P. Ruterana

5.2k total citations
291 papers, 4.4k citations indexed

About

P. Ruterana is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, P. Ruterana has authored 291 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 200 papers in Condensed Matter Physics, 154 papers in Electrical and Electronic Engineering and 105 papers in Materials Chemistry. Recurrent topics in P. Ruterana's work include GaN-based semiconductor devices and materials (193 papers), Semiconductor materials and devices (104 papers) and Metal and Thin Film Mechanics (90 papers). P. Ruterana is often cited by papers focused on GaN-based semiconductor devices and materials (193 papers), Semiconductor materials and devices (104 papers) and Metal and Thin Film Mechanics (90 papers). P. Ruterana collaborates with scholars based in France, United States and Germany. P. Ruterana's co-authors include G. Nouet, B. Bouhafs, V. Potin, K. Lorenz, H. Morkoç̌, Z. Dridi, E. Alves, S. Kret, M. P. Chauvat and Ph. Houdy and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

P. Ruterana

282 papers receiving 4.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Ruterana France 34 2.4k 2.0k 1.9k 1.3k 1.2k 291 4.4k
D. Cherns United Kingdom 37 1.5k 0.6× 2.1k 1.0× 2.7k 1.4× 1.2k 1.0× 577 0.5× 163 4.8k
Jean‐Luc Rouvière France 44 2.6k 1.1× 2.6k 1.3× 2.2k 1.1× 2.2k 1.7× 745 0.6× 198 5.7k
V. Cimalla Germany 39 1.9k 0.8× 3.3k 1.7× 2.8k 1.5× 1.1k 0.8× 702 0.6× 263 5.5k
K. Lorenz Portugal 35 2.7k 1.1× 2.2k 1.1× 2.3k 1.2× 703 0.6× 804 0.7× 306 4.8k
Travis J. Anderson United States 37 2.4k 1.0× 3.2k 1.6× 2.4k 1.2× 651 0.5× 479 0.4× 260 4.7k
K. Saarinen Finland 39 2.0k 0.8× 3.3k 1.7× 3.0k 1.6× 1.2k 1.0× 2.6k 2.1× 178 5.8k
E. Bustarret France 33 1.2k 0.5× 2.1k 1.1× 3.4k 1.8× 1.1k 0.9× 864 0.7× 160 4.7k
C. Kisielowski United States 27 1.2k 0.5× 1.6k 0.8× 3.6k 1.9× 1.0k 0.8× 457 0.4× 83 5.1k
Akio Yamamoto Japan 30 2.7k 1.1× 1.8k 0.9× 1.8k 0.9× 1.8k 1.4× 454 0.4× 190 4.3k
Filip Tuomisto Finland 37 1.3k 0.5× 2.4k 1.2× 3.6k 1.9× 610 0.5× 1.1k 0.9× 233 5.1k

Countries citing papers authored by P. Ruterana

Since Specialization
Citations

This map shows the geographic impact of P. Ruterana's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Ruterana with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Ruterana more than expected).

Fields of papers citing papers by P. Ruterana

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Ruterana. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Ruterana. The network helps show where P. Ruterana may publish in the future.

Co-authorship network of co-authors of P. Ruterana

This figure shows the co-authorship network connecting the top 25 collaborators of P. Ruterana. A scholar is included among the top collaborators of P. Ruterana based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Ruterana. P. Ruterana is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Mamor, M., et al.. (2024). Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics. Materials Science in Semiconductor Processing. 176. 108314–108314. 3 indexed citations
3.
Kuzmı́k, J., R. Stoklas, S. Hasenöhrl, et al.. (2024). InN/InAlN heterostructures for new generation of fast electronics. Journal of Applied Physics. 135(24).
4.
Béré, A., et al.. (2023). Structural and elastic properties of perovskite HoMnO3 crystal structures from ab-initio calculations. Computational Materials Science. 229. 112402–112402. 1 indexed citations
5.
Damilano, B., S. Vézian, M. P. Chauvat, et al.. (2022). Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence. Journal of Applied Physics. 132(3).
6.
Vézian, S., Magali Morales, P. Ruterana, et al.. (2022). Porous Nitride Light-Emitting Diodes. ACS Photonics. 9(4). 1256–1263. 4 indexed citations
7.
Luo, Kaiyi, Wenyu Hu, Qiuping Zhang, et al.. (2021). Exploration of irradiation intensity dependent external in-band quantum yield for ZnO and CuO/ZnO photocatalysts. Physical Chemistry Chemical Physics. 23(18). 10768–10779. 5 indexed citations
8.
Ruterana, P., et al.. (2020). Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission. Journal of Applied Physics. 128(22). 11 indexed citations
9.
Ruterana, P., et al.. (2020). Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation. Journal of Physics D Applied Physics. 54(1). 15305–15305. 5 indexed citations
10.
Hasenöhrl, S., Edmund Dobročka, M. P. Chauvat, et al.. (2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied Physics. 125(10). 12 indexed citations
11.
Hasenöhrl, S., et al.. (2018). Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures. Applied Physics Express. 12(1). 14001–14001. 4 indexed citations
12.
Chen, Xu, Hanbin Wang, Houzhao Wan, et al.. (2018). Core/shell Cu/FePtCu nanoparticles with face-centered tetragonal texture: An active and stable low-Pt catalyst for enhanced oxygen reduction. Nano Energy. 54. 280–287. 26 indexed citations
13.
Minj, Albert, M. P. Chauvat, Piero Gamarra, et al.. (2017). The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template. Journal of Microscopy. 268(3). 269–275. 5 indexed citations
14.
Wang, Hanbin, Xu Chen, Dan Shu, et al.. (2016). Effect of Cu doping on the structure and phase transition of directly synthesized FePt nanoparticles. Journal of Magnetism and Magnetic Materials. 422. 470–474. 19 indexed citations
15.
Vasundhara, М., Laurence Méchin, Bruno Guillet, et al.. (2014). Influence of fabrication steps on optical and electrical properties of InN thin films. Archivo Digital UPM (Universidad Politécnica de Madrid). 1 indexed citations
16.
Dierolf, Volkmar, et al.. (2009). Rare-earth doping of advanced materials for photonic applications : symposium held December 1-4, 2008, Boston, Massachusetts, U.S.A.. 1 indexed citations
17.
Ruterana, P., et al.. (2006). High resolution and analytical electron microscopy of ZnO layers doped with magnetic ions for spintronic applications. Optica Applicata. 36. 311–320. 1 indexed citations
18.
Ruterana, P., et al.. (1990). Structure and composition of 30-80A thick PtSi films on (100) Si. Clinical Imaging. 20. 382–386. 1 indexed citations
19.
Ruterana, P., P. A. Buffat, Michael R. Prairie, & Albert Renken. (1989). The structure of the sodium molybdate (Na2MoO4) catalyst for water free dehydrogenation of methanol to formaldehyde. Helvetica physica acta. 62. 227–230. 1 indexed citations
20.
Ganière, JD, et al.. (1989). Characterization by transmission electron microscopy of wedge shaped semiconductor samples. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 14(6). 407–414. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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