D. Via

434 total citations
23 papers, 348 citations indexed

About

D. Via is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D. Via has authored 23 papers receiving a total of 348 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in D. Via's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). D. Via is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). D. Via collaborates with scholars based in United States and Japan. D. Via's co-authors include J. Gillespie, T. Jenkins, Robert Fitch, F. Ren, S. J. Pearton, J. Sewell, F. Ren, C. R. Abernathy, B. Luo and R. Mehandru and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Electronics Letters.

In The Last Decade

D. Via

20 papers receiving 334 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Via United States 9 307 274 122 80 51 23 348
J.-I. Chyi Taiwan 10 339 1.1× 324 1.2× 173 1.4× 105 1.3× 23 0.5× 20 410
A. Crespo United States 8 300 1.0× 288 1.1× 134 1.1× 127 1.6× 17 0.3× 10 357
Hongling Xiao China 10 187 0.6× 324 1.2× 182 1.5× 123 1.5× 73 1.4× 45 378
Claude Ahyi United States 10 272 0.9× 253 0.9× 139 1.1× 97 1.2× 16 0.3× 14 394
B. Cui United States 12 232 0.8× 370 1.4× 258 2.1× 205 2.6× 29 0.6× 23 446
Joachim Wuerfl Germany 10 379 1.2× 370 1.4× 158 1.3× 72 0.9× 12 0.2× 23 466
B. Peres United States 12 282 0.9× 347 1.3× 209 1.7× 100 1.3× 55 1.1× 21 401
Hai Lu United States 8 164 0.5× 359 1.3× 252 2.1× 193 2.4× 28 0.5× 16 444
T. Donchev Bulgaria 7 138 0.4× 98 0.4× 92 0.8× 136 1.7× 28 0.5× 42 257
Yoshiki Yano Japan 12 304 1.0× 434 1.6× 270 2.2× 139 1.7× 42 0.8× 33 471

Countries citing papers authored by D. Via

Since Specialization
Citations

This map shows the geographic impact of D. Via's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Via with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Via more than expected).

Fields of papers citing papers by D. Via

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Via. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Via. The network helps show where D. Via may publish in the future.

Co-authorship network of co-authors of D. Via

This figure shows the co-authorship network connecting the top 25 collaborators of D. Via. A scholar is included among the top collaborators of D. Via based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Via. D. Via is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Douglas, E, et al.. (2011). Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation. 48. 1–4. 1 indexed citations
2.
Liu, Lu, F. Ren, S. J. Pearton, et al.. (2011). Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 10 indexed citations
3.
Wang, Hung-Ta, B. S. Kang, F. Ren, et al.. (2005). Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 87(17). 43 indexed citations
4.
Kang, B. S., F. Ren, Robert Fitch, et al.. (2004). Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 2635–2639. 5 indexed citations
5.
Fitch, Robert, J. Gillespie, Neil Moser, et al.. (2004). Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 619–623. 13 indexed citations
6.
Fitch, Robert, J. Gillespie, Neil Moser, et al.. (2004). Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 84(9). 1495–1497. 22 indexed citations
7.
Kang, B. S., R. Mehandru, F. Ren, et al.. (2004). Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 84(23). 4635–4637. 24 indexed citations
8.
Ren, F., B. Luo, J. Kim, et al.. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. MRS Proceedings. 764. 1 indexed citations
9.
Luo, B., R. Mehandru, Jihyun Kim, et al.. (2003). High three-terminal breakdown voltage and output power of Sc 2 O 3 passivated AlGaN/GaN high electron mobility transistors. Electronics Letters. 39(10). 809–810. 3 indexed citations
10.
Gillespie, J., Robert Fitch, Neil Moser, et al.. (2003). Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers. Solid-State Electronics. 47(10). 1859–1862. 3 indexed citations
11.
Luo, B., R. Mehandru, B. S. Kang, et al.. (2003). Small signal measurement of Sc2O3 AlGaN/GaN moshemts. Solid-State Electronics. 48(2). 355–358. 7 indexed citations
12.
13.
Luo, B., R. Mehandru, Jihyun Kim, et al.. (2002). The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS. Solid-State Electronics. 46(12). 2185–2190. 10 indexed citations
14.
Jenkins, T., C. Bozada, G. DeSalvo, et al.. (2002). Power performance of thermally-shunted heterojunction bipolar transistors. 2. 949–952. 1 indexed citations
15.
Luo, B., R. Mehandru, F. Ren, et al.. (2002). Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. Journal of The Electrochemical Society. 149(11). G613–G613. 36 indexed citations
16.
Dettmer, R., T. Jenkins, C. Bozada, et al.. (2002). Effect of device layout on the thermal resistance of high-power thermally-shunted heterojunction bipolar transistors. 3. 1607–1610. 2 indexed citations
17.
Anholt, R., C. Bozada, G. DeSalvo, et al.. (1997). Base and collector resistances in heterojunction bipolar transistors. Solid-State Electronics. 41(11). 1739–1743. 2 indexed citations
18.
Quach, T., T. Jenkins, C. Bozada, et al.. (1997). Emitter utilization in heterojunction bipolar transistors. Solid-State Electronics. 41(9). 1303–1308. 2 indexed citations
19.
Anholt, R., C. Bozada, R. Dettmer, et al.. (1996). Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors. Solid-State Electronics. 39(7). 961–963. 4 indexed citations
20.
Jenkins, T., C. Bozada, R. Dettmer, et al.. (1996). Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on "Novel HBT with reduced thermal impedance". IEEE Microwave and Guided Wave Letters. 6(7). 268–269. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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