A. Y. Polyakov

9.6k citations

375 papers · 8.2k indexed · h-index 44

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 213
Electronic, Optical and Magnetic Materials top 0.2%
- Ga2O3 and related materials 217
Nuclear Energy and Engineering top 0.5%
Materials Chemistry top 1%
- ZnO doping and properties 158
Renewable Energy, Sustainability and the Environment top 1%
- Advanced Photocatalysis Techniques 56
Electrical and Electronic Engineering
- Semiconductor materials and devices 123
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 63
- Semiconductor materials and interfaces 31
Biomedical Engineering
- Photocathodes and Microchannel Plates 29

Co-authors: S. J. Pearton N. B. Smirnov F. Ren In‐Hwan Lee A. V. Govorkov E. B. Yakimov Ivan Shchemerov Jihyun Kim
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Nuclear Energy and Engineering
Journals: Journal of Applied Physics (65 papers)Applied Physics Letters (36 papers)ECS Journal of Solid State Science and Technology (33 papers)
Partner nations: Russia United States South Korea

In The Last Decade

A. Y. Polyakov

362 papers receiving 7.9k citations

Peers

Countries citing papers authored by A. Y. Polyakov

Since Specialization

Citations

This map shows the geographic impact of A. Y. Polyakov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Y. Polyakov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Y. Polyakov more than expected).

