J. M. Zavada

7.4k citations

269 papers · 6.2k indexed · h-index 44

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 183
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials 100
Materials Chemistry top 1%
- ZnO doping and properties 104
- Silicon Nanostructures and Photoluminescence 17
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 91
- Photonic and Optical Devices 14
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 44
Mechanics of Materials
- Metal and Thin Film Mechanics 25

Co-authors: S. J. Pearton A. J. Steckl R. G. Wilson U. Hömmerich K. W. Kim D. P. Norton C. R. Abernathy H. X. Jiang
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Physical Review Letters (1 paper)Physical review. B, Condensed matter (1 paper)Applied Physics Letters (61 papers)
Partner nations: United States Russia United Kingdom

In The Last Decade

J. M. Zavada

263 papers receiving 6.0k citations

Peers

Countries citing papers authored by J. M. Zavada

Since Specialization

Citations

This map shows the geographic impact of J. M. Zavada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Zavada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Zavada more than expected).

Fields of papers citing papers by J. M. Zavada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Zavada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Zavada. The network helps show where J. M. Zavada may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. M. Zavada, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. M. Zavada Line = papers co-authored together J. M. Zavada links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Photoluminescence quantum efficiency of Er optical centers in GaN epilayers Scientific Reports ·Vinh X. Ho,T. V. Dao,H. X. Jiang,J. Y. Lin,J. M. Zavada,Stephen McGill,N. Q. Vinh	2017	6
2	Wide Bandgap Nitride Devices J. M. Zavada	2016	0
3	Refractive index of erbium doped GaN thin films Applied Physics Letters ·Sa’ed Alajlouni,Zhenyu Sun,J. Li,J. M. Zavada,J. Y. Lin,H. X. Jiang	2014	10
4	Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides Applied Optics ·I-Wen Feng,Weiping Zhao,J. Li,J. Y. Lin,H. X. Jiang,J. M. Zavada	2013	17
5	Strain relaxation in In_xGa_1‐xN/GaN quantum well structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Ahmed M. Emar,Erkan Acar Berkman,J. M. Zavada,N. A. El-Masry,S. M. Bedair	2011	8
6	Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers Applied Physics Letters ·I-Wen Feng,J. Li,A. Sedhain,J. Y. Lin,H. X. Jiang,J. M. Zavada	2010	22
7	Rare-earth doping of advanced materials for photonic applications : symposium held December 1-4, 2008, Boston, Massachusetts, U.S.A. Volkmar Dierolf,康文藤原,U. Hömmerich,P. Ruterana,J. M. Zavada	2009	1
8	Electrical Control of Exchange Bias Mediated by Graphene Physical Review Letters ·Yu. G. Semenov,J. M. Zavada,K. W. Kim	2008	15
9	Transition Metal Doped ZnO for Spintronics MRS Proceedings ·S. J. Pearton,D. P. Norton,M. Ivill,A. F. Hebard,Weimin Chen,I. A. Buyanova,J. M. Zavada	2007	8
10	Green luminescence and excited state thermalization in Er-doped gallium nitride Journal of the Korean Physical Society ·Jaetae Seo,Uwe Hoemmerich,A. J. Steckl,B. R. Birkhahn,J. M. Zavada	2006	2
11	Characterization of the red light emission from Eu doped GaN Conference on Lasers and Electro-Optics ·Ei Ei Nyein,U. Hömmerich,Jason Heikenfeld,Dong‐Seon Lee,A. J. Steckl,J. M. Zavada	2003	1
12	Magnetic Properties of Fe- and Mn-Implanted SiC Electrochemical and Solid-State Letters ·Nikoleta Theodoropoulou,A. F. Hebard,S. N. G. Chu,M. E. Overberg,C. R. Abernathy,S. J. Pearton,R. G. Wilson,J. M. Zavada	2001	43
13	Comparison of the Optical Properties of Er³⁺ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE) MRS Proceedings ·U. Hömmerich,Jaetae Seo,J. D. MacKenzie,C. R. Abernathy,R. Birkhahn,A. J. Steckl,J. M. Zavada	1999	1
14	Activation Characteristics of Donor and Acceptor Implants in GaN MRS Proceedings ·X. A. Cao,S. J. Pearton,R. K. Singh,R. G. Wilson,J. A. Sekhar,J.C. Zolper,Jung Han,D. J. Rieger,R. J. Shul,Hanjie Guo,Stephen J. Pennycook,J. M. Zavada	1999	1
15	Hydrogen in GaN-Experiments MRS Proceedings ·S. J. Pearton,J. W. Lee,R. G. Wilson,J. M. Zavada,M.G. Weinstein,Chunying Song,Michael Stavola	1998	2
16	Stability of hydrogen in ScAlMgO4 Solid-State Electronics ·C.D. Brandle,F. Ren,R. G. Wilson,J.W. Lee,S. J. Pearton,J. M. Zavada	1997	3
17	Er-Doping of Gan and Related Alloys MRS Proceedings ·S. J. Pearton,C. R. Abernathy,J. D. MacKenzie,Robert N. Schwartz,R. G. Wilson,J. M. Zavada,R. J. Shul	1996	7
18	Patterning of LiGaO₂ and LiAlO₂ by Wet and Dry Etching MRS Proceedings ·J. W. Lee,S. J. Pearton,C. R. Abernathy,R. G. Wilson,Baoxiang Chai,F. Ren,J. M. Zavada	1996	7
19	Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers Journal of Applied Physics ·J. M. Zavada,B.L. Weiss,I.V. Bradley,B. Theys,J. Chevallier,R. Rahbi,R. Addinall,R.C. Newman,H. A. Jenkinson	1992	4
20	Proton Bombarded Gallium Arsenide: Opto-Electronic Effects Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J. M. Zavada,H. A. Jenkinson,D. C. Larson	1986	1

About J. M. Zavada

J. M. Zavada is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 269 papers that have together received 6.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (183 papers), ZnO doping and properties (104 papers), Ga2O3 and related materials (100 papers), Semiconductor materials and devices (91 papers), Semiconductor Quantum Structures and Devices (44 papers), Metal and Thin Film Mechanics (25 papers), Silicon Nanostructures and Photoluminescence (17 papers) and Photonic and Optical Devices (14 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Electronic, Optical and Magnetic Materials (2.2k citations) and Materials Chemistry (4.3k citations). J. M. Zavada has collaborated with scholars based in United States, Russia and United Kingdom. Frequent co-authors include S. J. Pearton, A. J. Steckl, R. G. Wilson, U. Hömmerich, K. W. Kim, D. P. Norton, C. R. Abernathy, H. X. Jiang, J. Y. Lin and F. Ren. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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