Riad Kabouche

444 total citations
15 papers, 305 citations indexed

About

Riad Kabouche is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Riad Kabouche has authored 15 papers receiving a total of 305 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Riad Kabouche's work include GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (6 papers). Riad Kabouche is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (6 papers). Riad Kabouche collaborates with scholars based in France, Italy and Belgium. Riad Kabouche's co-authors include Farid Medjdoub, Étienne Okada, Malek Zegaoui, Idriss Abid, C. Lacam, Piero Gamarra, M. Tordjman, Jun Lu, Y. Cordier and Catherine Bougerol and has published in prestigious journals such as Applied Physics Letters, Materials and IEEE Microwave and Wireless Components Letters.

In The Last Decade

Riad Kabouche

15 papers receiving 295 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Riad Kabouche France	10	252	211	162	79	52	15	305
Quanbin Zhou China	12	311 1.2×	224 1.1×	157 1.0×	133 1.7×	79 1.5×	28	376
Shahadat H. Sohel United States	12	344 1.4×	279 1.3×	315 1.9×	178 2.3×	47 0.9×	20	477
Manyam Pilla United States	9	337 1.3×	291 1.4×	166 1.0×	58 0.7×	95 1.8×	10	384
Jiarui Gong United States	11	166 0.7×	179 0.8×	132 0.8×	112 1.4×	65 1.3×	31	300
Yumin Zhang China	10	200 0.8×	171 0.8×	110 0.7×	169 2.1×	68 1.3×	49	320
Liang He China	12	278 1.1×	207 1.0×	209 1.3×	140 1.8×	44 0.8×	54	351
Towhidur Razzak United States	12	344 1.4×	293 1.4×	217 1.3×	92 1.2×	54 1.0×	22	403
Joseph J. Freedsman Japan	14	442 1.8×	374 1.8×	286 1.8×	124 1.6×	64 1.2×	21	493
Nelson Braga United States	9	386 1.5×	354 1.7×	180 1.1×	88 1.1×	100 1.9×	19	459

Countries citing papers authored by Riad Kabouche

Since Specialization

Citations

This map shows the geographic impact of Riad Kabouche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Riad Kabouche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Riad Kabouche more than expected).

Fields of papers citing papers by Riad Kabouche

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Riad Kabouche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Riad Kabouche. The network helps show where Riad Kabouche may publish in the future.

Co-authorship network of co-authors of Riad Kabouche

This figure shows the co-authorship network connecting the top 25 collaborators of Riad Kabouche. A scholar is included among the top collaborators of Riad Kabouche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Riad Kabouche. Riad Kabouche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

15 of 15 papers shown

Meneghini, Matteo, Riad Kabouche, Étienne Okada, et al.. (2021). Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. Microelectronics Reliability. 123. 114199–114199. 3 indexed citations

Chikoidze, E., Tamar Tchelidze, Corinne Sartel, et al.. (2020). Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. Materials Today Physics. 15. 100263–100263. 40 indexed citations

Tajalli, Alaleh, Matteo Meneghini, Riad Kabouche, et al.. (2020). High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 13(19). 4271–4271. 18 indexed citations

Kabouche, Riad, et al.. (2020). High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz. SPIRE - Sciences Po Institutional REpository. 285–288. 9 indexed citations

Kabouche, Riad, et al.. (2019). High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation. IEEE Journal of the Electron Devices Society. 7. 1145–1150. 87 indexed citations

Kabouche, Riad, Idriss Abid, Joff Derluyn, et al.. (2019). Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a). 217(7). 9 indexed citations

Kabouche, Riad, Étienne Okada, Farid Medjdoub, et al.. (2019). High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems. 28(01n02). 1940003–1940003. 2 indexed citations

Abid, Idriss, Riad Kabouche, Catherine Bougerol, et al.. (2019). High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines. 10(10). 690–690. 30 indexed citations

Lu, Jun, Jr‐Tai Chen, Martin Dahlqvist, et al.. (2019). Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. Applied Physics Letters. 115(22). 28 indexed citations

10.

Meneghini, Matteo, Carlo De Santi, Riad Kabouche, et al.. (2019). Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability. 100-101. 113388–113388. 5 indexed citations

11.

Kabouche, Riad, et al.. (2017). High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs. physica status solidi (a). 214(8). 1600797–1600797. 12 indexed citations

12.

Kabouche, Riad, et al.. (2017). Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band. IEEE Microwave and Wireless Components Letters. 27(4). 419–421. 10 indexed citations

13.

Kabouche, Riad, Sylvie Lépilliet, Malek Zegaoui, et al.. (2016). InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics. 5(2). 31–31. 24 indexed citations

14.

Medjdoub, Farid, et al.. (2016). High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs. Electronics. 5(1). 12–12. 5 indexed citations

15.

Medjdoub, Farid, Riad Kabouche, B. Grimbert, et al.. (2015). High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure. Applied Physics Express. 8(10). 101001–101001. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact