Wayne Johnson

1.3k citations

59 papers · 1.1k indexed · h-index 19

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
- Physics of Superconductivity and Magnetism
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 33
Electronic, Optical and Magnetic Materials 23
- Ga2O3 and related materials 20

Co-authors: Yu Cao (18 shared papers)Huili Grace Xing (11 shared papers)Oleg Laboutin (24 shared papers)Alwyn Scott (1 shared paper)Zongyang Hu (7 shared papers)Debdeep Jena (8 shared papers)A. Barone (2 shared papers)Patrick Fay (10 shared papers)
Journals: Applied Physics Letters (7 papers)IEEE Electron Device Letters (5 papers)Journal of Applied Physics (4 papers)IEEE Transactions on Vehicular Technology (4 papers)Applied Physics Express (3 papers)
Partner nations: United States South Korea United Kingdom

In The Last Decade

Wayne Johnson

58 papers receiving 1.0k citations

Peers

Countries citing papers authored by Wayne Johnson

Since Specialization

Citations

This map shows the geographic impact of Wayne Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wayne Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wayne Johnson more than expected).

Fields of papers citing papers by Wayne Johnson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wayne Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wayne Johnson. The network helps show where Wayne Johnson may publish in the future.

Co-authors

The 25 scholars most cited alongside Wayne Johnson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Wayne Johnson Line = papers co-authored together Wayne Johnson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 59 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon IEEE Electron Device Letters ·Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Wayne Johnson, E. Kohn, Debdeep Jena, Huili Grace Xing	2015	161
2	210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2011	87
3	Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Hung-Ta Wang, B. S. Kang, TJ Chancellor, Tanmay P. Lele, Yu‐Chih Tseng, F. Ren, S. J. Pearton, Wayne Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum	2007	78
4	Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation Nanoscale and Microscale Thermophysical Engineering ·Thomas L. Bougher, Luke Yates, Chien-Fong Lo, Wayne Johnson, Samuel Graham, Baratunde A. Cola	2016	73
5	220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Jai Verma, Berardi Sensale‐Rodriguez, Fang Tian, Jia Guo, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2011	70
6	INTERNAL FLUX MOTION IN LARGE JOSEPHSON JUNCTIONS Applied Physics Letters ·Alwyn Scott, Wayne Johnson	1969	61
7	Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2013	61
8	Current flow in large Josephson junctions Journal of Applied Physics ·A. Barone, Wayne Johnson, R. Vaglio	1975	43
9	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	2012	38
10	InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Applied Physics Letters ·Oleg Laboutin, Yu Cao, Wayne Johnson, R. Wang, G. Li, D. Jena, Huili Grace Xing	2012	38
11	InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andf_T/f_maxof 260/220 GHz Applied Physics Express ·Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Faiza Faria, Zongyang Hu, Yuanzheng Yue, Jai Verma, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2013	37
12	Advantages and limitations of MgO as a dielectric for GaN Solid-State Electronics ·F. Ren, J. Kim, B. Luo, A. Onstine, Wayne Johnson, F. Ren, C. R. Abernathy, S. J. Pearton	2003	31
13	Silicon carbide integrated circuits for extreme environments Avinash S. Kashyap, Cheng-Po Chen, Reza Ghandi, Amita Patil, Emad Andarawis, Liang Yin, Dave Shaddock, Peter Sandvik, Kun Fang, Zhenzhen Shen, Wayne Johnson	2013	30
14	Effect of Junction Geometry on Maximum Zero-Voltage Josephson Current Journal of Applied Physics ·Wayne Johnson, A. Barone	1970	26
15	Active flywheel control based on the method of moment restrictions Sergei V. Gusev, Wayne Johnson, John M. Miller	1997	25
16	Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jin-Hyung Kim, Chih-Yang Chang, E Douglas, Soohwan Jang, David J. Smith, S. J. Pearton, Wayne Johnson, F. Ren	2011	25
17	317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, David Kopp, Patrick Fay, Tomás Palacios	2013	19
18	Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam Applied Physics Letters ·Akira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios	2014	18
19	Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Materials Science and Engineering A ·S. N. G. Chu, F. Ren, S. J. Pearton, B. S. Kang, S. Kim, F. Ren, C. R. Abernathy, J.‐I. Chyi, Wayne Johnson, Jenshan Lin	2005	18
20	Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters ·Chien-Fong Lo, Lu Liu, Tsung-Sheng Kang, Ryan Davies, F. Ren, S. J. Pearton, Ivan I. Kravchenko, Oleg Laboutin, Yu Cao, Wayne Johnson, F. Ren	2011	18

About Wayne Johnson

Wayne Johnson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Fluid Flow and Transfer Processes and Bioengineering, having authored 59 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (20 papers), Semiconductor materials and devices (20 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor Quantum Structures and Devices (7 papers), Radio Frequency Integrated Circuit Design (6 papers), Combustion and Detonation Processes (4 papers) and ZnO doping and properties (4 papers). The work is most often cited by research in Condensed Matter Physics (802 citations), Electronic, Optical and Magnetic Materials (398 citations), Electrical and Electronic Engineering (659 citations), Atomic and Molecular Physics, and Optics (276 citations) and Materials Chemistry (259 citations). Wayne Johnson has collaborated with scholars based in United States, South Korea and United Kingdom. Frequent co-authors include Yu Cao, Huili Grace Xing, Oleg Laboutin, Alwyn Scott, Zongyang Hu, Debdeep Jena, A. Barone, Patrick Fay, Guowang Li and Ronghua Wang. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, IEEE Transactions on Vehicular Technology and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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