J.-I. Chyi

487 citations

20 papers · 410 indexed · h-index 10

Co-authors: F. Ren S. J. Pearton C. R. Abernathy B. Luo Chang‐Cheng Chuo Yoshihiro Irokawa Tzer‐En Nee J. W. Johnson
Topics: GaN-based semiconductor devices and materials (17 papers)Semiconductor materials and devices (12 papers)Ga2O3 and related materials (8 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Partner nations: Taiwan United States Japan

In The Last Decade

J.-I. Chyi

20 papers receiving 399 citations

Peers

Countries citing papers authored by J.-I. Chyi

Since Specialization

Citations

This map shows the geographic impact of J.-I. Chyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-I. Chyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-I. Chyi more than expected).

Fields of papers citing papers by J.-I. Chyi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-I. Chyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-I. Chyi. The network helps show where J.-I. Chyi may publish in the future.

Co-authorship network of co-authors of J.-I. Chyi

This figure shows the co-authorship network connecting the top 25 collaborators of J.-I. Chyi. A scholar is included among the top collaborators of J.-I. Chyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.-I. Chyi. J.-I. Chyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator 2014 ·Microelectronics Reliability ·Hsien‐Chin Chiu,(unknown),(unknown),J.-I. Chyi,(unknown)	9
2	Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids 2013 ·Journal of Applied Physics ·(unknown),(unknown),J.-I. Chyi,Ching‐Mei Hsu,(unknown),(unknown),Wei‐Lun Kao,D. J. Yao,Chia‐Hsien Hsu,(unknown),Chiing‐Chang Chen,Sheng‐Shian Li,J. Andrew Yeh,F. Ren,(unknown)	1
3	GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy 2012 ·Applied Physics Letters ·J. S. Hwang,(unknown),(unknown),(unknown),(unknown),Pei C. Chiu,J.-I. Chyi	16
4	Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure 2009 ·Applied Physics Letters ·Kuang‐I Lin,(unknown),(unknown),Changli Cheng,(unknown),J. S. Hwang,Pei C. Chiu,(unknown),J.-I. Chyi,(unknown)	3
5	MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors 2004 ·Applied Physics Letters ·Yoshihiro Irokawa,Yoshitaka Nakano,M. Ishiko,Tetsu Kachi,(unknown),F. Ren,F. Ren,A. H. Onstine,C. R. Abernathy,S. J. Pearton,(unknown),(unknown),J.-I. Chyi	105
6	Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates 2004 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·B. S. Kang,F. Ren,Yoshihiro Irokawa,(unknown),S. J. Pearton,(unknown),(unknown),J.-I. Chyi,(unknown),(unknown)	18
7	Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation 2004 ·Hsiao‐Mei Wu,(unknown),L.-H. Peng,(unknown),J.-I. Chyi,(unknown)	1
8	Lateral schottky GaN rectifiers formed by Si+ ion implantation 2004 ·Journal of Electronic Materials ·Yoshihiro Irokawa,(unknown),F. Ren,Kwang Hyeon Baik,F. Ren,C. R. Abernathy,S. J. Pearton,(unknown),(unknown),J.-I. Chyi	3
9	GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates 2003 ·Solid-State Electronics ·J. R. LaRoche,B. Luo,F. Ren,Kwang Hyeon Baik,(unknown),F. Ren,C. R. Abernathy,S. J. Pearton,A. Usikov,D. Tsvetkov,V. Soukhoveev,G. H. Gainer,(unknown),(unknown),(unknown),(unknown),J.-I. Chyi	14
10	DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates 2003 ·Electrochemical and Solid-State Letters ·Yoshihiro Irokawa,B. Luo,F. Ren,(unknown),(unknown),J.-I. Chyi,(unknown),(unknown),S. J. Pearton	11
11	AlGaN/GaN HEMT based liquid sensors 2003 ·Solid-State Electronics ·R. Mehandru,B. Luo,B. S. Kang,Jihyun Kim,F. Ren,S. J. Pearton,(unknown),(unknown),J.-I. Chyi	56
12	Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes 2003 ·Applied Physics Letters ·Yoshihiro Irokawa,Jihyun Kim,F. Ren,Kwang Hyeon Baik,F. Ren,C. R. Abernathy,S. J. Pearton,(unknown),(unknown),J.-I. Chyi	9
13	Single crystal rare earth oxides epitaxially grown on GaN 2002 ·M. Hong,A. R. Kortan,J. Kwo,J. P. Mannáerts,(unknown),J.-I. Chyi	1
14	Schottky rectifiers fabricated on free-standing GaN substrates 2001 ·Solid-State Electronics ·J. W. Johnson,(unknown),F. Ren,F. Ren,M. E. Overberg,C. R. Abernathy,J.-I. Chyi,Chang‐Cheng Chuo,Tzer‐En Nee,(unknown),K.P. Lee,S.S. Park,Y.J. Park,S. J. Pearton	34
15	Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor 2000 ·Applied Physics Letters ·J. W. Johnson,B. Luo,F. Ren,F. Ren,(unknown),C. R. Abernathy,S. J. Pearton,J.-I. Chyi,Tzer‐En Nee,(unknown),Chang‐Cheng Chuo	83
16	Spatial distribution of electrical properties in GaN p-i-n rectifiers 2000 ·Solid-State Electronics ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,(unknown),F. Ren,S. J. Pearton,J.-I. Chyi,Tzer‐En Nee,(unknown),Chang‐Cheng Chuo	4
17	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers 2000 ·Solid-State Electronics ·(unknown),G. Dang,F. Ren,Jung Han,(unknown),S. J. Pearton,J.-I. Chyi,Tzer‐En Nee,(unknown),Chang‐Cheng Chuo,S. N. G. Chu	12
18	High breakdown voltage Au/Pt/GaN Schottky diodes 2000 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·G. Dang,(unknown),(unknown),F. Ren,J.-I. Chyi,(unknown),Chang‐Cheng Chuo,(unknown),Jung Han,S. N. G. Chu,R. G. Wilson,X. A. Cao,S. J. Pearton	21
19	Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure 1999 ·Applied Physics Letters ·J. S. Hwang,(unknown),(unknown),(unknown),J.-I. Chyi,N. T. Yeh	7
20	Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure 1988 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·John F. Klem,J.-I. Chyi,H. Morkoç̌,Y. E. Ihm,N. Ōtsuka	2

About J.-I. Chyi

J.-I. Chyi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 20 papers that have together received 410 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (8 papers). The work is most often cited by research in Condensed Matter Physics (324 citations), Electronic, Optical and Magnetic Materials (173 citations) and Electrical and Electronic Engineering (339 citations). J.-I. Chyi has collaborated with scholars based in Taiwan, United States and Japan. Frequent co-authors include F. Ren, S. J. Pearton, F. Ren, C. R. Abernathy, B. Luo, Chang‐Cheng Chuo, Yoshihiro Irokawa, Tzer‐En Nee, J. W. Johnson and M. Ishiko. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact