E. S. Lambers

2.8k total citations · 1 hit paper
110 papers, 2.5k citations indexed

About

E. S. Lambers is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. S. Lambers has authored 110 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Electrical and Electronic Engineering, 53 papers in Materials Chemistry and 32 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. S. Lambers's work include Semiconductor materials and devices (64 papers), Plasma Diagnostics and Applications (31 papers) and ZnO doping and properties (26 papers). E. S. Lambers is often cited by papers focused on Semiconductor materials and devices (64 papers), Plasma Diagnostics and Applications (31 papers) and ZnO doping and properties (26 papers). E. S. Lambers collaborates with scholars based in United States, Romania and Germany. E. S. Lambers's co-authors include S. J. Pearton, F. Ren, D. P. Norton, V. Crăciun, Paul H. Holloway, C. R. Abernathy, Jamie C. Wang, Kenneth Hanson, F. Ren and Yan Zhou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. S. Lambers

110 papers receiving 2.4k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency

2017 560 citations Chenkun Zhou, Haoran Lin et al. Chemical Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. S. Lambers United States	25	1.9k	1.5k	512	353	324	110	2.5k
Peter Mascher Canada	25	2.3k 1.2×	2.4k 1.6×	789 1.5×	656 1.9×	549 1.7×	248	3.4k
Harm C. M. Knoops Netherlands	33	2.9k 1.5×	2.1k 1.4×	519 1.0×	324 0.9×	201 0.6×	78	3.3k
Katsutaka Sasaki Japan	20	840 0.5×	578 0.4×	380 0.7×	357 1.0×	288 0.9×	118	1.4k
A. Kakanakova‐Georgieva Sweden	33	1.2k 0.6×	1.4k 0.9×	594 1.2×	211 0.6×	454 1.4×	100	2.4k
Sadafumi Yoshida Japan	26	1.6k 0.8×	797 0.5×	665 1.3×	228 0.6×	623 1.9×	147	2.3k
K. Prabhakaran Japan	20	1.2k 0.6×	1.2k 0.8×	221 0.4×	142 0.4×	670 2.1×	78	2.1k
P. Capezzuto Italy	33	2.3k 1.3×	2.3k 1.5×	654 1.3×	228 0.6×	523 1.6×	169	3.5k
S. J. Pennycook United States	20	771 0.4×	1.5k 1.0×	727 1.4×	119 0.3×	203 0.6×	62	2.0k
J. Lančok Czechia	23	905 0.5×	1.1k 0.7×	297 0.6×	374 1.1×	210 0.6×	189	1.8k
Carsten Bundesmann Germany	20	1.5k 0.8×	2.2k 1.4×	883 1.7×	239 0.7×	141 0.4×	68	2.7k

Countries citing papers authored by E. S. Lambers

Since Specialization

Citations

This map shows the geographic impact of E. S. Lambers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. S. Lambers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. S. Lambers more than expected).

Fields of papers citing papers by E. S. Lambers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. S. Lambers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. S. Lambers. The network helps show where E. S. Lambers may publish in the future.

Co-authorship network of co-authors of E. S. Lambers

This figure shows the co-authorship network connecting the top 25 collaborators of E. S. Lambers. A scholar is included among the top collaborators of E. S. Lambers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. S. Lambers. E. S. Lambers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Fares, Chaker, Max Kneiß, Holger von Wenckstern, et al.. (2019). Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74. APL Materials. 7(7). 17 indexed citations

Fares, Chaker, Max Kneiß, Holger von Wenckstern, et al.. (2019). Band Alignment of Atomic Layer Deposited SiO₂ and Al₂O₃ on (Al_xGa_1-x)₂O₃ for x = 0.2-0.65. ECS Journal of Solid State Science and Technology. 8(6). P351–P356. 13 indexed citations

Crǎciun, D., Bogdan Ştefan Vasile, E. S. Lambers, Hisao Makino, & V. Crăciun. (2019). Microstructural investigations of 800 keV Ar ions irradiated nanocrystalline ZrN thin films. Surface Engineering. 36(3). 326–333. 5 indexed citations

Fares, Chaker, F. Ren, E. S. Lambers, et al.. (2018). Band Offsets for Atomic Layer Deposited HfSiO₄ on (Al_0.14Ga_0.86)₂O₃. ECS Journal of Solid State Science and Technology. 7(10). P519–P523. 8 indexed citations

Fares, Chaker, et al.. (2018). Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al _0.14 Ga _0.86 ) ₂ O ₃. Semiconductor Science and Technology. 34(2). 25006–25006. 9 indexed citations

Zhou, Chenkun, Haoran Lin, Yu Tian, et al.. (2017). Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency. Chemical Science. 9(3). 586–593. 560 indexed citations breakdown →

Chen, Yumin, et al.. (2017). Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness. Journal of The Electrochemical Society. 164(9). C563–C573. 50 indexed citations

Hays, David C., F. Ren, E. S. Lambers, S. J. Pearton, & F. Ren. (2015). Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures. Vacuum. 116. 60–64. 11 indexed citations

Douglas, E, F. Ren, V. Crăciun, et al.. (2014). Band Offsets in YSZ/InGaZnO4 Heterostructure System. Journal of Nanoscience and Nanotechnology. 14(5). 3925–3927. 6 indexed citations

10.

Rawal, S., E. S. Lambers, D. P. Norton, Tim Anderson, & Lisa McElwee‐White. (2006). Comparative study of HfNx and Hf–Ge–N copper diffusion barriers on Ge. Journal of Applied Physics. 100(6). 11 indexed citations

11.

Lambers, E. S., et al.. (2002). Effects of a Ni cap layer on transparent Ni/Au ohmic contacts to p-GaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1394–1401. 7 indexed citations

12.

Crăciun, V., E. S. Lambers, Nabil Bassim, Ronald H. Baney, & Rajiv K. Singh. (2001). Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(5). 2691–2694. 10 indexed citations

13.

Hahn, Yoon‐Bong, David C. Hays, H. Cho, et al.. (2000). Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs. Plasma Chemistry and Plasma Processing. 20(3). 405–415. 3 indexed citations

14.

Crăciun, V., E. S. Lambers, Nabil Bassim, R. K. Singh, & D. Crǎciun. (2000). Characteristics of ultraviolet-assisted pulsed-laser-deposited Y₂O₃ thin films. Journal of materials research/Pratt's guide to venture capital sources. 15(2). 488–494. 13 indexed citations

15.

Trivedi, Vishal, B. Luo, X. A. Cao, et al.. (2000). The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics. Solid-State Electronics. 44(12). 2101–2108. 5 indexed citations

16.

Maeda, Tatsuro, R. J. Shul, Jung‐Wuk Hong, et al.. (1999). Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries. Applied Surface Science. 143(1-4). 174–182. 42 indexed citations

17.

Lambers, E. S., S. J. Pearton, Mikael Östling, et al.. (1998). High rate etching of SiC and SiCN in NF3 inductively coupled plasmas. Solid-State Electronics. 42(5). 743–747. 24 indexed citations

18.

Abrams, Billie L., T. A. Trottier, H.C. Swart, E. S. Lambers, & P. H. Holloway. (1998). Electron Beam Degradation of Sulfide-Based Thin-Film Phosphors for Field Emission Flat Panel Displays. MRS Proceedings. 508. 5 indexed citations

19.

Jung, K. B., et al.. (1998). Cl2‐Based Inductively Coupled Plasma Etching of NiFe and Related Materials. Journal of The Electrochemical Society. 145(11). 4025–4028. 8 indexed citations

20.

Lampert, W. V., T. W. Haas, E. S. Lambers, & Paul H. Holloway. (1992). The Effects of Growth Sequence on the Electronic Properties of Al-Ge-Ni Ohmic Contacts on (001) GaAs. MRS Proceedings. 281. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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