A. V. Govorkov

2.9k total citations
139 papers, 2.5k citations indexed

About

A. V. Govorkov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, A. V. Govorkov has authored 139 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 116 papers in Condensed Matter Physics, 88 papers in Electronic, Optical and Magnetic Materials and 71 papers in Electrical and Electronic Engineering. Recurrent topics in A. V. Govorkov's work include GaN-based semiconductor devices and materials (116 papers), Ga2O3 and related materials (88 papers) and Semiconductor materials and devices (54 papers). A. V. Govorkov is often cited by papers focused on GaN-based semiconductor devices and materials (116 papers), Ga2O3 and related materials (88 papers) and Semiconductor materials and devices (54 papers). A. V. Govorkov collaborates with scholars based in Russia, United States and South Korea. A. V. Govorkov's co-authors include N. B. Smirnov, A. Y. Polyakov, S. J. Pearton, In‐Hwan Lee, Е. А. Кожухова, Alexander V. Markov, F. Ren, Joan M. Redwing, N. G. Kolin and J. M. Zavada and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. V. Govorkov

137 papers receiving 2.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. V. Govorkov Russia	32	2.0k	1.3k	1.3k	1.0k	553	139	2.5k
E. J. Tarsa United States	17	1.8k 0.9×	1.1k 0.8×	980 0.8×	1.2k 1.2×	582 1.1×	31	2.4k
B. Łucznik Poland	26	2.0k 1.0×	1.0k 0.8×	949 0.7×	1.0k 1.0×	539 1.0×	114	2.3k
O. Semchinova Germany	13	2.1k 1.1×	1.1k 0.9×	676 0.5×	1.2k 1.1×	711 1.3×	42	2.5k
Frank Brunner Germany	28	2.2k 1.1×	1.2k 0.9×	1.5k 1.2×	704 0.7×	444 0.8×	135	2.5k
H. Teisseyre Poland	24	2.1k 1.0×	1.1k 0.8×	851 0.7×	1.2k 1.2×	750 1.4×	103	2.5k
Andrei Vescan Germany	30	2.0k 1.0×	1.0k 0.8×	2.2k 1.7×	1.6k 1.6×	606 1.1×	211	3.4k
Tomoyoshi Mishima Japan	30	2.0k 1.0×	1.1k 0.8×	2.3k 1.7×	925 0.9×	1.1k 1.9×	182	3.2k
Shunro Fuke Japan	22	1.3k 0.6×	977 0.7×	902 0.7×	1.2k 1.2×	500 0.9×	75	2.1k
K. Doverspike United States	22	2.4k 1.2×	991 0.7×	1.4k 1.1×	927 0.9×	846 1.5×	48	2.7k
Stefan Degroote Belgium	25	1.3k 0.7×	771 0.6×	1.3k 1.0×	524 0.5×	693 1.3×	89	2.0k

Countries citing papers authored by A. V. Govorkov

Since Specialization

Citations

This map shows the geographic impact of A. V. Govorkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Govorkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Govorkov more than expected).

Fields of papers citing papers by A. V. Govorkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Govorkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Govorkov. The network helps show where A. V. Govorkov may publish in the future.

Co-authorship network of co-authors of A. V. Govorkov

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Govorkov. A scholar is included among the top collaborators of A. V. Govorkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Govorkov. A. V. Govorkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2014). DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS. American Journal of Applied Sciences. 11(9). 1714–1721. 4 indexed citations

Polyakov, A. Y., E. B. Yakimov, N. B. Smirnov, et al.. (2014). Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(5). 6 indexed citations

Liu, Lu, F. Ren, A. Y. Polyakov, et al.. (2013). Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(2). 25 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2012). Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(1). 20 indexed citations

Lee, In‐Hwan, A. Y. Polyakov, N. B. Smirnov, et al.. (2011). Deep electron and hole traps in neutron transmutation doped n-GaN. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(4). 18 indexed citations

Lo, Chien-Fong, Lu Liu, F. Ren, et al.. (2011). Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(1). 14 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2010). Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy. Journal of Applied Physics. 107(2). 4 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2009). Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth. Journal of Crystal Growth. 311(10). 2923–2925. 5 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2008). Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 990–994. 37 indexed citations

10.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Electrical Properties of ZnO(P) and ZnMgO(P) Films Grown by Pulsed Laser Deposition. Journal of The Electrochemical Society. 154(9). H825–H825. 10 indexed citations

11.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy. Journal of The Electrochemical Society. 154(9). H749–H749. 18 indexed citations

12.

Govorkov, A. V., et al.. (2006). Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 790–794. 2 indexed citations

13.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2004). Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 77–81. 4 indexed citations

14.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Deep levels studies of AlGaN/GaN superlattices. Solid-State Electronics. 47(4). 671–676. 11 indexed citations

15.

Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (2002). Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy. Journal of Applied Physics. 92(9). 4989–4993. 41 indexed citations

16.

Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (2001). Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy. Solid-State Electronics. 45(2). 249–253. 9 indexed citations

17.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2001). Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire. Solid-State Electronics. 45(2). 255–259. 12 indexed citations

18.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 929–935. 4 indexed citations

19.

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers. Applied Physics Letters. 76(13). 1767–1769. 43 indexed citations

20.

Polyakov, A. Y., M. Shin, Marek Skowroński, et al.. (1997). Growth of GaBN ternary solutions by organometallic vapor phase epitaxy. Journal of Electronic Materials. 26(3). 237–242. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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