M. Oualli

481 total citations
25 papers, 351 citations indexed

About

M. Oualli is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Oualli has authored 25 papers receiving a total of 351 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Oualli's work include GaN-based semiconductor devices and materials (25 papers), Radio Frequency Integrated Circuit Design (17 papers) and Semiconductor Quantum Structures and Devices (9 papers). M. Oualli is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Radio Frequency Integrated Circuit Design (17 papers) and Semiconductor Quantum Structures and Devices (9 papers). M. Oualli collaborates with scholars based in France, Germany and Italy. M. Oualli's co-authors include S.L. Delage, E. Morvan, C. Dua, Olivier Jardel, M. Tordjman, N. Sarazin, M.A. Poisson, S. Piotrowicz, Christophe Gaquière and O. Drisse and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

M. Oualli

25 papers receiving 341 citations

Peers

M. Oualli

CMP

EEE

EOMM

AMPO

C. Lacam France

Ming Tao China

Jean-Claude de Jaeger France

Cen Kong China

Marco Malinverni Switzerland

N. Sarazin France

S.J. Cai United States

V. Kaper United States

Dirk Fahle Germany

Fabio Alessio Marino Italy

C. Lacam France

M. Oualli

422 ×1.3

CMP

362 ×1.4

EEE

164 ×1.7

EOMM

126 ×1.3

AMPO

47 ×0.8

Citations per year, relative to M. Oualli M. Oualli (= 1×) peers C. Lacam

Countries citing papers authored by M. Oualli

Since Specialization

Citations

This map shows the geographic impact of M. Oualli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Oualli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Oualli more than expected).

Fields of papers citing papers by M. Oualli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Oualli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Oualli. The network helps show where M. Oualli may publish in the future.

Co-authorship network of co-authors of M. Oualli

This figure shows the co-authorship network connecting the top 25 collaborators of M. Oualli. A scholar is included among the top collaborators of M. Oualli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Oualli. M. Oualli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lacam, C., N. Michel, M. Oualli, et al.. (2024). InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE. Applied Physics Letters. 125(1). 1 indexed citations

Lacam, C., N. Michel, C. Dua, et al.. (2019). 10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology. 824–827. 14 indexed citations

Delage, S.L., S. Piotrowicz, Piero Gamarra, et al.. (2018). InAlGaN/GaN HEMT technology for Ka band applications. 234–237. 2 indexed citations

Piotrowicz, S., Piero Gamarra, E. Chartier, et al.. (2018). First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology. 1–3. 9 indexed citations

Oualli, M., C. Dua, S. Piotrowicz, et al.. (2018). Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectronics Reliability. 88-90. 418–422. 3 indexed citations

Piotrowicz, S., Piero Gamarra, C. Dua, et al.. (2017). InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. International Journal of Microwave and Wireless Technologies. 10(1). 39–46. 13 indexed citations

Aubry, R., J. Jacquet, M. Oualli, et al.. (2016). ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT. IEEE Electron Device Letters. 37(5). 629–632. 49 indexed citations

Piotrowicz, S., R. Aubry, E. Chartier, et al.. (2016). InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz. 69–72. 4 indexed citations

Dua, C., Michel Campovecchio, M. Oualli, et al.. (2015). Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters. International Journal of Microwave and Wireless Technologies. 7(3-4). 287–296. 17 indexed citations

10.

Rossetto, Isabella, Fabiana Rampazzo, Simone Gerardin, et al.. (2015). Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs. Solid-State Electronics. 113. 15–21. 5 indexed citations

11.

Rossetto, Isabella, Fabiana Rampazzo, Simone Gerardin, et al.. (2014). Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. Padua Research Archive (University of Padova). 381–384. 3 indexed citations

12.

Aubry, R., N. Michel, J. Jacquet, et al.. (2014). S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs. 1–4. 1 indexed citations

13.

Piotrowicz, S., Olivier Jardel, E. Chartier, et al.. (2014). 12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications. 1–3. 12 indexed citations

14.

Rossetto, Isabella, Riccardo Silvestri, S.L. Delage, et al.. (2013). Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectronics Reliability. 53(9-11). 1476–1480. 2 indexed citations

15.

Jardel, Olivier, Tibault Reveyrand, N. Sarazin, et al.. (2012). First demonstration of AlInN/GaN HEMTs amplifiers at K band. 31. 1–3. 7 indexed citations

16.

Piotrowicz, S., E. Chartier, Olivier Jardel, et al.. (2011). Development of InAlN/GaN HEMTs Power Devices in S-Band. 1–4. 4 indexed citations

17.

Poisson, M. A., N. Sarazin, M. Tordjman, et al.. (2010). LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(5). 1317–1324. 6 indexed citations

18.

Piotrowicz, S., E. Morvan, E. Chartier, et al.. (2010). Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications. International Journal of Microwave and Wireless Technologies. 2(1). 105–114. 1 indexed citations

19.

Sarazin, N., E. Morvan, M.A. Poisson, et al.. (2009). AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz. IEEE Electron Device Letters. 31(1). 11–13. 104 indexed citations

20.

Piotrowicz, S., E. Chartier, J. Jacquet, et al.. (2009). Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band. 1784–1787. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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