Fields of papers citing papers by A. Y. Polyakov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Y. Polyakov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Y. Polyakov. The network helps show where A. Y. Polyakov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Y. Polyakov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Y. Polyakov Line = papers co-authored together A. Y. Polyakov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes Journal of Alloys and Compounds ·In‐Hwan Lee,Bärbel Kracke,Nilvanda dos Santos Magalhães,Alessia Schinardi,A.A. Vasil'ev,Barbara J. Allison,I S D Roberts,А. I. Kochkova,A. Y. Polyakov,S. J. Pearton	2024	2
2	Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth Advanced Materials Interfaces ·A. Y. Polyakov,In‐Hwan Lee,В. И. Николаев,Stephan Rudgard,Andrey Miakonkikh,M. P. Scheglov,E. B. Yakimov,Natalia Solovyeva,A.A. Vasil'ev,А. I. Kochkova,Ivan Shchemerov,А. В. Черных,S. J. Pearton	2023	8
3	Mechanism for Long Photocurrent Time Constants in α-Ga₂O₃ UV Photodetectors ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,А. V. Аlmaev,В. И. Николаев,А. И. Печников,Norman L.P. Low,A.A. Vasil'ev,E. B. Yakimov,А. I. Kochkova,Alfeus Giovani,Lorena Giraldo Aristizábal,S. J. Pearton	2023	11
4	Synthesis of thin single-crystalline α-Cr-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition Письма в журнал технической физики ·В. И. Николаев,Sylvie Weil,Myon Scholes,С. И. Степанов,A. V. Chikiryaka,M. P. Shcheglov,A. Y. Polyakov	2023	1
5	Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 Journal of Alloys and Compounds ·A. Y. Polyakov,A.A. Vasil'ev,Ivan Shchemerov,А. В. Черных,R.G. Renaldi,Mani Erfanian Abdoust,А. I. Kochkova,П. Б. Лагов,Andrey Miakonkikh,Yu. S. Pavlov,上妻由佳,In‐Hwan Lee,Andrej Kuznetsov,S. J. Pearton	2023	8
6	Transport and trap states in proton irradiated ultra-thick κ-Ga2O3 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Y. Polyakov,В. И. Николаев,А. И. Печников,E. B. Yakimov,П. Б. Лагов,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,А. В. Черных,In‐Hwan Lee,S. J. Pearton	2023	9
7	Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga ₂ O ₃ Films Doped with Sn and Grown by Halide Epitaxy ECS Journal of Solid State Science and Technology ·В. И. Николаев,A. Y. Polyakov,С. И. Степанов,А. И. Печников,E. B. Yakimov,А. В. Черных,A.A. Vasil'ev,Ivan Shchemerov,А. I. Kochkova,Célia Regina da Costa,Mingju Li,S. J. Pearton	2022	4
8	Communication—Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN ECS Journal of Solid State Science and Technology ·П. С. Вергелес,美枝井戸,A. Y. Polyakov,E. B. Yakimov,S. J. Pearton	2022	2
9	Point defect creation by proton and carbon irradiation of α-Ga2O3 Journal of Applied Physics ·A. Y. Polyakov,В. И. Николаев,И. Н. Мешков,Krzysztof Siemek,П. Б. Лагов,E. B. Yakimov,А. И. Печников,Liu Fa-jin,S. Wuchterl,Kerstin Christina Weißmann,Ivan Shchemerov,A.A. Vasil'ev,А. В. Черных,Eric Willaume,Shinta Julianti,Jianqiang Xia,Yu. S. Pavlov,上妻由佳,S. J. Pearton	2022	18
10	Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates APL Materials ·A. Y. Polyakov,В. И. Николаев,А. И. Печников,С. И. Степанов,E. B. Yakimov,M. P. Scheglov,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,А. В. Черных,A. V. Chikiryaka,S. J. Pearton	2022	25
11	Diffusion of dopants and impurities in β-Ga2O3 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ribhu Sharma,Mark E. Law,F. Ren,A. Y. Polyakov,S. J. Pearton	2021	46
12	Experimental estimation of electron–hole pair creation energy in β -Ga2O3 Applied Physics Letters ·E. B. Yakimov,A. Y. Polyakov,Ivan Shchemerov,N. B. Smirnov,A.A. Vasil'ev,П. С. Вергелес,E. E. Yakimov,А. В. Черных,F. Ren,S. J. Pearton	2021	45
13	Defect States Determining Dynamic Trapping-Detrapping in β-Ga₂O₃ Field-Effect Transistors ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,Ryan Sims,Sooyeoun Oh,S. J. Pearton,F. Ren,А. I. Kochkova,Jihyun Kim	2019	33
14	Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions Journal of Applied Physics ·A. Y. Polyakov,Sharon Meagher,I. Shchemerov,А. В. Черных,E. B. Yakimov,А. I. Kochkova,Jiancheng Yang,Chaker Fares,F. Ren,S. J. Pearton	2019	3
15	Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga₂O₃ (Mg) ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,S. J. Pearton,F. Ren,А. В. Черных,D. Gogova,А. I. Kochkova	2019	47
16	Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Journal of Applied Physics ·A. Y. Polyakov,Camille Haller,N. B. Smirnov,P Duffaut,Ivan Shchemerov,Ryan Sims,Nilvanda dos Santos Magalhães,П. Б. Лагов,Yu. S. Pavlov,J.‐F. Carlin,Mauro Mosca,R. Butté,N. Grandjean,S. J. Pearton	2019	21
17	Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si APL Materials ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,S. J. Pearton,F. Ren,А. В. Черных,П. Б. Лагов,T. V. Kulevoy	2018	101
18	Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) Applied Physics Letters ·A. Y. Polyakov,Sharon Meagher,Ivan Shchemerov,S. J. Pearton,F. Ren,А. В. Черных,А. I. Kochkova	2018	88
19	Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy Applied Physics Letters ·In‐Hwan Lee,A. Y. Polyakov,E. B. Yakimov,N. B. Smirnov,Ivan Shchemerov,С. А. Тарелкин,S. Didenko,Margarethe Rothenberger,野田一六,S. J. Pearton	2017	28
20	Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy Journal of Applied Physics ·A. Y. Polyakov,N. B. Smirnov,E. B. Yakimov,In‐Hwan Lee,S. J. Pearton	2016	26

About A. Y. Polyakov

A. Y. Polyakov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Nuclear Energy and Engineering, having authored 375 papers that have together received 8.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (217 papers), GaN-based semiconductor devices and materials (213 papers), ZnO doping and properties (158 papers), Semiconductor materials and devices (123 papers), Semiconductor Quantum Structures and Devices (63 papers), Advanced Photocatalysis Techniques (56 papers), Semiconductor materials and interfaces (31 papers) and Photocathodes and Microchannel Plates (29 papers). The work is most often cited by research in Condensed Matter Physics (4.0k citations), Electronic, Optical and Magnetic Materials (4.6k citations) and Nuclear Energy and Engineering (69 citations). A. Y. Polyakov has collaborated with scholars based in Russia, United States and South Korea. Frequent co-authors include S. J. Pearton, N. B. Smirnov, F. Ren, In‐Hwan Lee, A. V. Govorkov, E. B. Yakimov, Ivan Shchemerov, Jihyun Kim, A. G. Milnes and Marek Skowroński. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, ECS Journal of Solid State Science and Technology, Solid-State Electronics and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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