R. Aubry

637 total citations
31 papers, 457 citations indexed

About

R. Aubry is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, R. Aubry has authored 31 papers receiving a total of 457 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 6 papers in Mechanics of Materials. Recurrent topics in R. Aubry's work include GaN-based semiconductor devices and materials (28 papers), Radio Frequency Integrated Circuit Design (12 papers) and Silicon Carbide Semiconductor Technologies (11 papers). R. Aubry is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Radio Frequency Integrated Circuit Design (12 papers) and Silicon Carbide Semiconductor Technologies (11 papers). R. Aubry collaborates with scholars based in France, Germany and Italy. R. Aubry's co-authors include S.L. Delage, S. Piotrowicz, J. Jacquet, C. Dua, Piero Gamarra, E. Chartier, Olivier Jardel, Muriel Bouttemy, Arnaud Etchéberry and Jackie Vigneron and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

R. Aubry

31 papers receiving 443 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Aubry France 12 319 311 89 88 86 31 457
S. Piotrowicz France 12 458 1.4× 352 1.1× 111 1.2× 70 0.8× 42 0.5× 53 525
Z.C. Feng United States 11 202 0.6× 186 0.6× 151 1.7× 81 0.9× 200 2.3× 32 417
S.M. Thahab Iraq 13 173 0.5× 143 0.5× 88 1.0× 115 1.3× 225 2.6× 50 402
Bahadir Küçükgök United States 9 144 0.5× 161 0.5× 56 0.6× 102 1.2× 290 3.4× 19 389
D. Machajdı́k Slovakia 12 212 0.7× 154 0.5× 48 0.5× 131 1.5× 250 2.9× 51 456
Antonius A. I. Aarnink Netherlands 14 388 1.2× 129 0.4× 51 0.6× 90 1.0× 274 3.2× 35 488
Neal Pierce United States 12 129 0.4× 99 0.3× 45 0.5× 69 0.8× 206 2.4× 20 335
Kengo Nagata Japan 11 168 0.5× 212 0.7× 45 0.5× 171 1.9× 134 1.6× 29 356
Z. Šaltytė Lithuania 14 231 0.7× 107 0.3× 49 0.6× 171 1.9× 377 4.4× 33 492
L. Harmatha Slovakia 12 393 1.2× 72 0.2× 153 1.7× 46 0.5× 181 2.1× 76 495

Countries citing papers authored by R. Aubry

Since Specialization
Citations

This map shows the geographic impact of R. Aubry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Aubry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Aubry more than expected).

Fields of papers citing papers by R. Aubry

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Aubry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Aubry. The network helps show where R. Aubry may publish in the future.

Co-authorship network of co-authors of R. Aubry

This figure shows the co-authorship network connecting the top 25 collaborators of R. Aubry. A scholar is included among the top collaborators of R. Aubry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Aubry. R. Aubry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Aubry, R., et al.. (2025). Microfluidic Device Manufacturing by Light-Based 3D Printing for Organoid Vascularization. Methods in molecular biology. 1 indexed citations
2.
Aubry, R., J. Jacquet, M. Oualli, et al.. (2016). ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT. IEEE Electron Device Letters. 37(5). 629–632. 49 indexed citations
3.
Piotrowicz, S., R. Aubry, E. Chartier, et al.. (2016). InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz. 69–72. 4 indexed citations
4.
Rossetto, Isabella, Fabiana Rampazzo, Simone Gerardin, et al.. (2015). Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs. Solid-State Electronics. 113. 15–21. 5 indexed citations
5.
Rossetto, Isabella, Fabiana Rampazzo, Matteo Meneghini, et al.. (2014). Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectronics Reliability. 54(9-10). 2248–2252. 9 indexed citations
6.
Jardel, Olivier, R. Aubry, E. Chartier, et al.. (2012). A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications. 11 indexed citations
7.
Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 505–508. 42 indexed citations
8.
Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 13 indexed citations
9.
Jardel, Olivier, C. Charbonniaud, J. Jacquet, et al.. (2009). A new nonlinear HEMT model for AlGaN/GaN switch applications. 73–76. 18 indexed citations
10.
Bluet, Jean‐Marie, Philippe Girard, G. Brémond, et al.. (2009). Deep levels investigation of AlGaN/GaN heterostructure transistors. Physica B Condensed Matter. 404(23-24). 4877–4879. 11 indexed citations
11.
Poisson, M.A., M. Tordjman, J. Di Persio, et al.. (2008). GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. Journal of Crystal Growth. 310(23). 5232–5236. 3 indexed citations
12.
Djouadi, M. A., Pierre‐Yves Tessier, Pierre-Yves Jouan, et al.. (2008). Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature. Applied Physics Letters. 93(5). 20 indexed citations
13.
Tessier, Pierre‐Yves, Marie‐Paule Besland, B. Angleraud, et al.. (2008). Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films. Journal of Applied Physics. 104(6). 31 indexed citations
14.
Reveyrand, Tibault, Michel Campovecchio, R. Aubry, et al.. (2007). Design of GaN-based balanced cascode cells for wide-band distributed power amplifier. HAL (Le Centre pour la Communication Scientifique Directe). 6 indexed citations
15.
Aubry, R., C. Dua, J. Jacquet, et al.. (2004). Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors. The European Physical Journal Applied Physics. 27(1-3). 293–296. 5 indexed citations
16.
Poisson, M.A., M. Tordjman, R. Aubry, et al.. (2004). LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices. Journal of Crystal Growth. 272(1-4). 305–311. 7 indexed citations
17.
Dietzel, Dirk, R. Meckenstock, J. Pelzl, et al.. (2004). Thermal expansion imaging and finite element simulation of hot lines in high power AlGaN HEMT devices. Superlattices and Microstructures. 35(3-6). 477–484. 8 indexed citations
18.
Aubry, R., J. Jacquet, E. Chartier, et al.. (2003). Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements. The European Physical Journal Applied Physics. 22(2). 77–82. 10 indexed citations
19.
Cordier, Y., F. Sèmond, P. Lorenzini, et al.. (2003). MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances. Journal of Crystal Growth. 251(1-4). 811–815. 27 indexed citations
20.
Gaquière, Christophe, et al.. (2002). High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz. IEEE Electron Device Letters. 23(8). 461–463. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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