N. B. Smirnov

5.6k total citations
243 papers, 4.9k citations indexed

About

N. B. Smirnov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, N. B. Smirnov has authored 243 papers receiving a total of 4.9k indexed citations (citations by other indexed papers that have themselves been cited), including 178 papers in Condensed Matter Physics, 153 papers in Electronic, Optical and Magnetic Materials and 111 papers in Electrical and Electronic Engineering. Recurrent topics in N. B. Smirnov's work include GaN-based semiconductor devices and materials (177 papers), Ga2O3 and related materials (152 papers) and ZnO doping and properties (100 papers). N. B. Smirnov is often cited by papers focused on GaN-based semiconductor devices and materials (177 papers), Ga2O3 and related materials (152 papers) and ZnO doping and properties (100 papers). N. B. Smirnov collaborates with scholars based in Russia, United States and South Korea. N. B. Smirnov's co-authors include A. Y. Polyakov, S. J. Pearton, A. V. Govorkov, In‐Hwan Lee, F. Ren, E. B. Yakimov, Ivan Shchemerov, Е. А. Кожухова, А. В. Черных and A. V. Govorkov and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. B. Smirnov

240 papers receiving 4.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. B. Smirnov Russia 37 2.9k 2.9k 2.6k 2.2k 940 243 4.9k
Jaime A. Freitas United States 36 2.2k 0.8× 2.7k 0.9× 2.6k 1.0× 2.2k 1.0× 826 0.9× 220 4.9k
A. Y. Polyakov Russia 44 4.6k 1.6× 4.0k 1.4× 4.2k 1.6× 3.9k 1.7× 1.6k 1.7× 375 8.2k
Steven A. Ringel United States 48 2.6k 0.9× 2.3k 0.8× 2.5k 1.0× 4.1k 1.8× 2.2k 2.3× 223 6.3k
Martin Straßburg Germany 33 2.3k 0.8× 2.3k 0.8× 3.6k 1.4× 2.1k 0.9× 982 1.0× 148 5.0k
Leonid Chernyak United States 30 1.4k 0.5× 965 0.3× 2.1k 0.8× 1.7k 0.8× 625 0.7× 125 3.1k
Ü. Özgür United States 30 1.8k 0.6× 2.0k 0.7× 2.4k 0.9× 1.9k 0.8× 1.2k 1.2× 143 4.1k
J. Bläsing Germany 39 2.2k 0.7× 3.5k 1.2× 3.5k 1.3× 2.8k 1.2× 1.2k 1.3× 190 6.2k
S. J. Chua Singapore 33 1.3k 0.5× 1.8k 0.6× 2.1k 0.8× 2.0k 0.9× 1.1k 1.2× 197 3.8k
Neeraj Nepal United States 35 1.5k 0.5× 2.2k 0.8× 1.7k 0.6× 1.3k 0.6× 481 0.5× 128 3.2k
R. Fornari Germany 37 4.3k 1.5× 727 0.3× 4.9k 1.9× 1.8k 0.8× 509 0.5× 210 5.9k

Countries citing papers authored by N. B. Smirnov

Since Specialization
Citations

This map shows the geographic impact of N. B. Smirnov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. B. Smirnov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. B. Smirnov more than expected).

Fields of papers citing papers by N. B. Smirnov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. B. Smirnov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. B. Smirnov. The network helps show where N. B. Smirnov may publish in the future.

Co-authorship network of co-authors of N. B. Smirnov

This figure shows the co-authorship network connecting the top 25 collaborators of N. B. Smirnov. A scholar is included among the top collaborators of N. B. Smirnov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. B. Smirnov. N. B. Smirnov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yakimov, E. B., A. Y. Polyakov, Ivan Shchemerov, et al.. (2021). Experimental estimation of electron–hole pair creation energy in β -Ga2O3. Applied Physics Letters. 118(20). 45 indexed citations
2.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2021). Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3. Journal of Applied Physics. 130(3). 14 indexed citations
3.
Yakimov, E. B., A. Y. Polyakov, Ivan Shchemerov, et al.. (2020). Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation. APL Materials. 8(11). 45 indexed citations
4.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2020). Ion Dynamics in Single and Multi-Cation Perovskite. ECS Journal of Solid State Science and Technology. 9(6). 65015–65015. 9 indexed citations
5.
Polyakov, A. Y., In‐Hwan Lee, N. B. Smirnov, et al.. (2019). Defects at the surface of β-Ga2O3 produced by Ar plasma exposure. APL Materials. 7(6). 50 indexed citations
6.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2019). Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg). ECS Journal of Solid State Science and Technology. 8(7). Q3019–Q3023. 47 indexed citations
7.
Polyakov, A. Y., In‐Hwan Lee, N. B. Smirnov, et al.. (2019). Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra. Applied Physics Letters. 115(3). 49 indexed citations
8.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2019). Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire. APL Materials. 7(5). 45 indexed citations
9.
Polyakov, A. Y., Camille Haller, N. B. Smirnov, et al.. (2019). Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes. Journal of Applied Physics. 126(12). 21 indexed citations
10.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3. Applied Physics Letters. 113(9). 91 indexed citations
11.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors. ECS Journal of Solid State Science and Technology. 7(2). Q1–Q7. 9 indexed citations
12.
Yakimov, E. B., A. Y. Polyakov, N. B. Smirnov, et al.. (2018). Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current. Journal of Applied Physics. 123(18). 62 indexed citations
13.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage. Applied Physics Letters. 112(3). 125 indexed citations
14.
Lee, In‐Hwan, A. Y. Polyakov, N. B. Smirnov, et al.. (2017). Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments. Journal of Applied Physics. 122(11). 32 indexed citations
15.
Lee, In‐Hwan, A. Y. Polyakov, N. M. Shmidt, et al.. (2017). Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs. Applied Physics Letters. 111(6). 20 indexed citations
16.
Lee, In‐Hwan, et al.. (2017). Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges. Applied Physics Letters. 110(19). 25 indexed citations
17.
Lee, In‐Hwan, A. Y. Polyakov, N. B. Smirnov, et al.. (2016). Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN. Journal of Applied Physics. 119(20). 25 indexed citations
18.
Polyakov, A. Y., N. B. Smirnov, E. B. Yakimov, In‐Hwan Lee, & S. J. Pearton. (2016). Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy. Journal of Applied Physics. 119(1). 26 indexed citations
19.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2014). DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS. American Journal of Applied Sciences. 11(9). 1714–1721. 4 indexed citations
20.
Markov, Alexander V., A. Y. Polyakov, N. B. Smirnov, et al.. (2000). Study of GaAs as a material for solar neutrino detectors. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 439(2-3). 651–661. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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