D. Gregušová

1.9k citations

113 papers · 1.6k indexed · h-index 23

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 72
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 45
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 62
- Advancements in Semiconductor Devices and Circuit Design 9
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 17
- Magnetic properties of thin films 9
Materials Chemistry top 10%
- ZnO doping and properties 12
Mechanics of Materials
- Metal and Thin Film Mechanics 11

Co-authors: P. Kordoš R. Stoklas J. Novák K. Čičo J. Kuzmı́k M. Ťapajna Tamotsu Hashizume Š. Haščı́k
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (19 papers)Semiconductor Science and Technology (11 papers)Applied Surface Science (6 papers)
Partner nations: Slovakia Germany Japan

In The Last Decade

D. Gregušová

106 papers receiving 1.6k citations

Peers

Countries citing papers authored by D. Gregušová

Since Specialization

Citations

This map shows the geographic impact of D. Gregušová's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Gregušová with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Gregušová more than expected).

Fields of papers citing papers by D. Gregušová

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Gregušová. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Gregušová. The network helps show where D. Gregušová may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Gregušová, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Gregušová Line = papers co-authored together D. Gregušová links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Growth and performance of n++ GaN cap layer for HEMTs applications Materials Science in Semiconductor Processing ·J. Kuzmı́k,M. Blaho,D. Gregušová,P. Eliáš,N. Canas-Estrada,S. Hasenöhrl,Š. Haščı́k,Filip Gucmann,Jianguo Xu,Edmund Dobročka,A.J. Roggeveen,Г. Константинидис	2024	2
2	InN/InAlN heterostructures for new generation of fast electronics Journal of Applied Physics ·J. Kuzmı́k,R. Stoklas,S. Hasenöhrl,Edmund Dobročka,Daniela McAllister Harker,P. Eliáš,Filip Gucmann,D. Gregušová,Š. Haščı́k,A. A. Drozdovsky,M. P. Chauvat,S. Kret,P. Ruterana	2024	0
3	Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off ACS Applied Electronic Materials ·Filip Gucmann,Mark Pedersen,Aleš Chvála,R. Kúdela,Chao Yuan,M. Ťapajna,Oliver Williams,N. M. L. SOARES,P. Eliáš,OM Rueda,Jaroslav Kováč,J. Fedor,D. Gregušová	2024	3
4	Mg Doping of N-Polar, In-Rich InAlN Materials ·J. Kuzmı́k,N. Canas-Estrada,S. Hasenöhrl,M. Blaho,R. Stoklas,Edmund Dobročka,A. Rosová,Daniela McAllister Harker,Filip Gucmann,D. Gregušová,M. Precner,Á. Vincze	2023	2
5	Vertical GaN Transistor with Semi‐Insulating Channel physica status solidi (a) ·Jannicke Cathrine Wold Rød,R. Stoklas,S. Hasenöhrl,D. Gregušová,M. Ťapajna,Boris Hudec,Š. Haščı́k,Tamotsu Hashizume,Aleš Chvála,A. Šatka,J. Kuzmı́k	2023	1
6	Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer Semiconductor Science and Technology ·M. Mikulics,P. Kordoš,D. Gregušová,Š. Gaži,J. Novák,Zdeněk Sofer,Joachim Mayer,H. Hardtdegen	2021	4
7	InN: Breaking the limits of solid-state electronics AIP Advances ·J. Kuzmı́k,A. Adikimenakis,M. Ťapajna,D. Gregušová,Š. Haščı́k,Edmund Dobročka,K. Tsagaraki,R. Stoklas,A. Georgakilas	2021	8
8	Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement Applied Physics Letters ·M. Mikulics,P. Kordoš,D. Gregušová,Zdeněk Sofer,A. Winden,大高理,J. Moers,Joachim Mayer,H. Hardtdegen	2021	26
9	InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region Japanese Journal of Applied Physics ·D. Gregušová,L. Tóth,N. Canas-Estrada,S. Hasenöhrl,Š. Haščı́k,Ildikó Cora,Zsolt Fogarassy,R. Stoklas,Mohammad Illyas Sidik,M. Blaho,В. В. Лобанов,Caroline Oliveira Andrino,B. Pécz,Tamotsu Hashizume,J. Kuzmı́k	2019	2
10	Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures Materials Science in Semiconductor Processing ·M. Ťapajna,謙一四宮,Filip Gucmann,K. Hušeková,D. Gregušová,Tamotsu Hashizume,J. Kuzmı́k	2018	5
11	Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations IEEE Transactions on Electron Devices ·Aleš Chvála,В. А. Михеев,Juraj Marek,H. N. Rydon,D. Donoval,M. Blaho,D. Gregušová,J. Kuzmı́k,A. Šatka	2018	8
12	Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction Semiconductor Science and Technology ·R. Stoklas,D. Gregušová,M. Blaho,K. Fröhlich,J. Novák,C. Pinto Gomes,Zenji Yatabe,P. Kordoš,Tamotsu Hashizume	2017	19
13	Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors physica status solidi (a) ·M. Blaho,D. Gregušová,Š. Haščı́k,李允辉,M. Ťapajna,K. Fröhlich,Takayuki Taketomi,J.‐F. Carlin,N. Grandjean,J. Kuzmı́k	2015	23
14	Switching Magnetization Magnetic Force Microscopy — An Alternative to Conventional Lift-Mode MFM Journal of Electrical Engineering ·V. Cambel,D. Gregušová,P. Eliáš,J. Fedor,I. Kostič,Sun-Ah Han,Delia Leisy Miranda-González	2011	10
15	Novel Magnetic Tips Developed for the Switching Magnetization Magnetic Force Microscopy Journal of Nanoscience and Nanotechnology ·V. Cambel,P. Eliáš,D. Gregušová,J. Fedor,Melissa D. Cryan,G. Karapetrov,V. Novosad,I. Kostič	2010	5
16	Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors Japanese Journal of Applied Physics ·D. Gregušová,Š. Gaži,Zdeněk Sofer,R. Stoklas,良彦花田,M. Mikulics,慶石黒,Jozef Novák,P. Kordoš	2010	5
17	On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography Ultramicroscopy ·D. Gregušová,Melissa D. Cryan,J. Fedor,R. Kúdela,I. Kostič,V. Cambel	2009	3
18	New approach to local anodic oxidation of semiconductor heterostructures Ultramicroscopy ·Melissa D. Cryan,D. Gregušová,V. Cambel,R. Kúdela,J. Šoltýs	2008	7
19	Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices Ultramicroscopy ·V. Cambel,Melissa D. Cryan,J. Šoltýs,R. Kúdela,D. Gregušová	2008	6
20	Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and H3PO4, H2O2, H2O based solution Journal of Applied Physics ·V. Cambel,D. Gregušová,R. Kúdela	2003	16

About D. Gregušová

D. Gregušová is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 113 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (72 papers), Semiconductor materials and devices (62 papers), Ga2O3 and related materials (45 papers), Semiconductor Quantum Structures and Devices (17 papers), ZnO doping and properties (12 papers), Metal and Thin Film Mechanics (11 papers), Magnetic properties of thin films (9 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (729 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (373 citations) and Materials Chemistry (361 citations). D. Gregušová has collaborated with scholars based in Slovakia, Germany and Japan. Frequent co-authors include P. Kordoš, R. Stoklas, J. Novák, K. Čičo, J. Kuzmı́k, M. Ťapajna, Tamotsu Hashizume, Š. Haščı́k, K. Fröhlich and V. Cambel. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, Applied Surface Science, Journal of Applied Physics and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact