Wayne Johnson

1.3k total citations
59 papers, 1.1k citations indexed

About

Wayne Johnson is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Wayne Johnson has authored 59 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 37 papers in Condensed Matter Physics and 23 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Wayne Johnson's work include GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (20 papers). Wayne Johnson is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (20 papers). Wayne Johnson collaborates with scholars based in United States, United Kingdom and Japan. Wayne Johnson's co-authors include Yu Cao, Huili Grace Xing, Oleg Laboutin, Alwyn Scott, Debdeep Jena, Zongyang Hu, A. Barone, Patrick Fay, Guowang Li and Ronghua Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Wayne Johnson

58 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wayne Johnson United States 19 802 659 398 276 259 59 1.1k
Hiroyuki Awano Japan 18 353 0.4× 659 1.0× 634 1.6× 1.2k 4.5× 404 1.6× 142 1.5k
Masamichi Akazawa Japan 20 452 0.6× 1.1k 1.7× 257 0.6× 622 2.3× 303 1.2× 97 1.4k
Tetsuya Suemitsu Japan 20 477 0.6× 1.3k 2.0× 183 0.5× 718 2.6× 386 1.5× 154 1.6k
Fujitoshi Shinoki Japan 16 445 0.6× 628 1.0× 124 0.3× 298 1.1× 316 1.2× 32 1.0k
J. Jorzick Germany 13 362 0.5× 378 0.6× 392 1.0× 947 3.4× 148 0.6× 19 1.1k
M. Muñoz Spain 21 365 0.5× 809 1.2× 471 1.2× 1.4k 5.3× 523 2.0× 56 1.8k
Pavol Krivošı́k United States 20 309 0.4× 601 0.9× 854 2.1× 1.2k 4.3× 350 1.4× 46 1.6k
J.-G. Zhu United States 17 289 0.4× 224 0.3× 440 1.1× 784 2.8× 205 0.8× 41 965
Ming Yan China 16 422 0.5× 357 0.5× 407 1.0× 1.0k 3.6× 241 0.9× 48 1.2k
C. Nordman United States 16 437 0.5× 420 0.6× 500 1.3× 621 2.3× 231 0.9× 28 1.1k

Countries citing papers authored by Wayne Johnson

Since Specialization
Citations

This map shows the geographic impact of Wayne Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wayne Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wayne Johnson more than expected).

Fields of papers citing papers by Wayne Johnson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wayne Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wayne Johnson. The network helps show where Wayne Johnson may publish in the future.

Co-authorship network of co-authors of Wayne Johnson

This figure shows the co-authorship network connecting the top 25 collaborators of Wayne Johnson. A scholar is included among the top collaborators of Wayne Johnson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wayne Johnson. Wayne Johnson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nomoto, Kazuki, Wenshen Li, Bo Song, et al.. (2022). Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV. Applied Physics Letters. 120(12). 4 indexed citations
2.
Lo, Chien-Fong, et al.. (2017). Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates. ECS Journal of Solid State Science and Technology. 6(11). S3048–S3051. 2 indexed citations
3.
Cao, Lina, Chien-Fong Lo, H. Marchand, Wayne Johnson, & Patrick Fay. (2017). Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates. 1–4. 8 indexed citations
4.
Bougher, Thomas L., Luke Yates, Chien-Fong Lo, et al.. (2016). Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation. Nanoscale and Microscale Thermophysical Engineering. 20(1). 22–32. 73 indexed citations
5.
LaRoche, J. R., W. E. Hoke, Yu Cao, et al.. (2014). (Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come. ECS Transactions. 61(4). 29–32. 1 indexed citations
6.
Uedono, Akira, Tatsuya Fujishima, Yu Cao, et al.. (2014). Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam. Applied Physics Letters. 104(8). 82110–82110. 18 indexed citations
7.
Lee, Dong Seup, Han Wang, Allen Hsu, et al.. (2013). High linearity nanowire channel GaN HEMTs. 48. 195–196. 1 indexed citations
8.
Wang, Ronghua, Jia Guo, Bo Song, et al.. (2013). Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation. 24. 28.6.1–28.6.4. 9 indexed citations
9.
Johnson, Wayne & Ender Savrun. (2012). Silicon nitride substrate technology for extreme environment electronics packaging. 1–10. 2 indexed citations
10.
Lo, Chien-Fong, Lu Liu, Ryan Davies, et al.. (2011). Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization. ECS Transactions. 41(6). 63–70. 2 indexed citations
11.
Wang, Ronghua, Guowang Li, Oleg Laboutin, et al.. (2011). 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation. IEEE Electron Device Letters. 32(7). 892–894. 87 indexed citations
12.
Johnson, Wayne, Sameer Singhal, A.W. Hanson, et al.. (2008). GaN-on-Si HEMTs: From Device Technology to Product Insertion. MRS Proceedings. 1068. 6 indexed citations
13.
Cook, J.A. & Wayne Johnson. (2005). Automotive powertrain control: emission regulation to advanced onboard control systems. 4. 2571–2575. 1 indexed citations
14.
Ren, F., J. Kim, B. Luo, et al.. (2003). Advantages and limitations of MgO as a dielectric for GaN. Solid-State Electronics. 47(12). 2139–2142. 31 indexed citations
15.
Hrovat, Davor & Wayne Johnson. (2002). Automotive control systems: past, present, future. 37. 101–106. 3 indexed citations
16.
Johnson, Wayne, et al.. (1986). A Proposal for a Vehicle Network Protocol Standard. SAE technical papers on CD-ROM/SAE technical paper series. 5 indexed citations
17.
Johnson, Wayne, et al.. (1977). Radiated noise due to individual spark events in an internal combustion engine. 77–82. 1 indexed citations
18.
Rado, W. G. & Wayne Johnson. (1975). Monitoring the combustion quality in internal combustion engines using the spark plug as a plasma probe. IEEE Transactions on Vehicular Technology. 24(2). 17–21. 2 indexed citations
19.
Johnson, Wayne. (1974). Nonlinear wave propagation on superconducting tunneling junctions. University Microfilms eBooks. 8 indexed citations
20.
Logothetis, E. M., H. Holloway, Attila Varga, & Wayne Johnson. (1972). n-p junction ir detectors made by proton bombardment of epitaxial PbTe. Applied Physics Letters. 21(9). 411–413. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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