A. Osinsky

7.8k total citations
197 papers, 6.5k citations indexed

About

A. Osinsky is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, A. Osinsky has authored 197 papers receiving a total of 6.5k indexed citations (citations by other indexed papers that have themselves been cited), including 122 papers in Electronic, Optical and Magnetic Materials, 110 papers in Materials Chemistry and 103 papers in Condensed Matter Physics. Recurrent topics in A. Osinsky's work include Ga2O3 and related materials (121 papers), ZnO doping and properties (104 papers) and GaN-based semiconductor devices and materials (102 papers). A. Osinsky is often cited by papers focused on Ga2O3 and related materials (121 papers), ZnO doping and properties (104 papers) and GaN-based semiconductor devices and materials (102 papers). A. Osinsky collaborates with scholars based in United States, Russia and Sweden. A. Osinsky's co-authors include Fikadu Alema, R. Gaška, Leonid Chernyak, S. J. Pearton, B. Hertog, M. S. Shur, H. Temkin, A. M. Dabiran, M. Asif Khan and P. P. Chow and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Osinsky

193 papers receiving 6.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Osinsky United States 45 3.8k 3.8k 3.3k 2.8k 1.0k 197 6.5k
F. Ren United States 41 2.9k 0.8× 2.1k 0.6× 2.8k 0.9× 3.5k 1.2× 593 0.6× 209 5.4k
Youdou Zheng China 30 2.3k 0.6× 2.1k 0.5× 1.4k 0.4× 2.1k 0.7× 456 0.4× 249 4.1k
Masatomo Sumiya Japan 33 4.0k 1.0× 2.9k 0.8× 2.5k 0.8× 2.7k 1.0× 610 0.6× 149 5.7k
Vanya Darakchieva Sweden 34 3.2k 0.8× 1.9k 0.5× 1.6k 0.5× 1.8k 0.6× 745 0.7× 188 4.9k
Liwen Sang Japan 31 2.2k 0.6× 1.5k 0.4× 1.2k 0.4× 1.7k 0.6× 642 0.6× 135 3.5k
Debdeep Jena United States 34 6.1k 1.6× 1.9k 0.5× 1.8k 0.6× 4.5k 1.6× 1.6k 1.6× 90 8.8k
Suzanne E. Mohney United States 40 2.3k 0.6× 892 0.2× 1.6k 0.5× 3.7k 1.3× 1.7k 1.7× 216 5.3k
A. Y. Polyakov Russia 44 4.2k 1.1× 4.6k 1.2× 4.0k 1.2× 3.9k 1.4× 1.6k 1.6× 375 8.2k
A. Krost Germany 50 4.6k 1.2× 3.0k 0.8× 5.2k 1.6× 4.5k 1.6× 2.9k 2.8× 323 9.4k
Akinori Koukitu Japan 37 3.5k 0.9× 3.7k 1.0× 3.7k 1.1× 2.0k 0.7× 1.3k 1.3× 267 6.3k

Countries citing papers authored by A. Osinsky

Since Specialization
Citations

This map shows the geographic impact of A. Osinsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Osinsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Osinsky more than expected).

Fields of papers citing papers by A. Osinsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Osinsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Osinsky. The network helps show where A. Osinsky may publish in the future.

Co-authorship network of co-authors of A. Osinsky

This figure shows the co-authorship network connecting the top 25 collaborators of A. Osinsky. A scholar is included among the top collaborators of A. Osinsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Osinsky. A. Osinsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alema, Fikadu, et al.. (2025). In situ patterned damage-free etching of three-dimensional structures in β-Ga2O3 using triethylgallium. Journal of Applied Physics. 138(6). 1 indexed citations
2.
3.
Gong, Jiarui, Fikadu Alema, A. Osinsky, et al.. (2024). 0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode. IEEE Electron Device Letters. 45(3). 444–447. 15 indexed citations
4.
Peterson, Carl, Fikadu Alema, Arkka Bhattacharyya, et al.. (2024). Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates. Applied Physics Letters. 124(8). 9 indexed citations
5.
Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers at up to 225 °C. ECS Journal of Solid State Science and Technology. 12(7). 75008–75008. 4 indexed citations
6.
Snure, Michael, et al.. (2023). Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films. Journal of Applied Physics. 134(2). 5 indexed citations
7.
Li, Jian-Sian, Chao-Ching Chiang, F. Ren, et al.. (2023). Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 4 indexed citations
8.
Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(3). 8 indexed citations
9.
Alema, Fikadu, et al.. (2022). Highly conductive epitaxial β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O 3 films by MOCVD. Japanese Journal of Applied Physics. 61(10). 100903–100903. 20 indexed citations
10.
Bhattacharyya, Arkka, Praneeth Ranga, Saurav Roy, et al.. (2021). Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm². IEEE Electron Device Letters. 42(9). 1272–1275. 68 indexed citations
11.
Zhang, Yuewei, Akhil Mauze, Fikadu Alema, et al.. (2020). β -Ga 2 O 3 lateral transistors with high aspect ratio fin-shape channels. Japanese Journal of Applied Physics. 60(1). 14001–14001. 9 indexed citations
12.
Seryogin, G. A., Fikadu Alema, Houqiang Fu, et al.. (2020). MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor. Applied Physics Letters. 117(26). 116 indexed citations
13.
Tadjer, Marko J., Fikadu Alema, A. Osinsky, et al.. (2020). Characterization of β-Ga 2 O 3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. Journal of Physics D Applied Physics. 54(3). 34005–34005. 35 indexed citations
14.
Mukhopadhyay, Partha, Fikadu Alema, Tamil S. Sakthivel, et al.. (2020). Tuning the responsivity of monoclinic ( I n x G a 1 − x ) 2 O 3 solar-blind photodetectors grown by metal organic chemical vapor deposition. Journal of Physics D Applied Physics. 53(45). 454001–454001. 28 indexed citations
15.
Alema, Fikadu, Yuewei Zhang, Akhil Mauze, et al.. (2020). H2O vapor assisted growth of β-Ga2O3 by MOCVD. AIP Advances. 10(8). 34 indexed citations
16.
Alema, Fikadu, et al.. (2016). High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9749. 97490Y–97490Y. 6 indexed citations
17.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors. Applied Physics Letters. 91(23). 48 indexed citations
18.
Deng, Jie, Subrata Halder, James C. M. Hwang, et al.. (2006). Modeling and characterization of GaN p-i-n photodiodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6294. 62940N–62940N. 1 indexed citations
19.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2006). Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics. 100(9). 34 indexed citations
20.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Deep levels studies of AlGaN/GaN superlattices. Solid-State Electronics. 47(4). 671–676. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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