Masayoshi Kosaki

490 citations

28 papers · 401 indexed · h-index 11

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 25
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 12
Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies 9
- Semiconductor materials and devices 9
- Radio Frequency Integrated Circuit Design 3
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 4
Materials Chemistry
- ZnO doping and properties 9
Mechanics of Materials
- Metal and Thin Film Mechanics 3

Co-authors: Koji Hirata Shugo Nitta Yuji Ando Hiroshi Amano Tatsuo Nakayama Isamu Akasaki Shigeo Yamaguchi Naoki Shibata
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Physical review. B, Condensed matter (1 paper)Applied Physics Letters (4 papers)Journal of Applied Physics (3 papers)
Partner nations: Japan United States South Korea

In The Last Decade

Masayoshi Kosaki

27 papers receiving 369 citations

Peers

Countries citing papers authored by Masayoshi Kosaki

Since Specialization

Citations

This map shows the geographic impact of Masayoshi Kosaki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masayoshi Kosaki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masayoshi Kosaki more than expected).

Fields of papers citing papers by Masayoshi Kosaki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masayoshi Kosaki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masayoshi Kosaki. The network helps show where Masayoshi Kosaki may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Masayoshi Kosaki, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Masayoshi Kosaki Line = papers co-authored together Masayoshi Kosaki links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions Applied Physics Letters ·Tetsuo Narita,Masakazu Kanechika,Kazuyoshi Tomita,Yoshitaka Nagasato,Takeshi Kondo,Tsutomu Uesugi,Satoshi Ikeda,Masayoshi Kosaki,Tohru OKA,Jun Suda	2023	4
2	Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited) Tetsuo Narita,Daigo Kikuta,Kenji Ito,T. Shoji,Tomohiko Mori,S. Yamaguchi,Yasuji Kimoto,Kazuyoshi Tomita,Masakazu Kanechika,Takeshi Kondo,Tsutomu Uesugi,Jun Kojima,Jun Suda,Yoshitaka Nagasato,Satoshi Ikeda,H. Watanabe,Masayoshi Kosaki,Tohru OKA	2023	2
3	Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress Scientific Reports ·Tetsuo Narita,Masakazu Kanechika,Jun Kojima,H. Watanabe,Takeshi Kondo,Tsutomu Uesugi,S. Yamaguchi,Yasuji Kimoto,Kazuyoshi Tomita,Yoshitaka Nagasato,Satoshi Ikeda,Masayoshi Kosaki,Tohru OKA,Jun Suda	2022	21
4	Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress Applied Physics Letters ·Tetsuo Narita,Yoshitaka Nagasato,Masakazu Kanechika,Takeshi Kondo,Tsutomu Uesugi,Kazuyoshi Tomita,Satoshi Ikeda,S. Yamaguchi,Yasuji Kimoto,Masayoshi Kosaki,Tohru OKA,Jun Kojima,Jun Suda	2021	17
5	Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs IEEE Transactions on Electron Devices ·Takashi Inoue,Tatsuo Nakayama,Yuji Ando,Masayoshi Kosaki,Hiroshi Miwa,Koji Hirata,Toshiya Uemura,Hironobu Miyamoto	2008	29
6	Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET Materials science forum ·Hiroyuki Sazawa,Tomohisa Kato,Kazutoshi Kojima,K. Furuta,Koji Hirata,Masayoshi Kosaki,Moto Kinoshita,Takeshi Mitani,Shin-ichi Nakashima,Hajime Okumura	2007	1
7	Evaluation of AlGaN/GaN‐HFET with HfAlO gate insulator Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Hiroyuki Sazawa,Koji Hirata,Masayoshi Kosaki,Naoki Shibata,K. Furuta,Shuichi Yagi,Yasunori Tanaka,Akimasa Kinoshita,Mitsuaki Shimizu,Hajime Okumura	2007	4
8	Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Hiroyuki Sazawa,Takeshi Mitani,H. Bang,Koji Hirata,Masayoshi Kosaki,K. Furuta,Taku Tsuchiya,K. Hikosaka,S. Nakashima,Hajime Okumura	2006	1
9	High power AlGaN/GaN heterojunction FETs for base station applications Yuji Ando,Yasuhiro Okamoto,Tatsuo Nakayama,Takafumi Inoue,K. Hataya,Hiroyuki Miyamoto,M. Senda,Koji Hirata,Masayoshi Kosaki,Naoki Shibata,Masaaki Kuzuhara	2004	1
10	Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy physica status solidi (a) ·S. Yamaguchi,Yasuo Iwamura,Yoichi Watanabe,Masayoshi Kosaki,Y. Yukawa,Shugo Nitta,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki	2002	2
11	Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Journal of Crystal Growth ·S. Yamaguchi,Yasuo Iwamura,Yoichi Watanabe,Masayoshi Kosaki,Y. Yukawa,Shugo Nitta,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki	2002	5
12	In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Materials Science and Engineering B ·Shugo Nitta,Yohei Yukawa,Yasuhiro Watanabe,Masayoshi Kosaki,Motoaki Iwaya,Shigeo Yamaguchi,Hiroshi Amano,Isamu Akasaki	2002	8
13	MOVPE growth and characterization of Al1−xInxN/GaN multiple layers Journal of Crystal Growth ·Masayoshi Kosaki,Shingo Mochizuki,Tetsuya Nakamura,Yasuhiro Watanabe,Yohei Yukawa,Shugo Nitta,Shigeo Yamaguchi,Hiroshi Amano,Isamu Akasaki	2002	1
14	Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters ·Shigeo Yamaguchi,Yasuo Iwamura,Yasuhiro Watanabe,Masayoshi Kosaki,Yohei Yukawa,Shugo Nitta,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki	2002	17
15	Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN Japanese Journal of Applied Physics ·Masayoshi Kosaki,Shingo Mochizuki,Tetsuya Nakamura,Yohei Yukawa,Shugo Nitta,Shigeo Yamaguchi,Hiroshi Amano,Isamu Akasaki	2001	6
16	Control of strain in GaN using an In doping-induced hardening effect Physical review. B, Condensed matter ·Shigeo Yamaguchi,Michihiko Kariya,Takayuki Kashima,Shugo Nitta,Masayoshi Kosaki,Yohei Yukawa,Hiroshi Amano,Isamu Akasaki	2001	25
17	Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor physica status solidi (a) ·S. Yamaguchi,Masayoshi Kosaki,Yoichi Watanabe,Shingo Mochizuki,Tetsuya Nakamura,Y. Yukawa,Shugo Nitta,Hiroshi Amano,Isamu Akasaki	2001	13
18	Control of strain in GaN by a combination of H2 and N2 carrier gases Journal of Applied Physics ·Shigeo Yamaguchi,Michihiko Kariya,Masayoshi Kosaki,Yohei Yukawa,Shugo Nitta,Hiroshi Amano,Isamu Akasaki	2001	19
19	Effect on GaN/Al_0.17Ga_0.83N and Al_0.05Ga_0.95N/Al_0.17Ga_0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics ·Michihiko Kariya,Shugo Nitta,Masayoshi Kosaki,Yohei Yukawa,Shigeo Yamaguchi,Hiroshi Amano,Isamu Akasaki Isamu Akasaki	2000	8
20	An experimental study on the burst strength of fuel cladding tubes under loss of coolant accident conditions in water cooled power reactors Y. Mishima,Itsumi KATSURA,Kenji Ono,Hiroshi Tanaka,Seiichi WAKISAKA,Masayoshi Kosaki,Z. Takao,Mamoru TOYODA,M. Yokosuka	1965	3

About Masayoshi Kosaki

Masayoshi Kosaki is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 28 papers that have together received 401 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (12 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (9 papers), ZnO doping and properties (9 papers), Semiconductor Quantum Structures and Devices (4 papers), Radio Frequency Integrated Circuit Design (3 papers) and Metal and Thin Film Mechanics (3 papers). The work is most often cited by research in Condensed Matter Physics (375 citations), Electronic, Optical and Magnetic Materials (173 citations) and Electrical and Electronic Engineering (233 citations). Masayoshi Kosaki has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Koji Hirata, Shugo Nitta, Yuji Ando, Hiroshi Amano, Tatsuo Nakayama, Isamu Akasaki, Shigeo Yamaguchi, Naoki Shibata, Yasuhiro Okamoto and Masaaki Kuzuhara. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

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