J.-I. Chyi

487 total citations
20 papers, 410 citations indexed

About

J.-I. Chyi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J.-I. Chyi has authored 20 papers receiving a total of 410 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J.-I. Chyi's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (8 papers). J.-I. Chyi is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (8 papers). J.-I. Chyi collaborates with scholars based in Taiwan, United States and Japan. J.-I. Chyi's co-authors include F. Ren, S. J. Pearton, F. Ren, C. R. Abernathy, B. Luo, Chang‐Cheng Chuo, Yoshihiro Irokawa, Tzer‐En Nee, J. W. Johnson and M. Ishiko and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

J.-I. Chyi

20 papers receiving 399 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.-I. Chyi Taiwan	10	339	324	173	105	76	20	410
D. Via United States	9	307 0.9×	274 0.8×	122 0.7×	80 0.8×	44 0.6×	23	348
Y. Smorchkova United States	9	197 0.6×	324 1.0×	153 0.9×	111 1.1×	117 1.5×	15	391
Claude Ahyi United States	10	272 0.8×	253 0.8×	139 0.8×	97 0.9×	130 1.7×	14	394
Joachim Wuerfl Germany	10	379 1.1×	370 1.1×	158 0.9×	72 0.7×	80 1.1×	23	466
Hai Lu United States	8	164 0.5×	359 1.1×	252 1.5×	193 1.8×	122 1.6×	16	444
Michael L. Schuette United States	12	492 1.5×	562 1.7×	247 1.4×	94 0.9×	175 2.3×	35	641
Chi-Chih Liao Taiwan	10	233 0.7×	232 0.7×	106 0.6×	158 1.5×	143 1.9×	28	437
Yoshiki Yano Japan	12	304 0.9×	434 1.3×	270 1.6×	139 1.3×	81 1.1×	33	471
Nitin Goyal Norway	8	194 0.6×	260 0.8×	121 0.7×	85 0.8×	81 1.1×	14	314
Y. Dikme Germany	12	200 0.6×	383 1.2×	170 1.0×	146 1.4×	142 1.9×	44	431

Countries citing papers authored by J.-I. Chyi

Since Specialization

Citations

This map shows the geographic impact of J.-I. Chyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-I. Chyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-I. Chyi more than expected).

Fields of papers citing papers by J.-I. Chyi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-I. Chyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-I. Chyi. The network helps show where J.-I. Chyi may publish in the future.

Co-authorship network of co-authors of J.-I. Chyi

This figure shows the co-authorship network connecting the top 25 collaborators of J.-I. Chyi. A scholar is included among the top collaborators of J.-I. Chyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.-I. Chyi. J.-I. Chyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chiu, Hsien‐Chin, et al.. (2014). N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. Microelectronics Reliability. 55(1). 48–51. 9 indexed citations

Chyi, J.-I., Ching‐Mei Hsu, Wei‐Lun Kao, et al.. (2013). Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids. Journal of Applied Physics. 114(20). 1 indexed citations

Hwang, J. S., et al.. (2012). GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy. Applied Physics Letters. 100(22). 16 indexed citations

Lin, Kuang‐I, et al.. (2009). Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure. Applied Physics Letters. 95(14). 3 indexed citations

Irokawa, Yoshihiro, Yoshitaka Nakano, M. Ishiko, et al.. (2004). MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied Physics Letters. 84(15). 2919–2921. 105 indexed citations

Kang, B. S., et al.. (2004). Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 710–714. 18 indexed citations

Wu, Hsiao‐Mei, et al.. (2004). Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. 406–407. 1 indexed citations

Irokawa, Yoshihiro, F. Ren, Kwang Hyeon Baik, et al.. (2004). Lateral schottky GaN rectifiers formed by Si+ ion implantation. Journal of Electronic Materials. 33(5). 426–430. 3 indexed citations

LaRoche, J. R., B. Luo, F. Ren, et al.. (2003). GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates. Solid-State Electronics. 48(1). 193–196. 14 indexed citations

10.

Irokawa, Yoshihiro, et al.. (2003). DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates. Electrochemical and Solid-State Letters. 7(1). G8–G8. 11 indexed citations

11.

Mehandru, R., B. Luo, B. S. Kang, et al.. (2003). AlGaN/GaN HEMT based liquid sensors. Solid-State Electronics. 48(2). 351–353. 56 indexed citations

12.

Irokawa, Yoshihiro, Jihyun Kim, F. Ren, et al.. (2003). Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes. Applied Physics Letters. 83(24). 4987–4989. 9 indexed citations

13.

Hong, M., et al.. (2002). Single crystal rare earth oxides epitaxially grown on GaN. 12. 495–500. 1 indexed citations

14.

Johnson, J. W., F. Ren, F. Ren, et al.. (2001). Schottky rectifiers fabricated on free-standing GaN substrates. Solid-State Electronics. 45(3). 405–410. 34 indexed citations

15.

Johnson, J. W., B. Luo, F. Ren, et al.. (2000). Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor. Applied Physics Letters. 77(20). 3230–3232. 83 indexed citations

16.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Spatial distribution of electrical properties in GaN p-i-n rectifiers. Solid-State Electronics. 44(9). 1591–1595. 4 indexed citations

17.

Dang, G., F. Ren, Jung Han, et al.. (2000). Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers. Solid-State Electronics. 44(7). 1157–1161. 12 indexed citations

18.

Dang, G., F. Ren, J.-I. Chyi, et al.. (2000). High breakdown voltage Au/Pt/GaN Schottky diodes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1135–1138. 21 indexed citations

19.

Hwang, J. S., et al.. (1999). Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure. Applied Physics Letters. 75(16). 2467–2469. 7 indexed citations

20.

Klem, John F., J.-I. Chyi, H. Morkoç̌, Y. E. Ihm, & N. Ōtsuka. (1988). Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 877. 35–35. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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