M. A. Mastro
About
In The Last Decade
M. A. Mastro
25 papers receiving 369 citations
Peers
Comparison fields: 5 of 26
- Condensed Matter Physics 290
- Electrical and Electronic Engineering 191
- Materials Chemistry 165
- Electronic, Optical and Magnetic Materials 164
- Mechanics of Materials 78
Countries citing papers authored by M. A. Mastro
This map shows the geographic impact of M. A. Mastro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Mastro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Mastro more than expected).
Fields of papers citing papers by M. A. Mastro
This network shows the impact of papers produced by M. A. Mastro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Mastro. The network helps show where M. A. Mastro may publish in the future.
Co-authorship network of co-authors of M. A. Mastro
This figure shows the co-authorship network connecting the top 25 collaborators of M. A. Mastro. A scholar is included among the top collaborators of M. A. Mastro based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. A. Mastro. M. A. Mastro is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Title | Journal | Authors | Indexed citations |
|---|---|---|---|---|
| 1 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy | Applied Physics Letters | Neeraj Nepal, S. B. Qadri et al. | 47 |
| 2 | Transverse-microcavity modulation of photoluminescence from GaN nanowires | Applied Physics Letters | J. P. Long, Richard A. Flynn et al. | 3 |
| 3 | Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates | Journal of Applied Physics | Rachael L. Myers‐Ward, Brenda L. VanMil et al. | 6 |
| 4 | Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method | Physica E Low-dimensional Systems and Nanostructures | M. A. Mastro, Jaime A. Freitas et al. | 7 |
| 5 | Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC | Applied Physics Letters | Yoosuf N. Picard, M. E. Twigg et al. | 7 |
| 6 | X-ray diffraction study of crystal plane distortion in silicon carbide substrates | Journal of Applied Physics | M. A. Mastro, M. Fatemi et al. | 1 |
| 7 | Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system | Materials Science and Engineering B | M. A. Mastro, O. Kryliouk et al. | 2 |
| 8 | High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates | Applied Physics Letters | M. A. Mastro, R. T. Holm et al. | 23 |
| 9 | MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates | Journal of Crystal Growth | M. A. Mastro, Charles R. Eddy et al. | 35 |
| 10 | Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Seungeun Yeo, Sang‐Won Kang et al. | 23 |
| 11 | Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates | Journal of Crystal Growth | O. Kryliouk, M. A. Mastro et al. | 28 |
| 12 | Influence of polarity on GaN thermal stability | Journal of Crystal Growth | M. A. Mastro, O. Kryliouk et al. | 38 |
| 13 | AlGaN/GaN Structures Grown by HVPE: Growth and Characterization | MRS Proceedings | M. A. Mastro, D. Tsvetkov et al. | 6 |
| 14 | Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | A. Usikov, Dae Woo Kim et al. | 3 |
| 15 | RF performance of HVPE-grown AlGaN/GaN HEMTs | Solid-State Electronics | M. A. Mastro, D. Tsvetkov et al. | 10 |
| 16 | Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors | Solid-State Electronics | M. A. Mastro, D. Tsvetkov et al. | 18 |
| 17 | Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers | Solid-State Electronics | J. Gillespie, Robert Fitch et al. | 3 |
| 18 | Indium‐free violet LEDs grown by HVPE | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | A. Usikov, D. Tsvetkov et al. | 14 |
| 19 | Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2 | physica status solidi (a) | M. A. Mastro, O. Kryliouk et al. | 30 |
| 20 | GaN Substrates: Growth and Characterization | physica status solidi (a) | O. Kryliouk, M. A. Mastro et al. | 4 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.