Anna Malmros

571 citations

19 papers · 453 indexed · h-index 13

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 15
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 6
Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 7
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 6
Mechanics of Materials
- Metal and Thin Film Mechanics 6
Biomedical Engineering
- Acoustic Wave Resonator Technologies 3
Materials Chemistry
- ZnO doping and properties 3
Astronomy and Astrophysics
- Superconducting and THz Device Technology 2

Co-authors: Niklas Rorsman H. Blanck Mattias Thorsell Herbert Zirath Hans Hjelmgren C. Lacam Piero Gamarra Johan Bergsten
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (4 papers)Semiconductor Science and Technology (3 papers)
Partner nations: Sweden France

In The Last Decade

Anna Malmros

18 papers receiving 434 citations

Peers

Countries citing papers authored by Anna Malmros

Since Specialization

Citations

This map shows the geographic impact of Anna Malmros's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anna Malmros with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anna Malmros more than expected).

Fields of papers citing papers by Anna Malmros

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anna Malmros. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anna Malmros. The network helps show where Anna Malmros may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Anna Malmros, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Anna Malmros Line = papers co-authored together Anna Malmros links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

#	Work
1	Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices ·Camilo Andrés Benítez Peláez,Johan Bergsten,木下郁夫,Vanya Darakchieva,Anna Malmros,Hans Hjelmgren,Mattias Thorsell,Niklas Rorsman	2024	0
2	Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors IEEE Electron Device Letters ·Ding-Yuan Chen,Anna Malmros,Mattias Thorsell,Hans Hjelmgren,Olof Kordina,Jr‐Tai Chen,Niklas Rorsman	2020	43
3	Advanced III-Nitride Technology for mm-Wave Applications Chalmers Research (Chalmers University of Technology) ·Anna Malmros	2019	1
4	Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer IEEE Transactions on Electron Devices ·Anna Malmros,Jr‐Tai Chen,Hans Hjelmgren,Jun Lu,Lars Hultman,Olof Kordina,E.Ö. Sveinbjörnsson,Herbert Zirath,Niklas Rorsman	2019	12
5	Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier IEEE Transactions on Electron Devices ·Anna Malmros,Piero Gamarra,Mattias Thorsell,Hans Hjelmgren,C. Lacam,S.L. Delage,Herbert Zirath,Niklas Rorsman	2018	49
6	A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs Semiconductor Science and Technology ·Yen-Ku Lin,Johan Bergsten,Ana Arias,Anna Malmros,Alessio Lucarini,Ding-Yuan Chen,Olof Kordina,Herbert Zirath,Edward Yi Chang,Niklas Rorsman	2018	20
7	Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application 2015 Asia-Pacific Microwave Conference (APMC) ·Tongde Huang,Oktay Boztaş,Anna Malmros,Johan Bergsten,Sebastian Gustafsson,Mattias Thorsell,Niklas Rorsman	2015	2
8	Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN_x Grown by Low Pressure Chemical Vapor Deposition IEEE Electron Device Letters ·Tongde Huang,Anna Malmros,Johan Bergsten,Sebastian Gustafsson,Oktay Boztaş,Mattias Thorsell,Niklas Rorsman	2015	25
9	Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures Semiconductor Science and Technology ·Johan Bergsten,Anna Malmros,M. Tordjman,Piero Gamarra,C. Lacam,S Mandl-Kramer,Niklas Rorsman	2015	23
10	Evaluation of Thermal Versus Plasma-Assisted ALD Al<sub>2</sub>O<sub>3</sub> as Passivation for InAlN/AlN/GaN HEMTs IEEE Electron Device Letters ·Anna Malmros,Piero Gamarra,Xiaoqin Zhai,Hans Hjelmgren,C. Lacam,Mattias Thorsell,M. Tordjman,Rigo Vargas,Niklas Rorsman	2015	26
11	Effects of Surface Passivation and Deposition Methods on the 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors IEEE Electron Device Letters ·S. C. Brugger,Anna Malmros,Piero Gamarra,C. Lacam,Xiaoqin Zhai,M. Tordjman,Gerald M. Balaban,Rigo Vargas,Niklas Rorsman,Dan Kuylenstierna	2015	16
12	Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process IEEE Transactions on Electron Devices ·Johan Bergsten,Jr‐Tai Chen,Sebastian Gustafsson,Anna Malmros,Urban Forsberg,Mattias Thorsell,Erik Janzén,Niklas Rorsman	2015	18
13	Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Anna Malmros,Piero Gamarra,Mattias Thorsell,Xiaoqin Zhai,C. Lacam,M. Tordjman,Rigo Vargas,Herbert Zirath,Niklas Rorsman	2014	19
14	Cryogenic 0.5–13 GHz low noise amplifier with 3 K mid-band noise temperature Chalmers Research (Chalmers University of Technology) ·Joel Schleeh,Niklas Wadefalk,Kohei Nago,J.P. Starski,Aranka Hrušková,Juliusz Kowalczyk,B. Nilsson,Anna Malmros,Herbert Zirath,Jan Grahn	2012	3
15	Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz IEEE Electron Device Letters ·Joel Schleeh,Aranka Hrušková,Juliusz Kowalczyk,Anna Malmros,B. Nilsson,P. Anders Nilsson,J.P. Starski,Niklas Wadefalk,Herbert Zirath,Jan Grahn	2012	84
16	Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs Semiconductor Science and Technology ·Anna Malmros,H. Blanck,Niklas Rorsman	2011	81
17	Combined TiN- and TaN temperature compensated thin film resistors Thin Solid Films ·Anna Malmros,Kristoffer Andersson,Niklas Rorsman	2011	21
18	TiN thin film resistors for monolithic microwave integrated circuits Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Anna Malmros,Mattias Südow,Kristoffer Andersson,Niklas Rorsman	2010	8
19	InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance Jan Grahn,B. Warner,D B Lakings,Fangmao Guo,Anna Malmros,Shumin Wang,Melike Selcan Cihangiroglu,Herbert Zirath	2005	2

About Anna Malmros

Anna Malmros is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 19 papers that have together received 453 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Ga2O3 and related materials (6 papers), Metal and Thin Film Mechanics (6 papers), Acoustic Wave Resonator Technologies (3 papers), ZnO doping and properties (3 papers) and Superconducting and THz Device Technology (2 papers). The work is most often cited by research in Condensed Matter Physics (328 citations), Electronic, Optical and Magnetic Materials (135 citations), Electrical and Electronic Engineering (348 citations), Atomic and Molecular Physics, and Optics (153 citations) and Mechanics of Materials (59 citations). Anna Malmros has collaborated with scholars based in Sweden and France. Frequent co-authors include Niklas Rorsman, H. Blanck, Mattias Thorsell, Herbert Zirath, Hans Hjelmgren, C. Lacam, Piero Gamarra, Johan Bergsten, Jr‐Tai Chen and M. Tordjman. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Semiconductor Science and Technology, Thin Solid Films and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact