E. Chartier

729 total citations
50 papers, 513 citations indexed

About

E. Chartier is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Chartier has authored 50 papers receiving a total of 513 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 29 papers in Condensed Matter Physics and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Chartier's work include Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (29 papers) and Semiconductor Quantum Structures and Devices (17 papers). E. Chartier is often cited by papers focused on Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (29 papers) and Semiconductor Quantum Structures and Devices (17 papers). E. Chartier collaborates with scholars based in France, United Kingdom and Germany. E. Chartier's co-authors include S.L. Delage, C. Brylinski, C. Dua, O. Noblanc, S. Piotrowicz, C. Arnodo, D. Floriot, H. Blanck, J. Jacquet and Olivier Jardel and has published in prestigious journals such as Applied Physics Letters, Frontiers in Plant Science and IEEE Transactions on Electron Devices.

In The Last Decade

E. Chartier

49 papers receiving 475 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Chartier France	13	476	293	156	53	27	50	513
Matt Jacob-Mitos United States	7	409 0.9×	217 0.7×	135 0.9×	59 1.1×	25 0.9×	10	443
L. Witkowski United States	11	371 0.8×	165 0.6×	203 1.3×	52 1.0×	17 0.6×	28	427
Hua-Quen Tserng United States	8	448 0.9×	396 1.4×	119 0.8×	93 1.8×	27 1.0×	16	501
Sudip Ghosh India	13	557 1.2×	538 1.8×	169 1.1×	74 1.4×	20 0.7×	26	611
S. Vitanov Austria	8	250 0.5×	298 1.0×	99 0.6×	92 1.7×	28 1.0×	13	325
Chunjiang Ren China	8	338 0.7×	322 1.1×	82 0.5×	37 0.7×	17 0.6×	16	368
Rafael Perez Martinez United States	8	267 0.6×	90 0.3×	97 0.6×	44 0.8×	18 0.7×	27	319
R. Behtash Germany	12	378 0.8×	364 1.2×	89 0.6×	62 1.2×	31 1.1×	21	412
A. Nanni Italy	11	552 1.2×	453 1.5×	165 1.1×	76 1.4×	48 1.8×	41	600
H.F.F. Jos Netherlands	9	374 0.8×	126 0.4×	155 1.0×	53 1.0×	19 0.7×	35	429

Countries citing papers authored by E. Chartier

Since Specialization

Citations

This map shows the geographic impact of E. Chartier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Chartier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Chartier more than expected).

Fields of papers citing papers by E. Chartier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Chartier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Chartier. The network helps show where E. Chartier may publish in the future.

Co-authorship network of co-authors of E. Chartier

This figure shows the co-authorship network connecting the top 25 collaborators of E. Chartier. A scholar is included among the top collaborators of E. Chartier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Chartier. E. Chartier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Piotrowicz, S., Piero Gamarra, E. Chartier, et al.. (2018). First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology. 1–3. 9 indexed citations

Piotrowicz, S., Piero Gamarra, C. Dua, et al.. (2017). InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. International Journal of Microwave and Wireless Technologies. 10(1). 39–46. 13 indexed citations

Aubry, R., J. Jacquet, M. Oualli, et al.. (2016). ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT. IEEE Electron Device Letters. 37(5). 629–632. 49 indexed citations

Piotrowicz, S., R. Aubry, E. Chartier, et al.. (2016). InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz. 69–72. 4 indexed citations

Jardel, Olivier, R. Aubry, E. Chartier, et al.. (2012). A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications. 11 indexed citations

Jardel, Olivier, et al.. (2010). GaN power MMICs for X-Band T/R modules. 17–20. 7 indexed citations

Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 505–508. 42 indexed citations

Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 13 indexed citations

Chartier, E., et al.. (2007). A dual-mode zero-IF receiver for dual-band CDMA cellular and GPS. 432–435. 1 indexed citations

10.

Floriot, D., et al.. (2005). Thermal management of power HBT in pulsed operating mode. 2005 European Microwave Conference. 4 pp.–1490. 5 indexed citations

11.

Aubry, R., J. Jacquet, E. Chartier, et al.. (2003). Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements. The European Physical Journal Applied Physics. 22(2). 77–82. 10 indexed citations

12.

Blanck, H., S.L. Delage, S. Cassette, et al.. (2002). High efficiency InGaP/GaAs HBT power amplifiers. 33. 115–119. 1 indexed citations

13.

Cassette, S., S.L. Delage, E. Chartier, et al.. (2001). Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability. Materials Science and Engineering B. 80(1-3). 279–283. 7 indexed citations

14.

Sydlo, C., H. L. Hartnagel, Viktor Krozer, et al.. (2001). Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. Microelectronics Reliability. 41(9-10). 1567–1571. 1 indexed citations

15.

Delage, S.L., M.A. diForte-Poisson, E. Chartier, et al.. (1999). High-performance collector-up InGaP/GaAs heterojunctionbipolar transistor with Schottky contact. Electronics Letters. 35(8). 670–672. 11 indexed citations

16.

Delage, S.L., et al.. (1997). Collector-up InGaP/GaAs-double heterojunction bipolartransistors with high f _max . Electronics Letters. 33(7). 634–636. 4 indexed citations

17.

Forte-Poisson, M.A. di, C. Brylinski, S.L. Delage, et al.. (1994). GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits. Materials Science and Engineering B. 28(1-3). 242–247. 8 indexed citations

18.

Plana, R., J. Graffeuil, S.L. Delage, et al.. (1992). Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor. Electronics Letters. 28(25). 2354–2356. 22 indexed citations

19.

Chartier, E., et al.. (1985). Dependence of A-Si:H Tfts Performances on Deposition and Process Parameters. MRS Proceedings. 53. 3 indexed citations

20.

Szydlo, N., et al.. (1982). High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes. Applied Physics Letters. 40(11). 988–990. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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