J. M. Zavada

7.4k total citations
269 papers, 6.2k citations indexed

About

J. M. Zavada is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, J. M. Zavada has authored 269 papers receiving a total of 6.2k indexed citations (citations by other indexed papers that have themselves been cited), including 185 papers in Condensed Matter Physics, 147 papers in Materials Chemistry and 145 papers in Electrical and Electronic Engineering. Recurrent topics in J. M. Zavada's work include GaN-based semiconductor devices and materials (183 papers), ZnO doping and properties (104 papers) and Ga2O3 and related materials (100 papers). J. M. Zavada is often cited by papers focused on GaN-based semiconductor devices and materials (183 papers), ZnO doping and properties (104 papers) and Ga2O3 and related materials (100 papers). J. M. Zavada collaborates with scholars based in United States, Russia and United Kingdom. J. M. Zavada's co-authors include S. J. Pearton, A. J. Steckl, R. G. Wilson, U. Hömmerich, K. W. Kim, D. P. Norton, C. R. Abernathy, H. X. Jiang, J. Y. Lin and Yu. G. Semenov and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. M. Zavada

263 papers receiving 6.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. M. Zavada United States	44	4.3k	3.1k	3.0k	2.2k	1.5k	269	6.2k
A. Y. Polyakov Russia	44	4.2k 1.0×	4.0k 1.3×	3.9k 1.3×	4.6k 2.1×	1.6k 1.1×	375	8.2k
T. Yao Japan	32	5.9k 1.4×	1.5k 0.5×	3.8k 1.3×	3.1k 1.4×	1.3k 0.9×	286	7.1k
K. Lischka Germany	39	3.2k 0.7×	2.5k 0.8×	3.0k 1.0×	1.5k 0.7×	2.5k 1.6×	250	5.8k
Takafumi Yao Japan	48	6.7k 1.6×	1.7k 0.5×	4.7k 1.6×	3.3k 1.5×	2.5k 1.7×	324	8.8k
Akinori Koukitu Japan	37	3.5k 0.8×	3.7k 1.2×	2.0k 0.7×	3.7k 1.7×	1.3k 0.9×	267	6.3k
Jaime A. Freitas United States	36	2.6k 0.6×	2.7k 0.9×	2.2k 0.7×	2.2k 1.0×	826 0.6×	220	4.9k
C. R. Abernathy United States	52	4.9k 1.2×	6.0k 1.9×	7.3k 2.4×	3.5k 1.6×	2.8k 1.9×	466	11.1k
Manfred Reiche Germany	28	2.1k 0.5×	1.5k 0.5×	2.1k 0.7×	852 0.4×	1.1k 0.7×	179	4.3k
S. Strite United States	23	2.5k 0.6×	4.6k 1.5×	3.4k 1.1×	2.1k 0.9×	2.5k 1.7×	48	6.9k
B. Daudin France	46	3.4k 0.8×	5.7k 1.8×	2.1k 0.7×	2.7k 1.2×	2.8k 1.9×	321	7.4k

Countries citing papers authored by J. M. Zavada

Since Specialization

Citations

This map shows the geographic impact of J. M. Zavada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Zavada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Zavada more than expected).

Fields of papers citing papers by J. M. Zavada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Zavada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Zavada. The network helps show where J. M. Zavada may publish in the future.

Co-authorship network of co-authors of J. M. Zavada

This figure shows the co-authorship network connecting the top 25 collaborators of J. M. Zavada. A scholar is included among the top collaborators of J. M. Zavada based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. M. Zavada. J. M. Zavada is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zavada, J. M.. (2016). Wide Bandgap Nitride Devices.

Ugolini, C., et al.. (2012). Formation energy of optically active Er³⁺ centers in Er doped GaN. Applied Physics Letters. 101(5). 51114–51114. 15 indexed citations

Li, J., et al.. (2010). Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers. Applied Physics Letters. 96(3). 22 indexed citations

Dierolf, Volkmar, et al.. (2009). Rare-earth doping of advanced materials for photonic applications : symposium held December 1-4, 2008, Boston, Massachusetts, U.S.A.. 1 indexed citations

Steckl, A. J., et al.. (2009). Effect of Si codoping on Eu3+ luminescence in GaN. Journal of Applied Physics. 105(4). 30 indexed citations

Semenov, Yu. G., J. M. Zavada, & K. W. Kim. (2008). Electrical Control of Exchange Bias Mediated by Graphene. Physical Review Letters. 101(14). 147206–147206. 15 indexed citations

Hömmerich, U., et al.. (2008). Infrared Emission Properties of Ho Doped KPb₂Cl₅. MRS Proceedings. 1111.

Pearton, S. J., D. P. Norton, M. Ivill, et al.. (2007). Transition Metal Doped ZnO for Spintronics. MRS Proceedings. 999. 8 indexed citations

Semenov, Yu. G., K. W. Kim, & J. M. Zavada. (2007). Spin field effect transistor with a graphene channel. Applied Physics Letters. 91(15). 156 indexed citations

10.

Seo, Jaetae, et al.. (2006). Green luminescence and excited state thermalization in Er-doped gallium nitride. Journal of the Korean Physical Society. 49(3). 943–946. 2 indexed citations

11.

Han, Sang Youn, Jennifer K. Hite, G. T. Thaler, et al.. (2006). Effect of Gd implantation on the structural and magnetic properties of GaN and AlN. Applied Physics Letters. 88(4). 53 indexed citations

12.

Hite, Jennifer K., G. T. Thaler, Raghav Khanna, et al.. (2006). Optical and magnetic properties of Eu-doped GaN. Applied Physics Letters. 89(13). 64 indexed citations

13.

Lee, Chang‐Won, Henry O. Everitt, Dong‐Seon Lee, A. J. Steckl, & J. M. Zavada. (2004). Temperature dependence of energy transfer mechanisms in Eu-doped GaN. Journal of Applied Physics. 95(12). 7717–7724. 52 indexed citations

14.

Bathe, Ravi, R. D. Vispute, J. M. Zavada, et al.. (2004). Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 624–629. 6 indexed citations

15.

Thaler, G. T., R. M. Frazier, John Stapleton, et al.. (2004). Properties of (Ga, Mn)N With and Without Detectable Second Phases. Electrochemical and Solid-State Letters. 7(2). G34–G34. 9 indexed citations

16.

Nyein, Ei Ei, U. Hömmerich, Jason Heikenfeld, et al.. (2003). Characterization of the red light emission from Eu doped GaN. Conference on Lasers and Electro-Optics. 1002–1003. 1 indexed citations

17.

Pearton, S. J., C. R. Abernathy, G. T. Thaler, et al.. (2003). Effects of defects and doping on wide band gap ferromagnetic semiconductors. Physica B Condensed Matter. 340-342. 39–47. 42 indexed citations

18.

Theodoropoulou, Nikoleta, A. F. Hebard, S. N. G. Chu, et al.. (2001). Magnetic Properties of Fe- and Mn-Implanted SiC. Electrochemical and Solid-State Letters. 4(12). G119–G119. 43 indexed citations

19.

Brandle, C.D., et al.. (1997). Stability of hydrogen in ScAlMgO4. Solid-State Electronics. 41(12). 1943–1945. 3 indexed citations

20.

Pearton, S. J., et al.. (1996). Patterning of LiGaO₂ and LiAlO₂ by Wet and Dry Etching. MRS Proceedings. 449. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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