Philip G. Neudeck

6.0k total citations · 1 hit paper
213 papers, 4.7k citations indexed

About

Philip G. Neudeck is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Philip G. Neudeck has authored 213 papers receiving a total of 4.7k indexed citations (citations by other indexed papers that have themselves been cited), including 194 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 21 papers in Biomedical Engineering. Recurrent topics in Philip G. Neudeck's work include Silicon Carbide Semiconductor Technologies (155 papers), Semiconductor materials and devices (62 papers) and Electromagnetic Compatibility and Noise Suppression (32 papers). Philip G. Neudeck is often cited by papers focused on Silicon Carbide Semiconductor Technologies (155 papers), Semiconductor materials and devices (62 papers) and Electromagnetic Compatibility and Noise Suppression (32 papers). Philip G. Neudeck collaborates with scholars based in United States, Japan and Germany. Philip G. Neudeck's co-authors include Liang-Yü Chen, Robert S. Okojie, J. A. Powell, David J. Spry, Michael Dudley, Glenn M. Beheim, L. G. Matus, Gary W. Hunter, C. Fazi and David Larkin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

Philip G. Neudeck

207 papers receiving 4.5k citations

Hit Papers

High-temperature electronics - a role for wide bandgap se... 2002 2026 2010 2018 2002 250 500 750

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Philip G. Neudeck United States 32 4.1k 917 766 554 528 213 4.7k
J.M. Dell Australia 27 2.1k 0.5× 1.1k 1.2× 704 0.9× 306 0.6× 390 0.7× 255 2.8k
T. Paul Chow United States 39 5.4k 1.3× 1.2k 1.3× 877 1.1× 1.1k 2.1× 1.7k 3.2× 357 6.0k
Yu.N. Makarov Russia 32 1.6k 0.4× 557 0.6× 1.3k 1.7× 805 1.5× 1.5k 2.9× 162 3.1k
Koichi Kakimoto Japan 33 2.6k 0.6× 624 0.7× 2.7k 3.5× 333 0.6× 492 0.9× 291 4.3k
Ichiro Yonenaga Japan 33 2.9k 0.7× 1.7k 1.8× 2.3k 3.0× 315 0.6× 476 0.9× 277 4.4k
Robert S. Okojie United States 21 1.9k 0.5× 409 0.4× 438 0.6× 201 0.4× 293 0.6× 81 2.3k
James A. Cooper United States 41 6.4k 1.6× 1.7k 1.8× 924 1.2× 687 1.2× 418 0.8× 189 6.8k
S. S. Lau United States 38 3.2k 0.8× 2.7k 2.9× 1.2k 1.5× 389 0.7× 660 1.3× 183 4.6k
John W. Palmour United States 51 11.0k 2.6× 2.0k 2.2× 881 1.2× 1.2k 2.1× 1.2k 2.4× 402 11.4k
J. Bude United States 33 2.9k 0.7× 669 0.7× 915 1.2× 381 0.7× 473 0.9× 123 4.0k

Countries citing papers authored by Philip G. Neudeck

Since Specialization
Citations

This map shows the geographic impact of Philip G. Neudeck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philip G. Neudeck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philip G. Neudeck more than expected).

Fields of papers citing papers by Philip G. Neudeck

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philip G. Neudeck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philip G. Neudeck. The network helps show where Philip G. Neudeck may publish in the future.

Co-authorship network of co-authors of Philip G. Neudeck

This figure shows the co-authorship network connecting the top 25 collaborators of Philip G. Neudeck. A scholar is included among the top collaborators of Philip G. Neudeck based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Philip G. Neudeck. Philip G. Neudeck is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Neudeck, Philip G., Liang-Yü Chen, David J. Spry, et al.. (2024). Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 358. 7–12.
2.
Via, Francesco La, Daniel Alquier, Filippo Giannazzo, et al.. (2023). Emerging SiC Applications beyond Power Electronic Devices. Micromachines. 14(6). 1200–1200. 51 indexed citations
3.
Spry, David J., et al.. (2023). Optimization of TaSi<sub>2</sub> Processing for 500 °C Durable SiC JFET-R Integrated Circuits. Key engineering materials. 948. 83–88. 3 indexed citations
4.
Kremic, Tibor, Gary W. Hunter, Philip G. Neudeck, et al.. (2018). Long-Life In-Situ Solar System Explorer (LLISSE) Probe Development. Lunar and Planetary Science Conference. 2796. 2 indexed citations
5.
Kremic, Tibor, Gary W. Hunter, Philip G. Neudeck, et al.. (2017). Long-Life In-Situ Solar System Explorer (LLISSE) Probe Concept and Enabling High Temperature Electronics. Lunar and Planetary Science Conference. 2986. 4 indexed citations
6.
Spry, David J., Philip G. Neudeck, Liangyu Chen, et al.. (2016). Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect. Materials science forum. 858. 908–912. 21 indexed citations
7.
Neudeck, Philip G., et al.. (2016). Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions. AIP Advances. 6(12). 55 indexed citations
8.
Devaty, Robert P., Michael Dudley, T. Paul Chow, & Philip G. Neudeck. (2012). Silicon Carbide and Related Materials 2011. Trans Tech Publications Ltd. eBooks. 8 indexed citations
9.
Devaty, Robert P., et al.. (2012). Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. 1 indexed citations
10.
Meredith, Roger D., Philip G. Neudeck, George E. Ponchak, et al.. (2012). High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator. Materials science forum. 717-720. 1215–1218. 2 indexed citations
11.
Twigg, M. E., Yoosuf N. Picard, Joshua D. Caldwell, et al.. (2010). Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging. Journal of Electronic Materials. 39(6). 743–746. 6 indexed citations
12.
Kim, Ji Hyun, Michael A. Mastro, Nabil Bassim, et al.. (2007). Evolution of strain throughout gallium nitride deposited on silicon carbide. Journal of Ceramic Processing Research. 8(5). 331–335. 1 indexed citations
13.
Trunek, Andrew J., Philip G. Neudeck, J. A. Powell, & David J. Spry. (2004). Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects. Materials science forum. 457-460. 261–264. 6 indexed citations
14.
Neudeck, Philip G.. (2003). Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces. NASA Technical Reports Server (NASA).
15.
Hunter, Gary W., Philip G. Neudeck, Gustave C. Fralick, et al.. (2002). Development of Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications. 1 indexed citations
16.
Hunter, Gary W., Philip G. Neudeck, Robert S. Okojie, et al.. (2002). Development of SiC Gas Sensor Systems. NASA STI/Recon Technical Report N. 3. 7872. 7 indexed citations
17.
Chen, Liang-Yü, Gary W. Hunter, & Philip G. Neudeck. (2000). Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation. NASA Technical Reports Server (NASA). 2 indexed citations
18.
Hunter, Gary W., Philip G. Neudeck, Qiong Wu, et al.. (1998). Chemical Gas Sensors for Aeronautics and Space Applications III. Sensors. 4 indexed citations
19.
Neudeck, Philip G. & C. Fazi. (1997). Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers. IEEE Electron Device Letters. 18(3). 96–98. 57 indexed citations
20.
Neudeck, Philip G., S.T. Sheppard, B. T. McDermott, et al.. (1991). Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy. Applied Physics Letters. 58(1). 83–85. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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