N. Michel

608 total citations
57 papers, 404 citations indexed

About

N. Michel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, N. Michel has authored 57 papers receiving a total of 404 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 13 papers in Condensed Matter Physics. Recurrent topics in N. Michel's work include Semiconductor Lasers and Optical Devices (29 papers), Photonic and Optical Devices (23 papers) and Semiconductor Quantum Structures and Devices (19 papers). N. Michel is often cited by papers focused on Semiconductor Lasers and Optical Devices (29 papers), Photonic and Optical Devices (23 papers) and Semiconductor Quantum Structures and Devices (19 papers). N. Michel collaborates with scholars based in France, Germany and United Kingdom. N. Michel's co-authors include M. Krakowski, Jens W. Tomm, M. Krakowski, Martin Hempel, M. Calligaro, Thomas Elsaesser, S.L. Delage, O. Parillaud, C. Lacam and Piero Gamarra and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

N. Michel

50 papers receiving 382 citations

Peers

N. Michel
Yongkun Sin United States
Armin Liero Germany
A E Drakin Russia
K. Wakao Japan
Mark DeVito United States
Huaijin Ren China
W.R. Hitchens United States
N. T. Moshegov Russia
L. K. Howard United Kingdom
Matt Grupen United States
Yongkun Sin United States
N. Michel
Citations per year, relative to N. Michel N. Michel (= 1×) peers Yongkun Sin

Countries citing papers authored by N. Michel

Since Specialization
Citations

This map shows the geographic impact of N. Michel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Michel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Michel more than expected).

Fields of papers citing papers by N. Michel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Michel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Michel. The network helps show where N. Michel may publish in the future.

Co-authorship network of co-authors of N. Michel

This figure shows the co-authorship network connecting the top 25 collaborators of N. Michel. A scholar is included among the top collaborators of N. Michel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Michel. N. Michel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lacam, C., N. Michel, M. Oualli, et al.. (2024). InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE. Applied Physics Letters. 125(1). 1 indexed citations
2.
3.
Delage, S.L., S. Piotrowicz, Piero Gamarra, et al.. (2018). InAlGaN/GaN HEMT technology for Ka band applications. 234–237. 2 indexed citations
4.
Piotrowicz, S., Piero Gamarra, E. Chartier, et al.. (2018). First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology. 1–3. 9 indexed citations
5.
Piotrowicz, S., Piero Gamarra, C. Dua, et al.. (2017). InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. International Journal of Microwave and Wireless Technologies. 10(1). 39–46. 13 indexed citations
6.
Aubry, R., J. Jacquet, M. Oualli, et al.. (2016). ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT. IEEE Electron Device Letters. 37(5). 629–632. 49 indexed citations
7.
Feng, Feng, H. Page, Richard V. Penty, et al.. (2012). Free space optical wireless communications using directly modulated two-electrode high brightness tapered laser diode. Electronics Letters. 48(5). 281–283. 8 indexed citations
8.
Bull, S., Jens W. Tomm, J. Nagle, et al.. (2012). Emulation of the operation and degradation of high-power laser bars using simulation tools. Semiconductor Science and Technology. 27(9). 94012–94012. 5 indexed citations
9.
Bull, S., Jens W. Tomm, J. Nagle, et al.. (2011). The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars. Applied Physics Letters. 98(24). 10 indexed citations
10.
Nikitichev, Daniil I., Yiming Ding, M. Calligaro, et al.. (2010). High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. Applied Physics B. 103(3). 609–613. 14 indexed citations
11.
Esquivias, I., J. M. G. Tijero, N. Michel, et al.. (2010). Simulation of high brightness tapered lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7616. 76161E–76161E. 3 indexed citations
12.
Penty, Richard V., I.H. White, N. Michel, et al.. (2009). Two-Electrode High Power Tapered Laser with up to 40.5 W/A Static Modulation Efficiency and 700 Mb/s Direct Modulation Capability. OThT8–OThT8. 4 indexed citations
13.
Michel, N., M. Calligaro, M. Lecomte, et al.. (2009). High-brightness tapered lasers with an Al-free active region at 1060 nm. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7230. 72301D–72301D. 4 indexed citations
14.
Michel, N., Gilbert L. Bourdet, M. Lecomte, et al.. (2008). Very compact external cavity diffraction-coupled tapered laser diodes. Applied Optics. 47(6). 746–746. 12 indexed citations
15.
Michel, N., M. Calligaro, M. Lecomte, et al.. (2008). Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6909. 69090R–69090R. 1 indexed citations
16.
Michel, N., M. Lecomte, O. Parillaud, et al.. (2008). High-wall plug efficiency broad area laser bar with strain-compensated quantum well. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 103–104. 1 indexed citations
17.
18.
Michel, N., et al.. (2007). In-phase coherent coupling of tapered lasers in an external Talbot cavity. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6485. 64850E–64850E. 5 indexed citations
19.
Bourdet, Gilbert L., et al.. (2007). High-power, low-divergence, linear array of quasi-diffraction-limited beams supplied by tapered diodes. Applied Optics. 46(25). 6297–6297. 9 indexed citations
20.
Williams, Kevin, RV Penty, I.H. White, et al.. (2006). Monolithic integration of collimating Fresnel lens for beam quality enhancement in tapered high power laser diode - art. no. 61040L. Cambridge University Engineering Department Publications Database.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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