C. Dua

1.4k total citations
63 papers, 977 citations indexed

About

C. Dua is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Dua has authored 63 papers receiving a total of 977 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 47 papers in Condensed Matter Physics and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Dua's work include GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (29 papers) and Silicon Carbide Semiconductor Technologies (25 papers). C. Dua is often cited by papers focused on GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (29 papers) and Silicon Carbide Semiconductor Technologies (25 papers). C. Dua collaborates with scholars based in France, Germany and Italy. C. Dua's co-authors include S.L. Delage, E. Morvan, M.A. diForte-Poisson, N. Grandjean, M. Alomari, David Maier, E. Kohn, C. Bru‐Chevallier, E. Chartier and Enrico Zanoni and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.

In The Last Decade

C. Dua

62 papers receiving 944 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Dua France 16 784 766 248 240 134 63 977
M. Alomari Germany 14 547 0.7× 627 0.8× 128 0.5× 243 1.0× 333 2.5× 44 867
J. Mittereder United States 16 499 0.6× 395 0.5× 241 1.0× 158 0.7× 141 1.1× 42 654
C. Christiansen United States 15 382 0.5× 334 0.4× 313 1.3× 281 1.2× 179 1.3× 39 773
Yuechan Kong China 19 864 1.1× 614 0.8× 211 0.9× 287 1.2× 564 4.2× 102 1.2k
E.V. Yakovlev Germany 15 275 0.4× 591 0.8× 212 0.9× 235 1.0× 253 1.9× 38 678
K. G. Irvine United States 15 966 1.2× 338 0.4× 363 1.5× 175 0.7× 122 0.9× 35 1.1k
Daniel Piedra United States 20 1.3k 1.7× 1.5k 1.9× 288 1.2× 784 3.3× 290 2.2× 35 1.7k
J.A. Roussos United States 18 974 1.2× 1.1k 1.5× 290 1.2× 498 2.1× 320 2.4× 49 1.3k
M. Moore United States 11 1.3k 1.6× 1.5k 1.9× 384 1.5× 488 2.0× 271 2.0× 19 1.6k
Jinyan Wang China 22 1.1k 1.5× 1.3k 1.7× 270 1.1× 696 2.9× 265 2.0× 116 1.5k

Countries citing papers authored by C. Dua

Since Specialization
Citations

This map shows the geographic impact of C. Dua's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Dua with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Dua more than expected).

Fields of papers citing papers by C. Dua

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Dua. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Dua. The network helps show where C. Dua may publish in the future.

Co-authorship network of co-authors of C. Dua

This figure shows the co-authorship network connecting the top 25 collaborators of C. Dua. A scholar is included among the top collaborators of C. Dua based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Dua. C. Dua is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Piotrowicz, S., Piero Gamarra, E. Chartier, et al.. (2018). First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology. 1–3. 9 indexed citations
2.
Delage, S.L., S. Piotrowicz, Piero Gamarra, et al.. (2018). InAlGaN/GaN HEMT technology for Ka band applications. 234–237. 2 indexed citations
3.
Piotrowicz, S., Piero Gamarra, C. Dua, et al.. (2017). InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. International Journal of Microwave and Wireless Technologies. 10(1). 39–46. 13 indexed citations
4.
Aubry, R., J. Jacquet, M. Oualli, et al.. (2016). ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT. IEEE Electron Device Letters. 37(5). 629–632. 49 indexed citations
5.
Piotrowicz, S., R. Aubry, E. Chartier, et al.. (2016). InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz. 69–72. 4 indexed citations
6.
Dua, C., Michel Campovecchio, M. Oualli, et al.. (2015). Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters. International Journal of Microwave and Wireless Technologies. 7(3-4). 287–296. 17 indexed citations
7.
Kuzmı́k, J., S. Vitanov, C. Dua, et al.. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics. 51(5R). 54102–54102. 10 indexed citations
8.
Maier, David, M. Alomari, N. Grandjean, et al.. (2012). InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment. IEEE Electron Device Letters. 33(7). 985–987. 91 indexed citations
9.
Maier, David, M. Alomari, N. Grandjean, et al.. (2009). Above 500 °C operation of InAlN/GaN HEMTs. 285–286. 4 indexed citations
10.
Bluet, Jean‐Marie, Philippe Girard, G. Brémond, et al.. (2009). Deep levels investigation of AlGaN/GaN heterostructure transistors. Physica B Condensed Matter. 404(23-24). 4877–4879. 11 indexed citations
11.
Faqir, Mustapha, G. Verzellesi, Alessandro Chini, et al.. (2008). Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors. IEEE Transactions on Device and Materials Reliability. 8(2). 240–247. 81 indexed citations
12.
Mimila‐Arroyo, J., M. Barbé, François Jomard, et al.. (2007). Deuterium passivation of electrically active defects in nonintentionally doped n-GaN. Applied Physics Letters. 90(7). 6 indexed citations
13.
Curutchet, Arnaud, et al.. (2006). AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectronics Reliability. 46(9-11). 1725–1730. 10 indexed citations
14.
Gassoumi, M., Jean‐Marie Bluet, Hassen Maaref, et al.. (2005). Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs. Solid-State Electronics. 50(2). 214–219. 7 indexed citations
15.
Bluet, Jean‐Marie, M. Gassoumi, H. Mâaref, et al.. (2005). Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy. Materials science forum. 483-485. 865–868.
16.
Dua, C., E. Morvan, B. Grimbert, et al.. (2005). Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT. Electronics Letters. 41(16). 927–928. 11 indexed citations
17.
Dua, C., et al.. (2005). A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. Microelectronics Reliability. 45(9-11). 1617–1621. 26 indexed citations
18.
Gassoumi, M., N. Sghaier, H. Mâaref, et al.. (2004). Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates. Materials science forum. 457-460. 1185–1188. 2 indexed citations
19.
Morvan, E., et al.. (2003). Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power. IEEE Transactions on Microwave Theory and Techniques. 51(4). 1129–1134. 13 indexed citations
20.
Dua, C., et al.. (1998). Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors. Journal of Electronic Materials. 27(5). 442–445. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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