S.S. Park

552 total citations
22 papers, 295 citations indexed

About

S.S. Park is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.S. Park has authored 22 papers receiving a total of 295 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.S. Park's work include GaN-based semiconductor devices and materials (11 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Semiconductor materials and devices (6 papers). S.S. Park is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Semiconductor materials and devices (6 papers). S.S. Park collaborates with scholars based in South Korea, United States and Taiwan. S.S. Park's co-authors include F. Ren, S. J. Pearton, Y.J. Park, J. W. Johnson, A.P. Zhang, Yoshihiro Irokawa, Kwang Hyeon Baik, S.K. Lee, G. C. B. Braga and Y. Park and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and Electronics Letters.

In The Last Decade

S.S. Park

18 papers receiving 287 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.S. Park South Korea	10	236	217	120	101	63	22	295
R. Li United States	7	307 1.3×	265 1.2×	98 0.8×	114 1.1×	68 1.1×	12	362
Gourab Dutta India	9	265 1.1×	240 1.1×	76 0.6×	155 1.5×	82 1.3×	28	331
Sreenidhi Turuvekere India	7	384 1.6×	347 1.6×	92 0.8×	165 1.6×	79 1.3×	15	429
Nitin Goyal Norway	8	260 1.1×	194 0.9×	81 0.7×	121 1.2×	85 1.3×	14	314
Yasunori Tateno Japan	12	244 1.0×	292 1.3×	83 0.7×	58 0.6×	55 0.9×	28	338
Fabio Alessio Marino Italy	10	319 1.4×	317 1.5×	103 0.9×	111 1.1×	53 0.8×	22	394
Hua-Quen Tserng United States	8	396 1.7×	448 2.1×	119 1.0×	93 0.9×	46 0.7×	16	501
Erdem Arkun United States	11	279 1.2×	284 1.3×	101 0.8×	114 1.1×	77 1.2×	27	370
N. Tipirneni United States	8	312 1.3×	312 1.4×	46 0.4×	122 1.2×	46 0.7×	16	365
L. Witkowski United States	11	165 0.7×	371 1.7×	203 1.7×	52 0.5×	71 1.1×	28	427

Countries citing papers authored by S.S. Park

Since Specialization

Citations

This map shows the geographic impact of S.S. Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.S. Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.S. Park more than expected).

Fields of papers citing papers by S.S. Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.S. Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.S. Park. The network helps show where S.S. Park may publish in the future.

Co-authorship network of co-authors of S.S. Park

This figure shows the co-authorship network connecting the top 25 collaborators of S.S. Park. A scholar is included among the top collaborators of S.S. Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.S. Park. S.S. Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Kim, Taeho, S.S. Park, Wanki Kim, et al.. (2025). Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer. IEEE Transactions on Electron Devices. 72(9). 4896–4901.

Lee, Sanghee, et al.. (2025). High-performance switchable visor for augmented reality using low-voltage, fast-response cholesteric liquid crystals. Dyes and Pigments. 243. 113068–113068.

Lee, Sangho, Hyojun Choi, S.S. Park, et al.. (2025). Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low V_th Variation. 1–3. 1 indexed citations

Park, S.S., et al.. (2024). Real-time monitoring system for 100 mJ laser shock peening. Optics and Lasers in Engineering. 178. 108248–108248. 3 indexed citations

Park, S.S., et al.. (2022). Study of the Change in Surface Wettability for Zircaloy-4 Utilizing Spatially Homogenized Nanosecond Laser Beam. Journal of Welding and Joining. 40(2). 156–164.

Park, S.S., et al.. (2007). High device yield and performance of InGaAsP MQW DFB lasers with absorptive grating. Electronics Letters. 43(20). 1095–1096. 1 indexed citations

Kang, Jaeku, Dongjae Shin, J.S. Lee, et al.. (2006). Uncooled$C$-Band Wide-Band Gain Lasers With 32-Channel Coverage and$-$20-dBm ASE Injection for WDM-PON. IEEE Photonics Technology Letters. 18(5). 667–669. 10 indexed citations

Reshchikov, M. A., Daming Huang, Lei He, et al.. (2005). Manifestation of edge dislocations in photoluminescence of GaN. Physica B Condensed Matter. 367(1-4). 35–39. 10 indexed citations

Irokawa, Yoshihiro, J. Kim, F. Ren, et al.. (2004). Si+ ion implanted MPS bulk GaN diodes. Solid-State Electronics. 48(5). 827–830. 9 indexed citations

10.

Mehandru, R., S. Kim, J. Kim, et al.. (2003). Thermal simulations of high power, bulk GaN rectifiers. Solid-State Electronics. 47(6). 1037–1043. 7 indexed citations

11.

Irokawa, Yoshihiro, B. Luo, B. S. Kang, et al.. (2003). 2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier. Solid-State Electronics. 48(2). 359–361. 2 indexed citations

12.

Baik, Kwang Hyeon, Yoshihiro Irokawa, F. Ren, et al.. (2003). Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers. Solid-State Electronics. 47(9). 1533–1538. 36 indexed citations

13.

Reshchikov, M. A., M. Zafar Iqbal, S.S. Park, et al.. (2003). Persistent photoluminescence in high-purity GaN. Physica B Condensed Matter. 340-342. 444–447. 10 indexed citations

14.

Park, S.S., et al.. (2002). Laminated bandpass filter using tapped resonators. Electronics Letters. 38(23). 1452–1453. 2 indexed citations

15.

Johnson, J. W., A.P. Zhang, F. Ren, et al.. (2002). Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers. IEEE Transactions on Electron Devices. 49(1). 32–36. 84 indexed citations

16.

Johnson, J. W., F. Ren, William D. Palmer, et al.. (2002). 1.6 A GaN Schottky rectifiers on bulk GaN substrates. Solid-State Electronics. 46(6). 911–913. 13 indexed citations

17.

Park, S.S., et al.. (2002). Device performance of SI-PBH DFB-LD with undulation of SL-MQW layers. 2. 421–422. 1 indexed citations

18.

Johnson, J. W., F. Ren, F. Ren, et al.. (2001). Schottky rectifiers fabricated on free-standing GaN substrates. Solid-State Electronics. 45(3). 405–410. 34 indexed citations

19.

Freitas, Jaime A., G. C. B. Braga, W. J. Moore, et al.. (2001). Structural and optical properties of thick freestanding GaN templates. Journal of Crystal Growth. 231(3). 322–328. 40 indexed citations

20.

Korostelin, Yu. V., V. I. Kozlovsky, A S Nasibov, et al.. (1998). Seeded vapour-phase free growth of ZnSe single crystals in the 〈1 0 0〉 direction. Journal of Crystal Growth. 184-185. 1010–1014. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact