Jr‐Tai Chen

751 citations

34 papers · 557 indexed · h-index 13

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 30
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 17
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 13
- Silicon Carbide Semiconductor Technologies 7
- Radio Frequency Integrated Circuit Design 3
Materials Chemistry
- ZnO doping and properties 8
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 6
Biomedical Engineering
- Acoustic Wave Resonator Technologies 3

Co-authors: Erik Janzén Urban Forsberg Niklas Rorsman Olof Kordina Mattias Thorsell Johan Bergsten Lars Hultman E.Ö. Sveinbjörnsson
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (5 papers)Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)
Partner nations: Sweden United States Iceland

In The Last Decade

Jr‐Tai Chen

33 papers receiving 543 citations

Peers

Countries citing papers authored by Jr‐Tai Chen

Since Specialization

Citations

This map shows the geographic impact of Jr‐Tai Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jr‐Tai Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jr‐Tai Chen more than expected).

Fields of papers citing papers by Jr‐Tai Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jr‐Tai Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jr‐Tai Chen. The network helps show where Jr‐Tai Chen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jr‐Tai Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jr‐Tai Chen Line = papers co-authored together Jr‐Tai Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect Materials ·Sophia Kouider,Philipp Kühne,B. Servin,Earl Struck,Sean Knight,Axel R. Persson,V. Stanishev,Jr‐Tai Chen,T. Paskova,M. Schubert,Vanya Darakchieva	2024	2
2	Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs IEEE Electron Device Letters ·JP Ordovás Baines,James W. Pomeroy,Jr‐Tai Chen,Martin Kuball	2024	1
3	Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Canon Lau,Fabiana Rampazzo,Carlo De Santi,Gracia Aída Herrera González,Gaudenzio Meneghesso,Matteo Meneghini,H. Blanck,Fang Ti-jun,R Rozman,Ding-Yuan Chen,Ph. Berge,Jr‐Tai Chen,Enrico Zanoni	2023	5
4	Observations of very fast electron traps at SiC/high-κ dielectric interfaces APL Materials ·Sulaiman Abdul Aziz,Axel R. Persson,Jr‐Tai Chen,Daniel Haasmann,Jawad Ul‐Hassan,Sima Dimitrijev,Niklas Rorsman,Vanya Darakchieva,E.Ö. Sveinbjörnsson	2023	0
5	Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ·Tatyana V. Varduni,Diane E. Sonefeld,Jr‐Tai Chen,Dana Weinstein	2023	12
6	Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics ·B. Servin,A. Kakanakova‐Georgieva,E.Ö. Sveinbjörnsson,Axel R. Persson,Camilo Andrés Benítez Peláez,Niklas Rorsman,V. Stanishev,Gambro-Dialysatoren GmbH & Co. KG,Per O. Å. Persson,Muhammad Asif Nawaz,Jr‐Tai Chen,T. Paskova,Vanya Darakchieva	2022	20
7	GaN-on-SiC Surface Acoustic Wave Devices Up to 14.3 GHz Tatyana V. Varduni,Diane E. Sonefeld,Jr‐Tai Chen,Dana Weinstein	2022	6
8	Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance Semiconductor Science and Technology ·Ding-Yuan Chen,Axel R. Persson,Francisco Dias Caetano,R Rozman,Fang Ti-jun,H. Blanck,Mattias Thorsell,Olof Kordina,Vanya Darakchieva,Per O. Å. Persson,Jr‐Tai Chen,Niklas Rorsman	2022	13
9	AlGaN/GaN/AlN ‘Buffer-Free’ High Voltage MISHEMTs with Si-rich and Stoichiometric SiN_x First Passivation Chalmers Research (Chalmers University of Technology) ·Camilo Andrés Benítez Peláez,Mattias Thorsell,Jr‐Tai Chen,Niklas Rorsman	2022	2
