V. Dmitriev

2.4k citations

147 papers · 2.0k indexed · h-index 23

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 101
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 47
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 59
- Semiconductor materials and devices 52
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 13
Materials Chemistry top 10%
- ZnO doping and properties 19
Mechanics of Materials
- Metal and Thin Film Mechanics 27
Biomedical Engineering
- Photocathodes and Microchannel Plates 11

Co-authors: N.I. Kuznetsov K. G. Irvine Yu. Melnik A. Usikov V. Soukhoveev D. Tsvetkov И.П. Никитина C. H. Carter
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: MRS Internet Journal of Nitride Semiconductor Research (11 papers)Applied Physics Letters (10 papers)Journal of Applied Physics (9 papers)
Partner nations: United States Russia Sweden

In The Last Decade

V. Dmitriev

138 papers receiving 1.9k citations

Peers

Countries citing papers authored by V. Dmitriev

Since Specialization

Citations

This map shows the geographic impact of V. Dmitriev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Dmitriev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Dmitriev more than expected).

Fields of papers citing papers by V. Dmitriev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Dmitriev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Dmitriev. The network helps show where V. Dmitriev may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Dmitriev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Dmitriev Line = papers co-authored together V. Dmitriev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Рога барана и крылья сокола: к вопросу о религиозной символике в оформлении царских корон Сасанидов (Ram's Horns and Falcon's Wings: Religious Symbolism In Sasanian Kings’ Crowns) SSRN Electronic Journal ·V. Dmitriev	2012	1
2	The Influence of Phonons and Phonon Decay on the Optical Properties of GaN Bulletin of the American Physical Society ·D. Y. Song,Madivala G. Basavaraj,S. A. Nikishin,M. Holtz,V. Soukhoveev,A. S. Usikov,V. Dmitriev	2006	0
3	AlGaN epitaxial layers grown by HVPE on sapphire substrates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Soukhoveev,O. V. Kovalenkov,Wei Gang-cai,V. Ivantsov,A. Usikov,V. Dmitriev,V. Yu. Davydov,A. N. Smirnov	2006	9
4	Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Soukhoveev,O. V. Kovalenkov,V. Ivantsov,A. L. Syrkin,A. Usikov,Sisi Chen,V. Dmitriev	2006	17
5	The influence of phonons on the optical properties of GaN Journal of Applied Physics ·D. Y. Song,Madivala G. Basavaraj,S. A. Nikishin,M. Holtz,V. Soukhoveev,A. S. Usikov,V. Dmitriev	2006	48
6	P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE MRS Proceedings ·A. Usikov,O. V. Kovalenkov,V. Ivantsov,H Wauer,V. Dmitriev,N. M. Shmidt,D. S. Poloskin,V. N. Petrov,В. В. Ратников	2004	3
7	Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy Solid-State Electronics ·A. Y. Polyakov,A. V. Govorkov,N. B. Smirnov,A. E. Nikolaev,И.П. Никитина,V. Dmitriev	2001	9
8	Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy physica status solidi (a) ·Yu. Melnik,D. Tsvetkov,А. И. Печников,И.П. Никитина,N.I. Kuznetsov,V. Dmitriev	2001	21
9	Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes Materials science forum ·M. Shamsuzzoha,Stephen E. Saddow,正一仁昌寺,Li Jin,Michael Dudley,Suryadi Umbu Ewang,V. Dmitriev	2000	2
10	Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films MRS Internet Journal of Nitride Semiconductor Research ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. Usikov,N. M. Shmidt,石凤,D. Tsvetkov,Kerstin Christina Weißmann,V. Dmitriev,M. G. Mil’vidskiĭ,Camilla Israelsson	2000	4
11	The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates Journal of Crystal Growth ·T.S. Cheng,С. В. Новиков,Jhenifer Da Silva Amaral,R. P. Campion,Proust A,Yu. Melnik,D. Tsvetkov,С. И. Степанов,A. E. Cherenkov,V. Dmitriev,D. Korakakis,O. H. Hughes,C. T. Foxon	1999	8
12	GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates MRS Proceedings ·M. G. Mynbaeva,A. N. Titkov,W. Wang,A. S. Zubrilov,В. В. Ратников,V. Yu. Davydov,N.I. Kuznetsov,K. D. Mynbaev,С. И. Степанов,A. E. Cherenkov,LUANA AMBONI CANELA,D. Tsvetkov,V. Dmitriev	1999	1
13	Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN physica status solidi (a) ·G. Salviati,M. Albrecht,Saeed Bayati,N. Armani,Markus Mayer,Yu. G. Shreter,M. Guzzi,Yu. Melnik,Konstantin Vassilevski,V. Dmitriev,H. P. Strunk	1999	75
14	Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density Materials Science and Engineering B ·Stephen E. Saddow,Michael S. Mazzola,Suryadi Umbu Ewang,V. Dmitriev	1999	10
15	Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates Applied Physics Letters ·N.I. Kuznetsov,A. E. Nikolaev,A. S. Zubrilov,Yu. Melnik,V. Dmitriev	1999	53
16	Overview of SiC power electronics Diamond and Related Materials ·V. E. Chelnokov,A. L. Syrkin,V. Dmitriev	1997	41
17	Ti/Ni ohmic contacts to n-type gallium nitride Materials Science and Engineering B ·Konstantin Vassilevski,M. G. Rastegaeva,ZHU Jun(祝钧),И.П. Никитина,V. Dmitriev	1997	6
18	Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy Physica B Condensed Matter ·V. Dmitriev	1993	11
19	Growth of SiC and SiC-AlN solid solution by container-free liquid phase epitaxy Journal of Crystal Growth ·V. Dmitriev,A. E. Cherenkov	1993	22
20	A silicon carbide dynistor Sergey N. Vainshtein,V. Dmitriev,A. L. Syrkin,V. E. Chelnokov	1987	2

About V. Dmitriev

V. Dmitriev is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Mechanics of Materials and Classics, having authored 147 papers that have together received 2.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (101 papers), Silicon Carbide Semiconductor Technologies (59 papers), Semiconductor materials and devices (52 papers), Ga2O3 and related materials (47 papers), Metal and Thin Film Mechanics (27 papers), ZnO doping and properties (19 papers), Semiconductor Quantum Structures and Devices (13 papers) and Photocathodes and Microchannel Plates (11 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (729 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (500 citations) and Materials Chemistry (658 citations). V. Dmitriev has collaborated with scholars based in United States, Russia and Sweden. Frequent co-authors include N.I. Kuznetsov, K. G. Irvine, Yu. Melnik, A. Usikov, V. Soukhoveev, D. Tsvetkov, И.П. Никитина, C. H. Carter, A. E. Nikolaev and V. Ivantsov. Their work appears in journals such as MRS Internet Journal of Nitride Semiconductor Research, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics and Journal of Crystal Growth.

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