M. A. Mastro

469 total citations
26 papers, 385 citations indexed

About

M. A. Mastro is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. A. Mastro has authored 26 papers receiving a total of 385 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. A. Mastro's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (9 papers) and Semiconductor materials and devices (9 papers). M. A. Mastro is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (9 papers) and Semiconductor materials and devices (9 papers). M. A. Mastro collaborates with scholars based in United States, South Korea and Russia. M. A. Mastro's co-authors include O. Kryliouk, Charles R. Eddy, R. T. Holm, Albert V. Davydov, A. J. Shapiro, Timothy J. Anderson, Jennifer K. Hite, S. B. Qadri, Nadeemullah A. Mahadik and Tim Anderson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. A. Mastro

25 papers receiving 369 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. A. Mastro United States 11 290 191 165 164 78 26 385
T. Aschenbrenner Germany 11 297 1.0× 109 0.6× 174 1.1× 149 0.9× 72 0.9× 31 393
Ł. Macht Netherlands 13 377 1.3× 202 1.1× 203 1.2× 197 1.2× 77 1.0× 23 434
G. Orsal France 12 316 1.1× 147 0.8× 189 1.1× 161 1.0× 109 1.4× 21 412
Takao Oto Japan 11 374 1.3× 153 0.8× 201 1.2× 180 1.1× 39 0.5× 27 481
K. H. Kim United States 7 448 1.5× 180 0.9× 202 1.2× 262 1.6× 75 1.0× 8 514
A. Ougazzaden France 9 218 0.8× 127 0.7× 161 1.0× 125 0.8× 74 0.9× 18 326
A. T. Winzer Germany 12 295 1.0× 136 0.7× 150 0.9× 161 1.0× 57 0.7× 25 404
S. Fritze Germany 8 372 1.3× 220 1.2× 222 1.3× 227 1.4× 58 0.7× 10 476
R. C. Tu Taiwan 11 312 1.1× 168 0.9× 222 1.3× 142 0.9× 65 0.8× 30 424
D. Sotta France 8 284 1.0× 129 0.7× 177 1.1× 117 0.7× 78 1.0× 16 351

Countries citing papers authored by M. A. Mastro

Since Specialization
Citations

This map shows the geographic impact of M. A. Mastro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Mastro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Mastro more than expected).

Fields of papers citing papers by M. A. Mastro

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. A. Mastro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Mastro. The network helps show where M. A. Mastro may publish in the future.

Co-authorship network of co-authors of M. A. Mastro

This figure shows the co-authorship network connecting the top 25 collaborators of M. A. Mastro. A scholar is included among the top collaborators of M. A. Mastro based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. A. Mastro. M. A. Mastro is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nepal, Neeraj, S. B. Qadri, Jennifer K. Hite, et al.. (2013). Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy. Applied Physics Letters. 103(8). 82110–82110. 47 indexed citations
2.
Long, J. P., Richard A. Flynn, I. Vurgaftman, et al.. (2010). Transverse-microcavity modulation of photoluminescence from GaN nanowires. Applied Physics Letters. 97(10). 3 indexed citations
3.
Myers‐Ward, Rachael L., Brenda L. VanMil, K.-K. Lew, et al.. (2010). Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates. Journal of Applied Physics. 108(5). 6 indexed citations
4.
Mastro, M. A., Jaime A. Freitas, Charles R. Eddy, et al.. (2008). Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method. Physica E Low-dimensional Systems and Nanostructures. 41(3). 487–489. 7 indexed citations
5.
Picard, Yoosuf N., M. E. Twigg, M. A. Mastro, et al.. (2007). Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC. Applied Physics Letters. 91(1). 7 indexed citations
6.
Mastro, M. A., M. Fatemi, D. Kurt Gaskill, et al.. (2006). X-ray diffraction study of crystal plane distortion in silicon carbide substrates. Journal of Applied Physics. 100(9). 1 indexed citations
7.
Mastro, M. A., O. Kryliouk, & Timothy J. Anderson. (2005). Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system. Materials Science and Engineering B. 127(1). 91–97. 2 indexed citations
8.
Mastro, M. A., R. T. Holm, Nabil Bassim, et al.. (2005). High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates. Applied Physics Letters. 87(24). 23 indexed citations
9.
Mastro, M. A., Charles R. Eddy, D. Kurt Gaskill, et al.. (2005). MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates. Journal of Crystal Growth. 287(2). 610–614. 35 indexed citations
10.
Yeo, Seungeun, et al.. (2005). Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2446–2449. 23 indexed citations
11.
Kryliouk, O., et al.. (2004). Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates. Journal of Crystal Growth. 274(1-2). 14–20. 28 indexed citations
12.
Mastro, M. A., O. Kryliouk, Timothy J. Anderson, Albert V. Davydov, & A. J. Shapiro. (2004). Influence of polarity on GaN thermal stability. Journal of Crystal Growth. 274(1-2). 38–46. 38 indexed citations
13.
Mastro, M. A., D. Tsvetkov, А. И. Печников, et al.. (2003). AlGaN/GaN Structures Grown by HVPE: Growth and Characterization. MRS Proceedings. 764. 6 indexed citations
14.
Usikov, A., Dae Woo Kim, А. И. Печников, et al.. (2003). Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2580–2584. 3 indexed citations
15.
Mastro, M. A., D. Tsvetkov, V. Soukhoveev, et al.. (2003). RF performance of HVPE-grown AlGaN/GaN HEMTs. Solid-State Electronics. 48(1). 179–182. 10 indexed citations
16.
Mastro, M. A., D. Tsvetkov, V. Soukhoveev, et al.. (2003). Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 47(6). 1075–1079. 18 indexed citations
17.
Gillespie, J., Robert Fitch, Neil Moser, et al.. (2003). Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers. Solid-State Electronics. 47(10). 1859–1862. 3 indexed citations
18.
Usikov, A., D. Tsvetkov, M. A. Mastro, et al.. (2003). Indium‐free violet LEDs grown by HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2265–2269. 14 indexed citations
19.
Mastro, M. A., et al.. (2001). Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2. physica status solidi (a). 188(1). 467–471. 30 indexed citations
20.
Kryliouk, O., et al.. (1999). GaN Substrates: Growth and Characterization. physica status solidi (a). 176(1). 407–410. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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