Xiujian Sun

558 total citations
38 papers, 408 citations indexed

About

Xiujian Sun is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Xiujian Sun has authored 38 papers receiving a total of 408 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Xiujian Sun's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (15 papers) and Ga2O3 and related materials (15 papers). Xiujian Sun is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (15 papers) and Ga2O3 and related materials (15 papers). Xiujian Sun collaborates with scholars based in China, United States and Türkiye. Xiujian Sun's co-authors include Qian Sun, Jianxun Liu, Hui Yang, Yu Zhou, Meixin Feng, Xiaolu Guo, Yaozong Zhong, Hongwei Gao, Yingnan Huang and Xiaoning Zhan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Xiujian Sun

34 papers receiving 389 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xiujian Sun China 12 320 273 162 144 86 38 408
S. Rennesson France 11 302 0.9× 270 1.0× 141 0.9× 146 1.0× 161 1.9× 28 457
Anders Lundskog Sweden 12 376 1.2× 272 1.0× 174 1.1× 142 1.0× 192 2.2× 22 493
Yiqiang Ni China 13 340 1.1× 225 0.8× 222 1.4× 65 0.5× 160 1.9× 42 426
Saadat Mishkat‐Ul‐Masabih United States 10 324 1.0× 253 0.9× 129 0.8× 142 1.0× 132 1.5× 16 428
Akihiro Satake Japan 9 304 0.9× 127 0.5× 112 0.7× 246 1.7× 162 1.9× 31 391
M. A. Khan United States 8 144 0.5× 139 0.5× 99 0.6× 94 0.7× 191 2.2× 15 335
Hryhorii Stanchu United States 12 130 0.4× 170 0.6× 85 0.5× 115 0.8× 123 1.4× 49 327
Pengyan Wen China 11 233 0.7× 144 0.5× 87 0.5× 185 1.3× 74 0.9× 35 327
Yueh-Chin Lin Taiwan 12 231 0.7× 324 1.2× 118 0.7× 102 0.7× 90 1.0× 52 402
B. Benbakhti United Kingdom 12 156 0.5× 305 1.1× 98 0.6× 66 0.5× 125 1.5× 39 412

Countries citing papers authored by Xiujian Sun

Since Specialization
Citations

This map shows the geographic impact of Xiujian Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiujian Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiujian Sun more than expected).

Fields of papers citing papers by Xiujian Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiujian Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiujian Sun. The network helps show where Xiujian Sun may publish in the future.

Co-authorship network of co-authors of Xiujian Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Xiujian Sun. A scholar is included among the top collaborators of Xiujian Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiujian Sun. Xiujian Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Jianxun, Xiujian Sun, Meixin Feng, et al.. (2024). 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region. Optics Express. 32(11). 19069–19069. 1 indexed citations
2.
Liu, Jianxun, Yingnan Huang, Xiujian Sun, et al.. (2024). Toward High-Performance AlGaN-Based UV-B LEDs: Engineering of the Strain Relaxation Process. Crystal Growth & Design. 24(9). 3672–3680. 3 indexed citations
3.
Zhou, Yu, Qian Li, Jianxun Liu, et al.. (2024). Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT. Semiconductor Science and Technology. 39(6). 65018–65018. 1 indexed citations
4.
Feng, Meixin, Chuanjie Li, Yongjun Tang, et al.. (2023). Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes. Journal of Physics D Applied Physics. 57(5). 55107–55107.
5.
Zhou, Yu, Qian Li, Jianxun Liu, et al.. (2023). Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. Applied Physics Letters. 123(20). 8 indexed citations
6.
Zhou, Yu, Jianxun Liu, Yaozong Zhong, et al.. (2023). GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base. IEEE Transactions on Electron Devices. 70(4). 1613–1621. 4 indexed citations
7.
Fan, Shizhao, Rong Liu, Yingnan Huang, et al.. (2022). Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging. Journal of Applied Physics. 132(10). 7 indexed citations
8.
Liu, Jianxun, Yu Zhou, Xiujian Sun, et al.. (2022). Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process. Applied Physics Express. 15(7). 75501–75501. 5 indexed citations
9.
Feng, Meixin, Rui Zhou, Yongjun Tang, et al.. (2022). Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100). ACS Photonics. 10(7). 2208–2215. 9 indexed citations
10.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2022). 1200-V GaN-on-Si Quasi-Vertical p-n Diodes. IEEE Electron Device Letters. 43(12). 2057–2060. 17 indexed citations
11.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2021). Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2. IEEE Transactions on Electron Devices. 68(11). 5682–5686. 29 indexed citations
12.
Guo, Xiaolu, Yaozong Zhong, Junlei He, et al.. (2021). High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination. IEEE Electron Device Letters. 42(4). 473–476. 49 indexed citations
13.
Guo, Xiaolu, Yaozong Zhong, Xin Chen, et al.. (2021). Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination. Applied Physics Letters. 118(24). 44 indexed citations
14.
Tang, Yongjun, Meixin Feng, Pengyan Wen, et al.. (2020). Degradation study of InGaN-based laser diodes grown on Si. Journal of Physics D Applied Physics. 53(39). 395103–395103. 5 indexed citations
15.
Liang, Fangzhou, Meixin Feng, Yingnan Huang, et al.. (2020). AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate. Optics Express. 28(12). 17188–17188. 31 indexed citations
16.
Liu, Jianxun, Qian Sun, Meixin Feng, et al.. (2020). Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping. Optics Express. 28(21). 32124–32124. 6 indexed citations
17.
Wang, Jin, Meixin Feng, Rui Zhou, et al.. (2020). Thermal characterization of electrically injected GaN-based microdisk lasers on Si. Applied Physics Express. 13(7). 74002–74002. 13 indexed citations
18.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si. ACS Photonics. 6(8). 2104–2109. 11 indexed citations
19.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). Performance improvement of InGaN-based laser grown on Si by suppressing point defects. Optics Express. 27(18). 25943–25943. 10 indexed citations
20.
Huang, Yingnan, Jianxun Liu, Xiujian Sun, et al.. (2019). Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm. 22(7). 1160–1165. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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