Anna Malmros

571 total citations
19 papers, 453 citations indexed

About

Anna Malmros is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, Anna Malmros has authored 19 papers receiving a total of 453 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 6 papers in Mechanics of Materials. Recurrent topics in Anna Malmros's work include GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). Anna Malmros is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). Anna Malmros collaborates with scholars based in Sweden and France. Anna Malmros's co-authors include Niklas Rorsman, H. Blanck, Mattias Thorsell, Herbert Zirath, Hans Hjelmgren, C. Lacam, Piero Gamarra, Johan Bergsten, Jr‐Tai Chen and M. Tordjman and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and IEEE Electron Device Letters.

In The Last Decade

Anna Malmros

18 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Anna Malmros Sweden 13 348 328 153 135 64 19 453
P. Janke United States 12 434 1.2× 373 1.1× 162 1.1× 121 0.9× 53 0.8× 23 505
Michael Dammann Germany 8 524 1.5× 451 1.4× 204 1.3× 118 0.9× 53 0.8× 23 596
Krzesimir Nowakowski-Szkudlarek Poland 12 196 0.6× 283 0.9× 203 1.3× 79 0.6× 77 1.2× 40 351
M. A. Poisson France 8 325 0.9× 222 0.7× 229 1.5× 72 0.5× 59 0.9× 30 431
Hans Hjelmgren Sweden 15 486 1.4× 267 0.8× 163 1.1× 93 0.7× 58 0.9× 32 557
Shinichi Takigawa Japan 11 315 0.9× 303 0.9× 297 1.9× 68 0.5× 62 1.0× 34 461
P. A. Houston United Kingdom 10 370 1.1× 256 0.8× 198 1.3× 120 0.9× 64 1.0× 25 448
W. Yeo United States 7 129 0.4× 280 0.9× 149 1.0× 172 1.3× 135 2.1× 10 351
Yoshinobu Tarutani Japan 12 134 0.4× 297 0.9× 171 1.1× 143 1.1× 107 1.7× 42 378
İsmail H. Oğuzman United States 10 525 1.5× 590 1.8× 345 2.3× 219 1.6× 99 1.5× 19 743

Countries citing papers authored by Anna Malmros

Since Specialization
Citations

This map shows the geographic impact of Anna Malmros's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anna Malmros with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anna Malmros more than expected).

Fields of papers citing papers by Anna Malmros

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anna Malmros. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anna Malmros. The network helps show where Anna Malmros may publish in the future.

Co-authorship network of co-authors of Anna Malmros

This figure shows the co-authorship network connecting the top 25 collaborators of Anna Malmros. A scholar is included among the top collaborators of Anna Malmros based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anna Malmros. Anna Malmros is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Bergsten, Johan, Vanya Darakchieva, Anna Malmros, et al.. (2024). Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique. IEEE Transactions on Electron Devices. 71(12). 7383–7389.
2.
Chen, Ding-Yuan, Anna Malmros, Mattias Thorsell, et al.. (2020). Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors. IEEE Electron Device Letters. 41(6). 828–831. 43 indexed citations
3.
Malmros, Anna. (2019). Advanced III-Nitride Technology for mm-Wave Applications. Chalmers Research (Chalmers University of Technology). 1 indexed citations
4.
Malmros, Anna, Jr‐Tai Chen, Hans Hjelmgren, et al.. (2019). Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer. IEEE Transactions on Electron Devices. 66(7). 2910–2915. 12 indexed citations
5.
Malmros, Anna, Piero Gamarra, Mattias Thorsell, et al.. (2018). Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier. IEEE Transactions on Electron Devices. 66(1). 364–371. 49 indexed citations
6.
Lin, Yen-Ku, Johan Bergsten, Anna Malmros, et al.. (2018). A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. Semiconductor Science and Technology. 33(9). 95019–95019. 20 indexed citations
7.
Huang, Tongde, Anna Malmros, Johan Bergsten, et al.. (2015). Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application. 2015 Asia-Pacific Microwave Conference (APMC). 24. 1–3. 2 indexed citations
8.
Huang, Tongde, Anna Malmros, Johan Bergsten, et al.. (2015). Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition. IEEE Electron Device Letters. 36(6). 537–539. 25 indexed citations
9.
Bergsten, Johan, Anna Malmros, M. Tordjman, et al.. (2015). Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology. 30(10). 105034–105034. 23 indexed citations
10.
Malmros, Anna, Piero Gamarra, Hans Hjelmgren, et al.. (2015). Evaluation of Thermal Versus Plasma-Assisted ALD Al<sub>2</sub>O<sub>3</sub> as Passivation for InAlN/AlN/GaN HEMTs. IEEE Electron Device Letters. 36(3). 235–237. 26 indexed citations
11.
12.
Bergsten, Johan, Jr‐Tai Chen, Sebastian Gustafsson, et al.. (2015). Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process. IEEE Transactions on Electron Devices. 63(1). 333–338. 18 indexed citations
13.
Malmros, Anna, Piero Gamarra, Mattias Thorsell, et al.. (2014). Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 924–927. 19 indexed citations
14.
Schleeh, Joel, Niklas Wadefalk, J.P. Starski, et al.. (2012). Cryogenic 0.5&#x2013;13 GHz low noise amplifier with 3 K mid-band noise temperature. Chalmers Research (Chalmers University of Technology). 1–3. 3 indexed citations
15.
Schleeh, Joel, Anna Malmros, B. Nilsson, et al.. (2012). Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz. IEEE Electron Device Letters. 33(5). 664–666. 84 indexed citations
16.
Malmros, Anna, H. Blanck, & Niklas Rorsman. (2011). Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs. Semiconductor Science and Technology. 26(7). 75006–75006. 81 indexed citations
17.
Malmros, Anna, Kristoffer Andersson, & Niklas Rorsman. (2011). Combined TiN- and TaN temperature compensated thin film resistors. Thin Solid Films. 520(6). 2162–2165. 21 indexed citations
18.
Malmros, Anna, Mattias Südow, Kristoffer Andersson, & Niklas Rorsman. (2010). TiN thin film resistors for monolithic microwave integrated circuits. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(5). 912–915. 8 indexed citations
19.
Grahn, Jan, et al.. (2005). InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance. 124–128. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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