B. Reuters

561 citations

30 papers · 451 indexed · h-index 13

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 29
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 17
Electrical and Electronic Engineering
- Semiconductor materials and devices 11
- Silicon Carbide Semiconductor Technologies 4
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 6
Materials Chemistry
- ZnO doping and properties 8
Mechanics of Materials
- Metal and Thin Film Mechanics 6
Biomedical Engineering
- Acoustic Wave Resonator Technologies 4

Co-authors: H. Kalisch Andrei Vescan H. Hahn M. Heuken Alexander Pooth B. Holländer N. Ketteniss U. Breuer
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Semiconductor Science and Technology (4 papers)Journal of Crystal Growth (4 papers)Journal of Physics D Applied Physics (3 papers)
Partner nations: Germany Belarus Taiwan

In The Last Decade

B. Reuters

29 papers receiving 432 citations

Peers

Countries citing papers authored by B. Reuters

Since Specialization

Citations

This map shows the geographic impact of B. Reuters's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Reuters with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Reuters more than expected).

Fields of papers citing papers by B. Reuters

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Reuters. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Reuters. The network helps show where B. Reuters may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Reuters, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Reuters Line = papers co-authored together B. Reuters links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production Materials Science in Semiconductor Processing ·İpek ÖZALP,B. Reuters,Harold J. Tobin,Martin Behringer,Diana Elizabeth Leal Castañeda,B Minchev,Oliver Skibitzki,Thomas Schroeder	2017	4
2	Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures Journal of Applied Spectroscopy ·徐昀,Tatyana D. Gladysheva,Umashanker Gupta Chowdhory,Ahmed Y. Alyamani,В Л Лакомкин,K. Reinmuth,Meng Xiaozh,B. Reuters,H. Kalisch,M. Heuken,Andrei Vescan	2016	1
3	Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Journal of Crystal Growth ·E. V. Lutsenko,Tatyana D. Gladysheva,Umashanker Gupta Chowdhory,G. P. Yablonskii,Kim Scholtz,Hyangsook Park,Ahmed Y. Alyamani,Meng Xiaozh,H. Kalisch,B. Reuters,M. Heuken,Andrei Vescan,G. Naresh‐Kumar,C. Trager‐Cowan	2015	3
4	Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors Journal of Applied Physics ·H. Hahn,B. Reuters,J. Hughey,ايهاب فوزي البديوى,Fouad Benkhelifa,O. Ambacher,H. Kalisch,Andrei Vescan	2015	23
5	First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H. Hahn,B. Reuters,R.L. Zhang,Barbara Waldern,J. Hughey,H. Kalisch,Andrei Vescan	2014	43
6	Characterization of GaN-based p-channel device structures at elevated temperatures Semiconductor Science and Technology ·H. Hahn,B. Reuters,Alexander Pooth,H. Kalisch,Andrei Vescan	2014	12
7	Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates Journal of Crystal Growth ·B. Reuters,Rizza Megasari,H. Hahn,Samiha Chaguetmi,Anish H. Gandhi,M. Heuken,H. Kalisch,Andrei Vescan	2014	10
8	Insulating behavior of interfaces in regrown Al_0.23Ga_0.77N/GaN double heterostructures on Al_0.07Ga_0.93N back‐barrier templates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·B. Reuters,H. Hahn,H. Behmenburg,M. Heuken,H. Kalisch,Andrei Vescan	2013	3
9	First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors Japanese Journal of Applied Physics ·H. Hahn,B. Reuters,Alexander Pooth,聡白木,H. Kalisch,Andrei Vescan	2013	13
10	Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers Journal of Electronic Materials ·B. Reuters,Anish H. Gandhi,N. Ketteniss,H. Hahn,B. Holländer,M. Heuken,H. Kalisch,Andrei Vescan	2013	31
11	Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys Journal of Physics D Applied Physics ·Francisco M. Morales,José Mánuel,R. Garcı́a,B. Reuters,H. Kalisch,Andrei Vescan	2013	22
12	p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers IEEE Transactions on Electron Devices ·H. Hahn,B. Reuters,Alexander Pooth,B. Holländer,M. Heuken,H. Kalisch,Andrei Vescan	2013	64
13	Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices Semiconductor Science and Technology ·N. Ketteniss,Abdelrahman M. Askar,B. Reuters,聡白木,B. Holländer,H. Kalisch,Andrei Vescan	2012	11
14	Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy Journal of Applied Physics ·B. Reuters,Samiha Chaguetmi,Anish H. Gandhi,B. Holländer,M. Heuken,H. Kalisch,Andrei Vescan	2012	18
15	Irregular spectral position of E \|\| c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 Applied Physics Letters ·Meng Xiaozh,徐昀,Tatyana D. Gladysheva,B. Reuters,Vitaly Z. Zubialevich,Umashanker Gupta Chowdhory,G. P. Yablonskii,M. Heuken,H. Kalisch,Andrei Vescan	2011	4
16	Dielectric function and optical properties of quaternary AlInGaN alloys Journal of Applied Physics ·Kirina Boykova,B. Reuters,Vitowe Batch,H. Kalisch,M. Heuken,Andrei Vescan,Marcus Röppischer,Christoph Cobet,G. Gobsch,R. Goldhahn	2011	28
17	Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells Semiconductor Science and Technology ·Carsten Netzel,Meng Xiaozh,Tim Wernicke,B. Reuters,H. Kalisch,M. Heuken,Andrei Vescan,M. Weyers,Michael Kneissl	2011	10
18	Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Journal of Crystal Growth ·Meng Xiaozh,B. Reuters,Vitowe Batch,Ronan-Bentle Se,E. V. Lutsenko,G. P. Yablonskii,J. Woitok,M. Heuken,H. Kalisch,Rolf A. Jansen	2010	13
19	Epitaxy and characterisation of AlInGaN heterostructures for HEMT application Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Vitowe Batch,Meng Xiaozh,H. Behmenburg,J. Woitok,W. Zander,真下伸一,B. Reuters,J. Schubert,Andrei Vescan,M. Heuken,H. Kalisch,Rolf A. Jansen	2009	6
20	Impact of nitridation on structural and optical properties of MOVPE‐grown m‐plane GaN layers on LiAlO₂ Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Meng Xiaozh,Vitowe Batch,H. Behmenburg,B. Reuters,瑞希白尾,Ronan-Bentle Se,徐昀,Roger Piferrer,J. Woitok,Mitch M. C. Chou,M. Heuken,H. Kalisch,Rolf A. Jansen	2009	4

About B. Reuters

B. Reuters is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 30 papers that have together received 451 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (17 papers), Semiconductor materials and devices (11 papers), ZnO doping and properties (8 papers), Semiconductor Quantum Structures and Devices (6 papers), Metal and Thin Film Mechanics (6 papers), Acoustic Wave Resonator Technologies (4 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (423 citations), Electronic, Optical and Magnetic Materials (215 citations), Electrical and Electronic Engineering (229 citations), Atomic and Molecular Physics, and Optics (124 citations) and Materials Chemistry (130 citations). B. Reuters has collaborated with scholars based in Germany, Belarus and Taiwan. Frequent co-authors include H. Kalisch, Andrei Vescan, H. Hahn, M. Heuken, Alexander Pooth, B. Holländer, B. Holländer, N. Ketteniss, U. Breuer and R. Goldhahn. Their work appears in journals such as Semiconductor Science and Technology, Journal of Crystal Growth, Journal of Physics D Applied Physics, Journal of Applied Physics and Journal of Electronic Materials.

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