Yuuki Enatsu

532 total citations
14 papers, 461 citations indexed

About

Yuuki Enatsu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Yuuki Enatsu has authored 14 papers receiving a total of 461 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 8 papers in Electronic, Optical and Magnetic Materials and 7 papers in Electrical and Electronic Engineering. Recurrent topics in Yuuki Enatsu's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (7 papers). Yuuki Enatsu is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (7 papers). Yuuki Enatsu collaborates with scholars based in Japan and United States. Yuuki Enatsu's co-authors include Umesh K. Mishra, Chirag Gupta, S. Keller, Anchal Agarwal, Silvia H. Chan, Junqian Liu, Cory Lund, Geetak Gupta, Satoru Nagao and Hirotaka Ikeda and has published in prestigious journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth and IEEE Electron Device Letters.

In The Last Decade

Yuuki Enatsu

14 papers receiving 448 citations

Peers

Countries citing papers authored by Yuuki Enatsu

Since Specialization

Citations

This map shows the geographic impact of Yuuki Enatsu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuuki Enatsu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuuki Enatsu more than expected).

Fields of papers citing papers by Yuuki Enatsu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuuki Enatsu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuuki Enatsu. The network helps show where Yuuki Enatsu may publish in the future.

Co-authorship network of co-authors of Yuuki Enatsu

This figure shows the co-authorship network connecting the top 25 collaborators of Yuuki Enatsu. A scholar is included among the top collaborators of Yuuki Enatsu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuuki Enatsu. Yuuki Enatsu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

#	Work	Indexed citations
1	Recent progress of large size and low dislocation bulk GaN growth 2020 ·(unknown), (unknown), Yuji Kagamitani, Tae Mochizuki, Hirotaka Ikeda, Kenji Iso, Tatsuya Takahashi, (unknown), Yuuki Enatsu, Yusuke Tsukada, Satoru Izumisawa	20
2	Corrections to “<italic>In Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] 2018 ·IEEE Electron Device Letters ·Chirag Gupta, Cory Lund, Silvia H. Chan, Anchal Agarwal, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra	5
3	P–n junction diodes with polarization induced p-type graded In_xGa_1–xN layer 2017 ·Semiconductor Science and Technology ·Yuuki Enatsu, Chirag Gupta, S. Keller, Shuji Nakamura, Umesh K. Mishra	9
4	In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates 2017 ·IEEE Electron Device Letters ·Chirag Gupta, Cory Lund, Silvia H. Chan, Anchal Agarwal, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra	142
5	OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET 2016 ·IEEE Electron Device Letters ·Chirag Gupta, Silvia H. Chan, Yuuki Enatsu, Anchal Agarwal, S. Keller, Umesh K. Mishra	68
6	High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds 2016 ·Japanese Journal of Applied Physics ·Yusuke Tsukada, Yuuki Enatsu, Shuichi Kubo, Hirotaka Ikeda, K. Kurihara, Hajime Matsumoto, Satoru Nagao, (unknown), Kenji Fujito	34
7	Polarization induced three-dimensional hole gas in compositionally graded In_xGa₁₋ _xN layer 2016 ·Applied Physics Express ·Yuuki Enatsu, Chirag Gupta, Matthew A. Laurent, S. Keller, Shuji Nakamura, Umesh K. Mishra	9
8	Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD 2016 ·Semiconductor Science and Technology ·Anchal Agarwal, Chirag Gupta, Yuuki Enatsu, S. Keller, Umesh K. Mishra	14
9	High breakdown voltage p-n diodes on GaN on sapphire by MOCVD 2016 ·physica status solidi (a) ·Chirag Gupta, Yuuki Enatsu, Geetak Gupta, S. Keller, Umesh K. Mishra	50
10	Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels 2016 ·Applied Physics Express ·Chirag Gupta, Silvia H. Chan, Cory Lund, Anchal Agarwal, Onur S. Koksaldi, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra	47
11	A novel device design to lower the on-resistance in GaN trench MOSFETs 2016 ·Chirag Gupta, Silvia H. Chan, Yuuki Enatsu, Anchal Agarwal, S. Keller, Umesh K. Mishra	10
12	Selective-area growth of GaN on non- and semi-polar bulk GaN substrates 2014 ·Japanese Journal of Applied Physics ·(unknown), Hideto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu, Satoru Nagao	9
13	Selective Area Growth of Semipolar (2021) and (2021) GaN Substrates by Metalorganic Vapor Phase Epitaxy 2013 ·Japanese Journal of Applied Physics ·(unknown), Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu, Satoru Nagao	5
14	Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE 2010 ·Journal of Crystal Growth ·Yoshinao Kumagai, Yuuki Enatsu, (unknown), Y. Kubota, (unknown), Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu	39

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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