J. D. Guo

580 total citations
14 papers, 479 citations indexed

About

J. D. Guo is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. D. Guo has authored 14 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. D. Guo's work include GaN-based semiconductor devices and materials (8 papers), Semiconductor materials and devices (6 papers) and Ga2O3 and related materials (4 papers). J. D. Guo is often cited by papers focused on GaN-based semiconductor devices and materials (8 papers), Semiconductor materials and devices (6 papers) and Ga2O3 and related materials (4 papers). J. D. Guo collaborates with scholars based in China and Taiwan. J. D. Guo's co-authors include Ming Feng, Fu‐Ming Pan, Nils C. Gerhardt, Chun‐Yen Chang, J. M. Hong, Chyi‐Tyi Lee, J. S. Tsang, Hao Cheng, Chih‐Hao Lee and Edward Yi Chang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Access.

In The Last Decade

J. D. Guo

11 papers receiving 460 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. D. Guo China	8	424	297	180	172	109	14	479
M. Tordjman France	14	502 1.2×	362 1.2×	223 1.2×	141 0.8×	105 1.0×	29	545
U.H. Liaw Taiwan	9	327 0.8×	229 0.8×	174 1.0×	149 0.9×	217 2.0×	19	472
M. W. Leksono United States	9	407 1.0×	265 0.9×	186 1.0×	121 0.7×	200 1.8×	16	492
C. Lacam France	14	422 1.0×	362 1.2×	164 0.9×	126 0.7×	59 0.5×	32	468
S.J. Cai United States	10	334 0.8×	298 1.0×	152 0.8×	106 0.6×	85 0.8×	13	417
Tso-Min Chou United States	8	382 0.9×	452 1.5×	91 0.5×	168 1.0×	141 1.3×	14	540
P. Javorka Germany	14	501 1.2×	443 1.5×	199 1.1×	125 0.7×	122 1.1×	46	580
Frank Habel Germany	12	304 0.7×	132 0.4×	130 0.7×	110 0.6×	136 1.2×	25	333
Shuichi Kubo Japan	5	387 0.9×	156 0.5×	236 1.3×	101 0.6×	208 1.9×	9	422
Toshiya Tabuchi Japan	13	401 0.9×	335 1.1×	245 1.4×	85 0.5×	164 1.5×	35	498

Countries citing papers authored by J. D. Guo

Since Specialization

Citations

This map shows the geographic impact of J. D. Guo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. D. Guo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. D. Guo more than expected).

Fields of papers citing papers by J. D. Guo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. D. Guo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. D. Guo. The network helps show where J. D. Guo may publish in the future.

Co-authorship network of co-authors of J. D. Guo

This figure shows the co-authorship network connecting the top 25 collaborators of J. D. Guo. A scholar is included among the top collaborators of J. D. Guo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. D. Guo. J. D. Guo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Guo, J. D., et al.. (2025). Sequence modeling for predicting three-dimensional plasma etching profiles with deep learning. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(4).

Guo, J. D., et al.. (2025). Attention-enhanced conditional variational autoencoder integrating 3D plasma etching simulation for etching process optimization. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(2).

Guo, J. D., et al.. (2024). Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization. IEEE Access. 12. 127065–127073. 7 indexed citations

Chang, Cheng, Hao Huan, J. D. Guo, & Ran Tao. (2017). Complementary peak reducing signals for TDCS PAPR reduction. IET Communications. 11(6). 961–967. 5 indexed citations

Guo, J. D., et al.. (2016). A code Doppler compensation algorithm in acquisition for high dynamic spread spectrum signals. 1–5. 4 indexed citations

Guo, J. D., et al.. (2007). Design and Implementation of a High-Resolution Hybrid DPWM. Journal of Semiconductors. 28(6). 967–974.

Cheng, Hao, et al.. (1997). Growth and characterizations of GaN on SiC substrates with buffer layers. Journal of Applied Physics. 82(5). 2378–2382. 25 indexed citations

Cheng, Hao, et al.. (1997). Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures. Applied Physics Letters. 70(19). 2583–2585. 17 indexed citations

Guo, J. D., et al.. (1996). A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films. Applied Physics Letters. 68(2). 235–237. 72 indexed citations

10.

Gerhardt, Nils C., et al.. (1996). The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer. Applied Physics Letters. 68(26). 3758–3760. 55 indexed citations

11.

Guo, J. D., et al.. (1996). Schottky contact and the thermal stability of Ni on n-type GaN. Journal of Applied Physics. 80(3). 1623–1627. 149 indexed citations

12.

Feng, Ming, J. D. Guo, Yang Lu, & Edward Yi Chang. (1996). Reactive ion etching of GaN with BCl3/SF6 plasmas. Materials Chemistry and Physics. 45(1). 80–83. 21 indexed citations

13.

Lee, Chih‐Hao, et al.. (1996). X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers. Applied Physics Letters. 68(24). 3440–3442. 26 indexed citations

14.

Guo, J. D., et al.. (1995). Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy. Applied Physics Letters. 67(12). 1721–1723. 98 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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