Niklas Rorsman

4.2k total citations
199 papers, 3.2k citations indexed

About

Niklas Rorsman is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Niklas Rorsman has authored 199 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 175 papers in Electrical and Electronic Engineering, 103 papers in Condensed Matter Physics and 53 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Niklas Rorsman's work include GaN-based semiconductor devices and materials (103 papers), Radio Frequency Integrated Circuit Design (96 papers) and Silicon Carbide Semiconductor Technologies (67 papers). Niklas Rorsman is often cited by papers focused on GaN-based semiconductor devices and materials (103 papers), Radio Frequency Integrated Circuit Design (96 papers) and Silicon Carbide Semiconductor Technologies (67 papers). Niklas Rorsman collaborates with scholars based in Sweden, United States and Iceland. Niklas Rorsman's co-authors include Herbert Zirath, Mattias Thorsell, Kristoffer Andersson, I. Angelov, Anna Malmros, Erik Janzén, Martin Fagerlind, M.C. Alonso‐García, Mattias Südow and Hans Hjelmgren and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Niklas Rorsman

190 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Niklas Rorsman Sweden 31 2.8k 1.8k 769 532 496 199 3.2k
Christophe Gaquière France 33 3.1k 1.1× 2.7k 1.5× 1.4k 1.8× 802 1.5× 588 1.2× 276 3.9k
M. Mikulla Germany 23 1.8k 0.7× 1.2k 0.7× 707 0.9× 304 0.6× 196 0.4× 149 2.1k
R. Quay Germany 31 3.7k 1.3× 3.1k 1.7× 817 1.1× 762 1.4× 454 0.9× 391 4.5k
Iain Thayne United Kingdom 23 1.5k 0.5× 352 0.2× 751 1.0× 184 0.3× 407 0.8× 174 1.8k
Peter Brückner Germany 24 1.4k 0.5× 1.6k 0.9× 597 0.8× 432 0.8× 370 0.7× 122 2.0k
P.C. Chao United States 28 2.3k 0.8× 724 0.4× 1.4k 1.8× 124 0.2× 203 0.4× 136 2.5k
J.A. Higgins United States 23 1.7k 0.6× 752 0.4× 744 1.0× 303 0.6× 196 0.4× 111 2.0k
K. Joshin Japan 24 1.6k 0.6× 1.0k 0.6× 503 0.7× 305 0.6× 197 0.4× 94 1.8k
Yuji Ando Japan 24 1.7k 0.6× 1.2k 0.7× 762 1.0× 502 0.9× 366 0.7× 126 2.1k
E. Morvan France 18 1.2k 0.4× 929 0.5× 390 0.5× 280 0.5× 201 0.4× 101 1.4k

Countries citing papers authored by Niklas Rorsman

Since Specialization
Citations

This map shows the geographic impact of Niklas Rorsman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Niklas Rorsman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Niklas Rorsman more than expected).

Fields of papers citing papers by Niklas Rorsman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Niklas Rorsman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Niklas Rorsman. The network helps show where Niklas Rorsman may publish in the future.

Co-authorship network of co-authors of Niklas Rorsman

This figure shows the co-authorship network connecting the top 25 collaborators of Niklas Rorsman. A scholar is included among the top collaborators of Niklas Rorsman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Niklas Rorsman. Niklas Rorsman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ranjan, Alok, et al.. (2025). Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling. IEEE Transactions on Device and Materials Reliability. 25(4). 861–868.
2.
Bergsten, Johan, Vanya Darakchieva, Anna Malmros, et al.. (2024). Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique. IEEE Transactions on Electron Devices. 71(12). 7383–7389.
3.
Persson, Axel R., Steffen Richter, V. Stanishev, et al.. (2024). Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties. Applied Physics Letters. 125(12). 4 indexed citations
4.
Rorsman, Niklas, et al.. (2024). Short Term Drift in the Recovery Time of GaN HEMT Switches. Chalmers Research (Chalmers University of Technology). 6–9. 1 indexed citations
5.
Persson, Axel R., Steffen Richter, Philipp Kühne, et al.. (2023). Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers. Applied Physics Letters. 122(15). 12 indexed citations
6.
Persson, Axel R., Jr‐Tai Chen, Daniel Haasmann, et al.. (2023). Observations of very fast electron traps at SiC/high-κ dielectric interfaces. APL Materials. 11(11).
7.
Kakanakova‐Georgieva, A., E.Ö. Sveinbjörnsson, Axel R. Persson, et al.. (2022). Mg-doping and free-hole properties of hot-wall MOCVD GaN. Journal of Applied Physics. 131(18). 20 indexed citations
8.
Lee, Hsin-Ying, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, & Ching-Ting Lee. (2021). Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE Journal of the Electron Devices Society. 9. 393–399. 14 indexed citations
9.
Lee, Hsin-Ying, et al.. (2021). Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al 2 O 3 Gate Dielectric Layer. ECS Journal of Solid State Science and Technology. 10(5). 55017–55017. 4 indexed citations
10.
Desmaris, Vincent, Denis Meledin, Erik Sundin, et al.. (2019). Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures. Chalmers Research (Chalmers University of Technology). 3 indexed citations
11.
Huang, Tongde, et al.. (2019). A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz. Japanese Journal of Applied Physics. 58(SC). SCCD19–SCCD19. 1 indexed citations
12.
Mansouri, Aida, Omid Habibpour, M. Winters, et al.. (2017). High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide. Scientific Reports. 7(1). 2419–2419. 34 indexed citations
13.
Habibpour, Omid, Zhongxia Simon He, Włodek Strupiński, Niklas Rorsman, & Herbert Zirath. (2017). Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication. Scientific Reports. 7(1). 41828–41828. 31 indexed citations
14.
Andersson, Christer M., Mustafa Özen, David Gustafsson, et al.. (2013). A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation. Chalmers Publication Library (Chalmers University of Technology). 283–286. 7 indexed citations
15.
Nilsson, Joakim, et al.. (2011). High performance GaN front-end MMICs. Chalmers Publication Library (Chalmers University of Technology). 348–351. 14 indexed citations
16.
Angelov, I., et al.. (2006). On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs. AMS Acta (University of Bologna). 309–312. 5 indexed citations
17.
Desmaris, Vincent & Niklas Rorsman. (2005). Fabrication and Characterization of AlGaN/GaN HEMTs. Chalmers Publication Library (Chalmers University of Technology). 1 indexed citations
18.
Südow, Mattias, et al.. (2004). Planar sic schottky diodes for MMIC applications. Chalmers Publication Library (Chalmers University of Technology). 1. 153–156. 2 indexed citations
19.
Angelov, Nikolay, Herbert Zirath, & Niklas Rorsman. (1995). Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's. IEEE Transactions on Microwave Theory and Techniques. 43(5). 1046–1052. 43 indexed citations
20.
Weikle, Robert M., Niklas Rorsman, Herbert Zirath, & E. Kollberg. (1993). A Subharmonically Pumped HFET Grid Mixer. Softwaretechnik-Trends. 113. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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