D. Via

434 citations

23 papers · 352 · h-index 9

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 20
- Semiconductor materials and devices 12
- Radio Frequency Integrated Circuit Design 6
- Advancements in Semiconductor Devices and Circuit Design 5
- Electrostatic Discharge in Electronics 4
Condensed Matter Physics 14
- GaN-based semiconductor devices and materials 14

Co-authors: J. Gillespie (21 shared papers)S. J. Pearton (16 shared papers)F. Ren (16 shared papers)Robert Fitch (15 shared papers)T. Jenkins (21 shared papers)J. Sewell (17 shared papers)C. R. Abernathy (9 shared papers)R. Mehandru (8 shared papers)
Journals: Solid-State Electronics (6 papers)Applied Physics Letters (5 papers)Journal of The Electrochemical Society (1 paper)Electronics Letters (1 paper)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (1 paper)
Partner nations: United States Japan

In The Last Decade

D. Via

20 papers receiving 338 citations

Peers

Countries citing papers authored by D. Via

Since Specialization

Citations

This map shows the geographic impact of D. Via's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Via with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Via more than expected).

Fields of papers citing papers by D. Via

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Via. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Via. The network helps show where D. Via may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Via, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Via Line = papers co-authored together D. Via links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 23 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters ·R. Mehandru, B. Luo, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo	2003	116
2	Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Hung-Ta Wang, B. S. Kang, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, (unknown), C. R. Abernathy, S. J. Pearton	2005	43
3	Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of The Electrochemical Society ·B. Luo, R. Mehandru, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2002	38
4	Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization Applied Physics Letters ·B. Luo, F. Ren, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Albert G. Baca, R. D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, S. J. Pearton	2003	35
5	Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. S. Kang, R. Mehandru, S. Kim, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, (unknown), C. R. Abernathy, S. J. Pearton	2004	24
6	Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors Applied Physics Letters ·Robert Fitch, J. Gillespie, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, J. R. La Roche, F. Ren, S. J. Pearton	2004	22
7	Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, J. R. La Roche, F. Ren, S. J. Pearton	2004	13
8	Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, F. Ren, S. J. Pearton, Robert Fitch, Dennis E. Walker, Kelson D. Chabak, J. Gillespie, Mauricio Kossler, Manuel Trejo, D. Via, A. Crespo	2011	10
9	The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Solid-State Electronics ·B. Luo, R. Mehandru, Jihyun Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, R Dellmer, T. Jenkins, J. Sewell, D. Via, Antonio Crespo	2002	10
10	Small signal measurement of Sc2O3 AlGaN/GaN moshemts Solid-State Electronics ·B. Luo, R. Mehandru, B. S. Kang, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo	2003	8
11	Hydrogen sensors based on Sc ₂ O ₃ /AlGaN/GaN high electron mobility transistors Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·B. S. Kang, R. Mehandru, S. Kim, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, Antonio Crespo, Kwang Hyeon Baik, (unknown), C. R. Abernathy, S. J. Pearton	2005	5
12	Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·B. S. Kang, S. Kim, J. R. La Roche, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, S. J. Pearton	2004	5
13	Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on "Novel HBT with reduced thermal impedance" IEEE Microwave and Guided Wave Letters ·T. Jenkins, C. Bozada, R. Dettmer, J. Sewell, D. Via, J. Barrette, J. Ebel, G. DeSalvo, C. Havasy, L.L. Liou, T. Quach, J. Gillespie, C. Pettiford, C. Ito, K. Nakano, R. Anholt	1996	4
14	Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors Solid-State Electronics ·R. Anholt, C. Bozada, R. Dettmer, D. Via, T. Jenkins, J. Barrette, J. Ebel, C. Havasy, J. Sewell, T. Quach	1996	4
15	High three-terminal breakdown voltage and output power of Sc ₂ O ₃ passivated AlGaN/GaN high electron mobility transistors Electronics Letters ·B. Luo, R. Mehandru, Jihyun Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, Neil Moser, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo	2003	3
16	Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Solid-State Electronics ·J. Gillespie, Robert Fitch, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, M. A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, S. J. Pearton, F. Ren	2003	3
17	Base and collector resistances in heterojunction bipolar transistors Solid-State Electronics ·R. Anholt, C. Bozada, G. DeSalvo, R. Dettmer, J. Ebel, J. Gillespie, T. Jenkins, C. Havasy, C. Ito, K. Nakano, C. Pettiford, T. Quach, J. Sewell, D. Via	1997	2
18	Emitter utilization in heterojunction bipolar transistors Solid-State Electronics ·T. Quach, T. Jenkins, J. Barrette, C. Bozada, Charles Cerny, G. DeSalvo, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy, C. Ito, K. Nakano, C. Pettiford, J. Sewell, D. Via, R. Anholt	1997	2
19	Effect of device layout on the thermal resistance of high-power thermally-shunted heterojunction bipolar transistors R. Dettmer, T. Jenkins, J. Barrette, C. Bozada, G. DeSalvo, J. Ebel, J. Gillespie, C. Havasy, C. Ito, K. Nakano, C. Pettiford, T. Quach, J. Sewell, D. Via, R. Anholt	2002	2
20	Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface MRS Proceedings ·F. Ren, B. Luo, J. Kim, R. Mehandru, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2003	1

About D. Via

D. Via is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Bioengineering, having authored 23 papers that have together received 352 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (12 papers), Ga2O3 and related materials (9 papers), Radio Frequency Integrated Circuit Design (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Electrostatic Discharge in Electronics (4 papers), Metal and Thin Film Mechanics (3 papers) and ZnO doping and properties (2 papers). The work is most often cited by research in Condensed Matter Physics (278 citations), Electronic, Optical and Magnetic Materials (124 citations), Bioengineering (33 citations), Electrical and Electronic Engineering (310 citations) and Mechanics of Materials (51 citations). D. Via has collaborated with scholars based in United States and Japan. Frequent co-authors include J. Gillespie, S. J. Pearton, F. Ren, Robert Fitch, T. Jenkins, J. Sewell, C. R. Abernathy, R. Mehandru, B. Luo and A. Crespo. Their work appears in journals such as Solid-State Electronics, Applied Physics Letters, Journal of The Electrochemical Society, Electronics Letters and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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