N. B. Smirnov

5.6k citations

243 papers · 4.9k indexed · h-index 37

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 177
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials 152
Materials Chemistry top 2%
- ZnO doping and properties 100
Nuclear Energy and Engineering top 2%
Renewable Energy, Sustainability and the Environment top 2%
- Advanced Photocatalysis Techniques 17
Electrical and Electronic Engineering
- Semiconductor materials and devices 82
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 39
Biomedical Engineering
- Photocathodes and Microchannel Plates 24
Mechanics of Materials
- Metal and Thin Film Mechanics 19

Co-authors: A. Y. Polyakov S. J. Pearton A. V. Govorkov In‐Hwan Lee F. Ren Ivan Shchemerov E. B. Yakimov Е. А. Кожухова
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: SHILAP Revista de lepidopterología (1 paper)Applied Physics Letters (30 papers)Journal of Applied Physics (44 papers)
Partner nations: Russia United States South Korea

In The Last Decade

N. B. Smirnov

240 papers receiving 4.8k citations

Peers

Countries citing papers authored by N. B. Smirnov

Since Specialization

Citations

This map shows the geographic impact of N. B. Smirnov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. B. Smirnov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. B. Smirnov more than expected).

Fields of papers citing papers by N. B. Smirnov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. B. Smirnov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. B. Smirnov. The network helps show where N. B. Smirnov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside N. B. Smirnov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. B. Smirnov Line = papers co-authored together N. B. Smirnov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Experimental estimation of electron–hole pair creation energy in β -Ga2O3 Applied Physics Letters ·E. B. Yakimov,A. Y. Polyakov,Ivan Shchemerov,N. B. Smirnov,A.A. Vasil'ev,П. С. Вергелес,E. E. Yakimov,А. В. Черных,F. Ren,S. J. Pearton	2021	45
2	1 GeV proton damage in β-Ga2O3 Journal of Applied Physics ·A. Y. Polyakov,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,N. B. Smirnov,А. В. Черных,E. B. Yakimov,П. Б. Лагов,Yu. S. Pavlov,E. Ivanov,O. G. Gorbatkova,A. S. Drenin,Marta Letovaltseva,Minghan Xian,F. Ren,Jihyun Kim,S. J. Pearton	2021	12
3	Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation APL Materials ·E. B. Yakimov,A. Y. Polyakov,Ivan Shchemerov,N. B. Smirnov,A.A. Vasil'ev,П. С. Вергелес,E. E. Yakimov,А. В. Черных,Ali Sehpar Shikoh,F. Ren,S. J. Pearton	2020	45
4	Defect States Determining Dynamic Trapping-Detrapping in β-Ga₂O₃ Field-Effect Transistors ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,С. В. Черных,Sooyeoun Oh,S. J. Pearton,F. Ren,А. I. Kochkova,Jihyun Kim	2019	33
5	Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga₂O₃ (Mg) ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,S. J. Pearton,F. Ren,А. В. Черных,D. Gogova,А. I. Kochkova	2019	47
6	Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Journal of Applied Physics ·A. Y. Polyakov,Camille Haller,N. B. Smirnov,A. S. Shiko,Ivan Shchemerov,С. В. Черных,L. A. Alexanyan,П. Б. Лагов,Yu. S. Pavlov,J.‐F. Carlin,Mauro Mosca,R. Butté,N. Grandjean,S. J. Pearton	2019	21
7	Defects at the surface of β-Ga2O3 produced by Ar plasma exposure APL Materials ·A. Y. Polyakov,In‐Hwan Lee,N. B. Smirnov,E. B. Yakimov,Ivan Shchemerov,А. В. Черных,А. I. Kochkova,A.A. Vasil'ev,Patrick H. Carey,F. Ren,David J. Smith,S. J. Pearton	2019	50
8	Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra Applied Physics Letters ·A. Y. Polyakov,In‐Hwan Lee,N. B. Smirnov,E. B. Yakimov,Ivan Shchemerov,А. В. Черных,А. I. Kochkova,A.A. Vasil'ev,F. Ren,Patrick H. Carey,S. J. Pearton	2019	49
9	Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire APL Materials ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,В. И. Николаев,С. И. Степанов,А. И. Печников,А. В. Черных,К. Д. Щербачев,Ali Sehpar Shikoh,А. I. Kochkova,A.A. Vasil'ev,S. J. Pearton	2019	45
10	Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si APL Materials ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,S. J. Pearton,F. Ren,А. В. Черных,П. Б. Лагов,T. V. Kulevoy	2018	101
11	Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage Applied Physics Letters ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,Jiancheng Yang,F. Ren,Gwangseok Yang,Jihyun Kim,Akito Kuramata,S. J. Pearton	2018	125
12	Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,Jiancheng Yang,F. Ren,Chien-Fong Lo,Oleg Laboutin,J. W. Johnson,S. J. Pearton	2018	9
13	Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current Journal of Applied Physics ·E. B. Yakimov,A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,Jiancheng Yang,F. Ren,Gwangseok Yang,Jihyun Kim,S. J. Pearton	2018	62
14	Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy Applied Physics Letters ·In‐Hwan Lee,A. Y. Polyakov,E. B. Yakimov,N. B. Smirnov,Ivan Shchemerov,С. А. Тарелкин,S. Didenko,K. I. Tapero,R. A. Zinovyev,S. J. Pearton	2017	28
15	Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs Applied Physics Letters ·In‐Hwan Lee,A. Y. Polyakov,Sung-Min Hwang,N. M. Shmidt,E. I. Shabunina,N. A. Tal’nishnih,N. B. Smirnov,Ivan Shchemerov,R. A. Zinovyev,С. А. Тарелкин,S. J. Pearton	2017	20
16	Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges Applied Physics Letters ·In‐Hwan Lee,A. Y. Polyakov,N. B. Smirnov,R. A. Zinovyev,Kang-Bin Bae,Tae-Hoon Chung,Sung-Min Hwang,J. H. Baek,S. J. Pearton	2017	25
17	Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments Journal of Applied Physics ·In‐Hwan Lee,A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,П. Б. Лагов,R. A. Zinov'ev,E. B. Yakimov,К. Д. Щербачев,S. J. Pearton	2017	32
18	Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy Journal of Applied Physics ·A. Y. Polyakov,N. B. Smirnov,E. B. Yakimov,In‐Hwan Lee,S. J. Pearton	2016	26
19	Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN Journal of Applied Physics ·In‐Hwan Lee,A. Y. Polyakov,N. B. Smirnov,E. B. Yakimov,С. А. Тарелкин,Andrei V. Turutin,I. V. Shemerov,S. J. Pearton	2016	25
20	DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS American Journal of Applied Sciences ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,H. M. Cox,A. Usikov,H. Helava,Yu.N. Makarov,E. B. Yakimov,I. -H. Lee	2014	4

About N. B. Smirnov

N. B. Smirnov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 243 papers that have together received 4.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (177 papers), Ga2O3 and related materials (152 papers), ZnO doping and properties (100 papers), Semiconductor materials and devices (82 papers), Semiconductor Quantum Structures and Devices (39 papers), Photocathodes and Microchannel Plates (24 papers), Metal and Thin Film Mechanics (19 papers) and Advanced Photocatalysis Techniques (17 papers). The work is most often cited by research in Condensed Matter Physics (2.9k citations), Electronic, Optical and Magnetic Materials (2.9k citations) and Materials Chemistry (2.6k citations). N. B. Smirnov has collaborated with scholars based in Russia, United States and South Korea. Frequent co-authors include A. Y. Polyakov, S. J. Pearton, A. V. Govorkov, In‐Hwan Lee, F. Ren, Ivan Shchemerov, E. B. Yakimov, Е. А. Кожухова, А. В. Черных and A. V. Govorkov. Their work appears in journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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