Uttam Singisetti

4.4k total citations
102 papers, 3.2k citations indexed

About

Uttam Singisetti is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Uttam Singisetti has authored 102 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electronic, Optical and Magnetic Materials, 62 papers in Materials Chemistry and 53 papers in Electrical and Electronic Engineering. Recurrent topics in Uttam Singisetti's work include Ga2O3 and related materials (59 papers), ZnO doping and properties (44 papers) and Semiconductor materials and devices (37 papers). Uttam Singisetti is often cited by papers focused on Ga2O3 and related materials (59 papers), ZnO doping and properties (44 papers) and Semiconductor materials and devices (37 papers). Uttam Singisetti collaborates with scholars based in United States, Italy and China. Uttam Singisetti's co-authors include Ke Zeng, Krishnendu Ghosh, Abhishek Vaidya, Shivam Sharma, Jung‐Hun Seo, Zhenqiang Ma, Munho Kim, Sudipto Saha, Jia Ye and Man Hoi Wong and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Uttam Singisetti

100 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Uttam Singisetti United States 31 2.2k 2.1k 1.3k 724 713 102 3.2k
Soohwan Jang South Korea 29 1.6k 0.7× 1.2k 0.6× 1.3k 1.0× 711 1.0× 570 0.8× 122 2.4k
Yoshihiro Kokubun Japan 24 2.1k 0.9× 1.9k 0.9× 984 0.8× 544 0.8× 984 1.4× 81 2.8k
Bo Monemar Sweden 23 1.7k 0.8× 1.5k 0.7× 767 0.6× 682 0.9× 639 0.9× 100 2.3k
Aaron R. Arehart United States 37 2.2k 1.0× 2.4k 1.1× 2.0k 1.5× 1.7k 2.4× 888 1.2× 112 3.8k
Richeng Lin China 29 2.4k 1.1× 1.6k 0.7× 1.6k 1.3× 364 0.5× 552 0.8× 52 2.9k
Leonid Chernyak United States 30 2.1k 0.9× 1.4k 0.7× 1.7k 1.3× 965 1.3× 330 0.5× 125 3.1k
Youdou Zheng China 24 1.2k 0.6× 1.1k 0.5× 925 0.7× 960 1.3× 214 0.3× 146 2.1k
Elaheh Ahmadi United States 29 2.0k 0.9× 2.2k 1.0× 1.2k 0.9× 1.6k 2.2× 907 1.3× 100 3.3k
Baikui Li China 29 1.3k 0.6× 784 0.4× 1.5k 1.2× 1.2k 1.6× 201 0.3× 127 2.5k
E. B. Yakimov Russia 28 1.7k 0.8× 1.5k 0.7× 1.5k 1.2× 906 1.3× 737 1.0× 321 3.2k

Countries citing papers authored by Uttam Singisetti

Since Specialization
Citations

This map shows the geographic impact of Uttam Singisetti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Uttam Singisetti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Uttam Singisetti more than expected).

Fields of papers citing papers by Uttam Singisetti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Uttam Singisetti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Uttam Singisetti. The network helps show where Uttam Singisetti may publish in the future.

Co-authorship network of co-authors of Uttam Singisetti

This figure shows the co-authorship network connecting the top 25 collaborators of Uttam Singisetti. A scholar is included among the top collaborators of Uttam Singisetti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Uttam Singisetti. Uttam Singisetti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saha, Sudipto, et al.. (2025). E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers. IEEE Electron Device Letters. 46(5). 725–728. 3 indexed citations
2.
Singisetti, Uttam, et al.. (2025). High performance vacuum annealed β-(AlxGa1−x)2O3/Ga2O3 HFET with fT/fMAX of 32/65 GHz. Applied Physics Express. 18(7). 71001–71001. 1 indexed citations
3.
Saha, Sudipto, et al.. (2024). High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(4). 8 indexed citations
4.
Ghadi, Hemant, Joe F. McGlone, Shivam Sharma, et al.. (2024). Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods. APL Materials. 12(9). 2 indexed citations
5.
Saha, Sudipto, et al.. (2024). Performance Analysis of a two-stage Ga2O3 Voltage Multiplier. 1–4. 1 indexed citations
6.
Sharma, Ankit, et al.. (2024). Effective phonon dispersion and low field transport in AlxGa1−xN alloys using supercells: An ab initio approach. Journal of Applied Physics. 136(19). 2 indexed citations
7.
Ghadi, Hemant, Joe F. McGlone, Shivam Sharma, et al.. (2023). Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies. APL Materials. 11(11). 13 indexed citations
8.
Huang, Hsien‐Lien, Jared M. Johnson, Shivam Sharma, et al.. (2023). Atomic-Level Insights into the Radiation Damage and Recovery of β-Ga2O3 for High-performance Semiconductors. Microscopy and Microanalysis. 29(Supplement_1). 1472–1473.
9.
Lipatov, Alexey, Avinash Kumar, Alexander Sinitskii, et al.. (2022). High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors. Applied Physics Letters. 120(7). 11 indexed citations
10.
Kumar, Avinash & Uttam Singisetti. (2022). Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures. Journal of Applied Physics. 132(20). 1 indexed citations
11.
Vaidya, Abhishek, et al.. (2021). Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency. IEEE Electron Device Letters. 42(10). 1444–1447. 58 indexed citations
12.
Kumar, Avinash, Krishnendu Ghosh, & Uttam Singisetti. (2020). Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures. Journal of Applied Physics. 128(10). 21 indexed citations
13.
Kumar, Avinash & Uttam Singisetti. (2020). First principles study of thermoelectric properties of β -gallium oxide. Applied Physics Letters. 117(26). 18 indexed citations
14.
Hasan, Md. Nazmul, et al.. (2019). Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes. Advanced Electronic Materials. 5(3). 61 indexed citations
15.
Singisetti, Uttam, Towhidur Razzak, & Yuewei Zhang. (2019). Wide Bandgap Semiconductor Electronics and Devices. 5 indexed citations
16.
Dowben, P. A., Christian Binek, Lu Wang, et al.. (2018). Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 4(1). 1–9. 37 indexed citations
17.
Ramamoorthy, Harihara, Ratchanok Somphonsane, Miao Zhao, et al.. (2017). Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs. Scientific Reports. 7(1). 11256–11256. 21 indexed citations
18.
Alivio, Theodore E. G., Luis R. De Jesús, Robert V. Dennis, et al.. (2015). Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X‐ray Absorption and Photoelectron Spectroscopies. ChemPhysChem. 16(13). 2842–2848. 7 indexed citations
19.
Wong, Man Hoi, Uttam Singisetti, Jing Lu, James S. Speck, & Umesh K. Mishra. (2012). Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 59(11). 2988–2995. 20 indexed citations
20.
Singisetti, Uttam, Mark A. Wistey, Ashish Baraskar, et al.. (2009). $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth. IEEE Electron Device Letters. 30(11). 1128–1130. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Soohwan Jang Breakdown of academic impact, for papers by Yoshihiro Kokubun Breakdown of academic impact, for papers by Bo Monemar Breakdown of academic impact, for papers by Aaron R. Arehart Breakdown of academic impact, for papers by Richeng Lin Breakdown of academic impact, for papers by Leonid Chernyak Breakdown of academic impact, for papers by Youdou Zheng Breakdown of academic impact, for papers by Elaheh Ahmadi Breakdown of academic impact, for papers by Baikui Li Breakdown of academic impact, for papers by E. B. Yakimov
Rankless by CCL
2026