi Kosaki, (unknown), Tetsuya Nakamura, (unknown), Shugo Nitta, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki	6
16	Control of strain in GaN using an In doping-induced hardening effect 2001 ·Physical review. B, Condensed matter ·Shigeo Yamaguchi, Michihiko Kariya, Takayuki Kashima, Shugo Nitta, Masayoshi Kosaki, (unknown), Hiroshi Amano, Isamu Akasaki	25
17	Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor 2001 ·physica status solidi (a) ·S. Yamaguchi, Masayoshi Kosaki, Yoichi Watanabe, (unknown), Tetsuya Nakamura, (unknown), Shugo Nitta, Hiroshi Amano, Isamu Akasaki	13
18	Control of strain in GaN by a combination of H2 and N2 carrier gases 2001 ·Journal of Applied Physics ·Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, (unknown), Shugo Nitta, Hiroshi Amano, Isamu Akasaki	19
19	Effect on GaN/Al_0.17Ga_0.83N and Al_0.05Ga_0.95N/Al_0.17Ga_0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy 2000 ·Japanese Journal of Applied Physics ·Michihiko Kariya, Shugo Nitta, Masayoshi Kosaki, (unknown), Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki Isamu Akasaki	8
20	An experimental study on the burst strength of fuel cladding tubes under loss of coolant accident conditions in water cooled power reactors 1965 ·(unknown), (unknown), Kenji Ono, Hiroshi Tanaka, (unknown), Masayoshi Kosaki, (unknown), (unknown), (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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