D. Floriot

1.1k total citations
60 papers, 767 citations indexed

About

D. Floriot is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Floriot has authored 60 papers receiving a total of 767 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 42 papers in Condensed Matter Physics and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Floriot's work include Radio Frequency Integrated Circuit Design (45 papers), GaN-based semiconductor devices and materials (42 papers) and Semiconductor Quantum Structures and Devices (22 papers). D. Floriot is often cited by papers focused on Radio Frequency Integrated Circuit Design (45 papers), GaN-based semiconductor devices and materials (42 papers) and Semiconductor Quantum Structures and Devices (22 papers). D. Floriot collaborates with scholars based in France, Germany and United Kingdom. D. Floriot's co-authors include Jean-Pierre Teyssier, Olivier Jardel, Raymond Quéré, C. Charbonniaud, Fabien de Groote, H. Blanck, E. Chartier, S.L. Delage, Tibault Reveyrand and Jean-Michel Nébus and has published in prestigious journals such as Frontiers in Plant Science, IEEE Transactions on Microwave Theory and Techniques and IEEE Electron Device Letters.

In The Last Decade

D. Floriot

57 papers receiving 726 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Floriot France 14 740 539 168 41 24 60 767
Dirk Schwantuschke Germany 15 517 0.7× 360 0.7× 134 0.8× 43 1.0× 38 1.6× 71 557
F. van Raay Germany 16 742 1.0× 488 0.9× 136 0.8× 75 1.8× 48 2.0× 88 792
A. Nanni Italy 11 552 0.7× 453 0.8× 165 1.0× 76 1.9× 48 2.0× 41 600
Valeria Vadalà Italy 17 797 1.1× 599 1.1× 109 0.6× 28 0.7× 34 1.4× 88 845
Shiyong Zhang China 14 428 0.6× 197 0.4× 202 1.2× 44 1.1× 51 2.1× 50 472
Changsi Wang China 8 346 0.5× 293 0.5× 77 0.5× 17 0.4× 23 1.0× 15 367
S. Nuttinck United States 14 705 1.0× 227 0.4× 180 1.1× 25 0.6× 110 4.6× 40 754
Stephan Maroldt Germany 9 304 0.4× 219 0.4× 71 0.4× 69 1.7× 20 0.8× 28 348
Edward Viveiros United States 10 297 0.4× 172 0.3× 50 0.3× 33 0.8× 25 1.0× 36 331
Ho‐Kyun Ahn South Korea 10 256 0.3× 155 0.3× 104 0.6× 77 1.9× 13 0.5× 48 320

Countries citing papers authored by D. Floriot

Since Specialization
Citations

This map shows the geographic impact of D. Floriot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Floriot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Floriot more than expected).

Fields of papers citing papers by D. Floriot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Floriot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Floriot. The network helps show where D. Floriot may publish in the future.

Co-authorship network of co-authors of D. Floriot

This figure shows the co-authorship network connecting the top 25 collaborators of D. Floriot. A scholar is included among the top collaborators of D. Floriot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Floriot. D. Floriot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Delage, S.L., S. Piotrowicz, Piero Gamarra, et al.. (2018). InAlGaN/GaN HEMT technology for Ka band applications. 234–237. 2 indexed citations
2.
Nallatamby, Jean‐Christophe, et al.. (2014). Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization. Journal of Computational Electronics. 14(1). 4–14. 2 indexed citations
3.
Floriot, D., et al.. (2014). GH25-10: New qualified power GaN HEMT process from technology to product overview. 225–228. 26 indexed citations
4.
Lambert, Benoît, et al.. (2013). Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectronics Reliability. 53(9-11). 1450–1455. 22 indexed citations
5.
Campovecchio, Michel, et al.. (2013). Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies. International Journal of Microwave and Wireless Technologies. 5(4). 437–445. 1 indexed citations
6.
Floriot, D., et al.. (2012). New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit. European Microwave Integrated Circuit Conference. 317–320. 17 indexed citations
7.
Camiade, M., et al.. (2012). 0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers. European Microwave Integrated Circuit Conference. 171–174. 9 indexed citations
8.
Campovecchio, Michel, et al.. (2012). Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band. International Journal of Microwave and Wireless Technologies. 4(5). 495–503. 3 indexed citations
9.
Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 505–508. 42 indexed citations
10.
Floriot, D., et al.. (2005). Thermal management of power HBT in pulsed operating mode. 2005 European Microwave Conference. 4 pp.–1490. 5 indexed citations
11.
Barataud, Denis, et al.. (2003). Large signal pulsed RF and DC load pull characterization of high voltage 10W GaAs-GaInP HBTs. 3. 1651–1654. 6 indexed citations
12.
Nébus, Jean-Michel, et al.. (2003). Measurement and modelling of static and dynamic breakdowns of power GaInP/GaAs HBTs. 1. 1001–1004. 3 indexed citations
14.
Landesman, Jean-Pierre, et al.. (2002). Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping. D1114/1–D1114/8. 3 indexed citations
15.
Cassette, S., S.L. Delage, E. Chartier, et al.. (2001). Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability. Materials Science and Engineering B. 80(1-3). 279–283. 7 indexed citations
16.
Sydlo, C., H. L. Hartnagel, Viktor Krozer, et al.. (2001). Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. Microelectronics Reliability. 41(9-10). 1567–1571. 1 indexed citations
17.
Delage, S.L., M.A. diForte-Poisson, E. Chartier, et al.. (1999). High-performance collector-up InGaP/GaAs heterojunctionbipolar transistor with Schottky contact. Electronics Letters. 35(8). 670–672. 11 indexed citations
18.
Pérez, S., et al.. (1998). Extremely low noise InGaP/GaAsHBT oscillator at C-band. Electronics Letters. 34(8). 813–814. 8 indexed citations
19.
20.
Forte-Poisson, M.A. di, C. Brylinski, S.L. Delage, et al.. (1994). GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits. Materials Science and Engineering B. 28(1-3). 242–247. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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