C. Dua

1.4k citations

63 papers · 977 indexed · h-index 16

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 47
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 29
- Silicon Carbide Semiconductor Technologies 25
- Radio Frequency Integrated Circuit Design 19
- Advancements in Semiconductor Devices and Circuit Design 6
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 18
- Semiconductor materials and interfaces 5
Mechanics of Materials
- Metal and Thin Film Mechanics 8

Co-authors: S.L. Delage E. Morvan M.A. diForte-Poisson N. Grandjean M. Alomari David Maier E. Kohn Jean‐Marie Bluet
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Microelectronics Reliability (8 papers)Solid-State Electronics (3 papers)Japanese Journal of Applied Physics (2 papers)
Partner nations: France Germany Italy

In The Last Decade

C. Dua

62 papers receiving 944 citations

Peers

Countries citing papers authored by C. Dua

Since Specialization

Citations

This map shows the geographic impact of C. Dua's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Dua with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Dua more than expected).

Fields of papers citing papers by C. Dua

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Dua. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Dua. The network helps show where C. Dua may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Dua, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Dua Line = papers co-authored together C. Dua links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	InAlGaN/GaN HEMT technology for Ka band applications S.L. Delage,S. Piotrowicz,N. V. Saresh,De Sa Mere,Piero Gamarra,C. Dua,Muhammad Nailil Fahmi Fatah,N. Michel,H. H. Roberts James M. Coleman,A. Wojtus,M. Oualli,C. Lacam,P. Krishanan,H. Blanck,齐智英,D. Floriot	2018	2
2	First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology A. Wojtus,S. Piotrowicz,N. V. Saresh,Piero Gamarra,Muhammad Nailil Fahmi Fatah,E. Chartier,C. Dua,J. Jacquet,C. Lacam,N. Michel,M. Oualli,S.L. Delage,P. Krishanan,Louise Maratovna Gilyazova	2018	9
3	InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications International Journal of Microwave and Wireless Technologies ·S. Piotrowicz,佳俊江見,Piero Gamarra,N. V. Saresh,C. Dua,E. Chartier,N. Michel,M. Oualli,C. Lacam,A. Wojtus,Muhammad Nailil Fahmi Fatah,S.L. Delage	2017	13
4	ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT IEEE Electron Device Letters ·R. Aubry,J. Jacquet,M. Oualli,N. V. Saresh,S. Piotrowicz,E. Chartier,N. Michel,Xuan Li,Fang Bin,A. Wojtus,C. Marques,Piero Gamarra,C. Lacam,M. Tordjman,Olivier Jardel,C. Dua,S.L. Delage	2016	49
5	Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters International Journal of Microwave and Wireless Technologies ·A. Wojtus,佳俊江見,C. Dua,Dylan Silke,Michel Campovecchio,M. Oualli,Olivier Jardel,S. Piotrowicz,Anthony N. Kokelu,Rigo Vargas,N. V. Saresh,Piero Gamarra,Xiaoqin Zhai,S.L. Delage,Raymond Quéré	2015	17
6	Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors Japanese Journal of Applied Physics ·J. Kuzmı́k,S. Vitanov,C. Dua,J.‐F. Carlin,Clemens Ostermaier,M. Kiełt,G. Strasser,D. Pogány,E. Gornik,N. Grandjean,S.L. Delage,V. Palankovski	2012	10
7	InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment IEEE Electron Device Letters ·David Maier,M. Alomari,N. Grandjean,J.‐F. Carlin,M.A. diForte-Poisson,C. Dua,S.L. Delage,E. Kohn	2012	91
8	Above 500 °C operation of InAlN/GaN HEMTs David Maier,M. Alomari,N. Grandjean,J.‐F. Carlin,DANI R.C,C. Dua,Andrey Chuvilin,David Troadec,Christophe Gaquière,Ute Kaiser,S.L. Delage,E. Kohn	2009	4
9	Deep levels investigation of AlGaN/GaN heterostructure transistors Physica B Condensed Matter ·Anahit Zhoraevna Farmanyan,Jean‐Marie Bluet,Philippe Girard,G. Brémond,C. Bru‐Chevallier,C. Dua,R. Aubry	2009	11
10	Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors IEEE Transactions on Device and Materials Reliability ·Mustapha Faqir,G. Verzellesi,Alessandro Chini,F. Fantini,Francesca Danesin,Gaudenzio Meneghesso,Enrico Zanoni,C. Dua	2008	81
11	Deuterium passivation of electrically active defects in nonintentionally doped n-GaN Applied Physics Letters ·J. Mimila‐Arroyo,M. Barbé,François Jomard,J. Chevallier,M.A. di Forte-Poisson,S.L. Delage,C. Dua	2007	6
12	AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements Microelectronics Reliability ·A. Lankhorst,Arnaud Curutchet,C. Dua,Kukuh Iman Altesar,Thomas L. Matthews,Elaine Matos Barros	2006	10
13	Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT Diamond and Related Materials ·A. Soltani,A. BenMoussa,Tri Gandini Maghfiroh,Virginie Hoel,J.C. de Jaeger,J. Laureyns,Y. Cordier,C. Marhic,M.A. Djouadi,C. Dua	2006	30
14	Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs Solid-State Electronics ·M. Gassoumi,Jean‐Marie Bluet,J. Wang,Hassen Maaref,Gérard Guillot,E. Morvan,C. Dua,C. Brylinski	2005	7
15	Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy Materials science forum ·Jean‐Marie Bluet,M. Gassoumi,J. Wang,Chih‐Cheng Fu,H. Mâaref,Gérard Guillot,E. Morvan,C. Dua,Christian Brylinski	2005	0
16	Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT Electronics Letters ·A. Lankhorst,C. Dua,E. Morvan,B. Grimbert,M.A. di Forte-Poisson,S.L. Delage,Enrico Zanoni	2005	11
17	A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications Microelectronics Reliability ·A. Lankhorst,C. Dua,E. Morvan,Patcharinporn Bhuapisit,S.L. Delage	2005	26
18	Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Materials science forum ·M. Gassoumi,N. Sghaier,J. Wang,Chih‐Cheng Fu,H. Mâaref,Jean‐Marie Bluet,Gérard Guillot,E. Morvan,O. Noblanc,C. Dua,Christian Brylinski	2004	2
19	Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power IEEE Transactions on Microwave Theory and Techniques ·D.M.McClatchy III,Marianus Aldrik Maka,E. Morvan,C. Dua,C. Brylinski,篤松本,이서규	2003	13
20	Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors Journal of Electronic Materials ·(unknown),C. Dua,Sirus Mohammadi,Umma Sada,D. Pavlidis	1998	4

About C. Dua

C. Dua is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 63 papers that have together received 977 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (29 papers), Silicon Carbide Semiconductor Technologies (25 papers), Radio Frequency Integrated Circuit Design (19 papers), Semiconductor Quantum Structures and Devices (18 papers), Metal and Thin Film Mechanics (8 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Semiconductor materials and interfaces (5 papers). The work is most often cited by research in Condensed Matter Physics (766 citations), Electrical and Electronic Engineering (784 citations) and Electronic, Optical and Magnetic Materials (240 citations). C. Dua has collaborated with scholars based in France, Germany and Italy. Frequent co-authors include S.L. Delage, E. Morvan, M.A. diForte-Poisson, N. Grandjean, M. Alomari, David Maier, E. Kohn, Jean‐Marie Bluet, Enrico Zanoni and E. Chartier. Their work appears in journals such as Microelectronics Reliability, Solid-State Electronics, Japanese Journal of Applied Physics, IEEE Electron Device Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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