10	On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics ·Earl Struck,Ingemar Persson,B. Servin,Jr‐Tai Chen,Per O. Å. Persson,T. Paskova,Vanya Darakchieva	2022	7
11	Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures physica status solidi (a) ·Ding-Yuan Chen,Ph. Berge,Mattias Thorsell,M. Lorenzini,Hans Hjelmgren,Jr‐Tai Chen,Niklas Rorsman	2022	9
12	Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress Microelectronics Reliability ·Canon Lau,Fabiana Rampazzo,Matteo Meneghini,Nicola Modolo,Carlo De Santi,H. Blanck,U. Brauchle,R Rozman,Fang Ti-jun,Olof Kordina,Jr‐Tai Chen,De Sa Mere,C. Lacam,S. Piotrowicz,Gaudenzio Meneghesso,Enrico Zanoni	2021	4
13	A GaN–SiC hybrid material for high-frequency and power electronics Applied Physics Letters ·Jr‐Tai Chen,Johan Bergsten,Jun Lu,Erik Janzén,Mattias Thorsell,Lars Hultman,Niklas Rorsman,Olof Kordina	2018	64
14	Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices ECS Transactions ·Jr‐Tai Chen,Erik Janzén,Niklas Rorsman,Mattias Thorsell,Mats R. Andersson,Olof Kordina	2016	2
15	Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates Journal of Applied Physics ·Jr‐Tai Chen,Chih‐Wei Hsu,Urban Forsberg,Erik Janzén	2015	12
16	MOCVD growth of GaN-based high electron mobility transistor structures Linköping University Electronic Press eBooks ·Jr‐Tai Chen	2015	1
17	Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure Applied Physics Letters ·Jr‐Tai Chen,Ingemar Persson,Daniel Nilsson,Chih‐Wei Hsu,Justinas Pališaitis,Urban Forsberg,Per O. Å. Persson,Erik Janzén	2015	50
18	High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure <sup>28</sup>Si<sup>12</sup>C, Natural and <sup>13</sup>C – Enriched 4H-SiC Materials science forum ·Ivan G. Ivanov,Xintian Wang,Björn Lundqvist,Jr‐Tai Chen,Jawad Ul‐Hassan,晋哉佐藤,N. Tomara,Nguyên Tiên Són,Joel W. Ager,Laurence Jassongne,Erik Janzén	2014	10
19	Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization Bristol Research (University of Bristol) ·James W. Pomeroy,Niklas Rorsman,Jr‐Tai Chen,Urban Forsberg,Erik Janzén,Martin Kuball	2013	4
20	Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns Optics Express ·Pai‐Chun Wei,Surojit Chattopadhyay,Zihao Zhu,Ubirajara de Oliveira Barroso Júnior,Shyankay Jou,Jr‐Tai Chen,Amrit Shrestha,Hsu‐Cheng Hsu,Han‐Chang Shih,Kuei‐Hsien Chen,Li–Chyong Chen	2009	16

About Jr‐Tai Chen

Jr‐Tai Chen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 34 papers that have together received 557 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Ga2O3 and related materials (17 papers), Semiconductor materials and devices (13 papers), ZnO doping and properties (8 papers), Silicon Carbide Semiconductor Technologies (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Radio Frequency Integrated Circuit Design (3 papers) and Acoustic Wave Resonator Technologies (3 papers). The work is most often cited by research in Condensed Matter Physics (469 citations), Electronic, Optical and Magnetic Materials (258 citations), Electrical and Electronic Engineering (336 citations), Materials Chemistry (186 citations) and Atomic and Molecular Physics, and Optics (120 citations). Jr‐Tai Chen has collaborated with scholars based in Sweden, United States and Iceland. Frequent co-authors include Erik Janzén, Urban Forsberg, Niklas Rorsman, Olof Kordina, Mattias Thorsell, Johan Bergsten, Lars Hultman, E.Ö. Sveinbjörnsson, Per O. Å. Persson and Anna Malmros. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Semiconductor Science and Technology.

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